IRFB3307

PD - 96901A IRFB3307 IRFS3307 IRFSL3307 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID 75V 5.0m: 6.3m: 130A GDS TO-220AB IRFB3307 GDS D2Pak IRFS3307 GDS TO-262 IRFSL3307 Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy e Avalanche Current c Repetitive Avalanche Energy g Max. 130c 91c 510 250 1.6 ± 20 11 -55 to + 175 300 10lbxin (1.1Nxm) 270 See Fig. 14, 15, 16a, 16b Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA RθJA Parameter Junction-to-Case k Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 k Junction-to-Ambient (PCB Mount) , D Pak jk 2 Typ. ––– 0.50 ––– ––– Max. 0.61 ––– 62 40 Units °C/W www.irf.com 1 11/04/04 IRFB3307/IRFS3307/IRFSL3307 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance Min. Typ. Max. Units 75 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– ––– 0.069 ––– 5.0 6.3 ––– 4.0 ––– 20 ––– 250 ––– 200 ––– -200 1.5 ––– Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mAd mΩ VGS = 10V, ID = 75A g V VDS = VGS, ID = 150µA µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units ––– 120 35 46 26 120 51 63 5150 460 250 570 700 ––– 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC Conditions VDS = 50V, ID = 75A ID = 75A VDS = 60V VGS = 10V g VDD = 48V ID = 75A RG = 3.9Ω VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V i, See Fig.11 VGS = 0V, VDS = 0V to 60V h, See Fig. 5 98 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Effective Output Capacitance (Energy Related) ––– Effective Output Capacitance (Time Related)h ––– ns pF Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– 130c ––– 510 A A Conditions MOSFET symbol showing the integral reverse G D S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V g VR = 64V, ––– 38 57 ns TJ = 25°C TJ = 125°C IF = 75A ––– 46 69 di/dt = 100A/µs g ––– 65 98 nC TJ = 25°C TJ = 125°C ––– 86 130 ––– 2.8 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.096mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. „ ISD ≤ 75A, di/dt ≤ 530A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 400µs; duty cycle ≤ 2%. † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom ‰ Rθ is measured at TJ approximately 90°C. Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRFB3307/IRFS3307/IRFSL3307 1000 TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 1000 TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 BOTTOM 10 BOTTOM 1 4.5V 10 4.5V 0.1 ≤60µs PULSE WIDTH 0.01 0.1 1 Tj = 25°C 10 1 100 1000 0.1 1 ≤60µs PULSE WIDTH Tj = 175°C 10 100 1000 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 2.5 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A 2.0 ID, Drain-to-Source Current (Α) VGS = 10V 100 T J = 175°C 10 T J = 25°C 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 2 4 6 8 10 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 4. Normalized On-Resistance vs. Temperature 12.0 ID= 75A VGS, Gate-to-Source Voltage (V) 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 60V VDS= 38V VDS= 15V C, Capacitance(pF) 10000 Ciss 1000 Coss Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0 20 40 60 80 100 120 140 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 IRFB3307/IRFS3307/IRFSL3307 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec 100µsec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 175°C 100 10msec 10 T J = 25°C 10 1 VGS = 0V 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) 0.1 1 Tc = 25°C Tj = 175°C Single Pulse DC 10 VDS, Drain-to-Source Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 140 120 ID, Drain Current (A) 100 Fig 8. Maximum Safe Operating Area Limited By Package 95 100 80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 90 85 80 75 70 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature 1.4 1.2 1.0 Energy (µJ) Fig 10. Drain-to-Source Breakdown Voltage 1200 EAS , Single Pulse Avalanche Energy (mJ) 1000 ID 8.6A 12A BOTTOM 75A TOP 800 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 600 400 200 0 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C) 4 Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent www.irf.com IRFB3307/IRFS3307/IRFSL3307 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ R1 R1 τJ τ1 τ2 R2 R2 τC τ τ2 0.01 Ri (°C/W) τi (sec) 0.2911 0.000484 0.3196 0.005529 τ1 0.001 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 0.05 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 300 EAR , Avalanche Energy (mJ) 250 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 200 150 100 50 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 IRFB3307/IRFS3307/IRFSL3307 5.0 20 VGS(th) Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 15 IRRM (A) ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 10 5 I = 30A F V = 64V R T = 25°C _____ J T = 125°C ---------J 0 100 200 300 400 500 600 700 800 900 1000 dif/dt (A/µs) T J , Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 20 Fig. 17 - Typical Recovery Current vs. dif/dt 400 350 15 300 250 IRRM (A) Qrr (nC) 10 200 150 5 I = 45A F V = 64V R T = 25°C _____ J T = 125°C ---------J 100 50 0 I = 30A F V = 64V R T = 25°C _____ J T = 125°C ---------J 0 100 200 300 400 500 600 700 800 900 1000 dif/dt (A/µs) 100 200 300 400 500 600 700 800 900 1000 dif/dt (A/µs) Fig. 18 - Typical Recovery Current vs. dif/dt 400 350 300 250 Qrr (nC) Fig. 19 - Typical Stored Charge vs. dif/dt 200 150 100 50 0 100 200 300 400 500 600 700 800 900 1000 dif/dt (A/µs) IF = 45A VR = 64V TJ = 25°C _____ TJ = 125°C ---------- 6 Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com IRFB3307/IRFS3307/IRFSL3307 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 21a. Unclamped Inductive Test Circuit LD VDS Fig 21b. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr www.irf.com Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform 7 IRFB3307/IRFS3307/IRFSL3307 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSA  à GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (à ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃ&Ã2à ((& X@@Fà ( GDI@Ã8 TO-220AB packages are not recommended for Surface Mount Application. 8 www.irf.com IRFB3307/IRFS3307/IRFSL3307 TO-262 Package Outline (Dimensions are shown in millimeters (inches)) IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR TO-262 Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSG" "G GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (à ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr ƒ‚†v‡v‚Ãvqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃ&Ã2à ((& X@@Fà ( GDI@Ã8 OR DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6SÃ&Ã2à ((& X@@Fà ( 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com 9 IRFB3307/IRFS3307/IRFSL3307 D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr ƒ‚†v‡v‚Ãvqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG OR DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ 10 www.irf.com IRFB3307/IRFS3307/IRFSL3307 D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/04 www.irf.com 11