IRFR3412

PD - 94373 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability l IRFR3412 IRFU3412 HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.025Ω ID 48A† D-Pak IRFR3412 I-Pak IRFU3412 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 second Mounting torqe, 6-32 or M3 screw Max. 48† 34† 190 140 0.95 ± 20 6.4 -55 to + 175 300(1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– 48† 190 A ––– ––– 1.3 V „ ––– 68 100 ns ––– 160 240 nC ––– 4.5 6.8 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 29A, VGS = 0V TJ = 125°C, IF = 29A di/dt = 100A/µs „ D S www.irf.com 1 1/22/02 IRFR/U3412 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 3.5 ––– ––– ––– ––– Typ. ––– 0.10 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA † 0.025 Ω VGS = 10V, ID = 29A „ 5.5 V VDS = VGS, ID = 250µA 1.0 VDS = 95V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 59 21 17 19 68 44 37 3430 270 150 1040 170 270 Max. Units Conditions ––– S VDS = 50V, ID = 29A 89 ID = 29A 32 nC VDS = 50V 26 VGS = 10V, „ ––– VDD = 50V ––– ID = 29A ns ––– RG = 6.8Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 160 29 14 Units mJ A mJ Thermal Resistance Parameter RθJC RθJA RθJA Notes: Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 1.05 50 110 Units °C/W  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 0.38mH, RG = 25Ω, IAS = 29A, (See Figure 12a) ƒ ISD ≤ 29A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, T J ≤ 150°C †Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com IRFR/U3412 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP 100 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) BOTTOM BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 1 10 0.1 4.5V 4.5V 0.01 0.1 1 20µs PULSE WIDTH T J= 25 ° C 10 100 20µs PULSE WIDTH T J= 175 ° C 1 0.1 1 10 100 V DS Drain-to-Source Voltage (V) , V DS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I D = 48A 2.5 RDS(on) , Drain-to-Source On Resistance I D, Drain-to-Source Current (A) 100 ° T J = 175 C 2.0 10 (Normalized) 1.5 T = 25 ° C J 1 1.0 0.5 V DS= 25V 20µs PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 8.0 9.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS Gate-to-Source Voltage (V) , TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U3412 100000 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED Crss = C gd Coss = Cds + Cgd 20 VGS , Gate-to-Source Voltage (V) C ds ID= 29A VDS = 80V VDS= 50V VDS= 20V 16 C, Capacitance (pF) 10000 12 Ciss 8 1000 Coss Crss 100 1 10 100 4 0 0 20 40 60 80 100 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µsec 10 10.0 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 10msec 1.0 T J = 25°C VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-toDrain Voltage (V) 0.1 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3412 50 V DS LIMITED BY PACKAGE RD VGS 40 RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD ID , Drain Current (A) 30 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 D = 0.50 Thermal Response 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 t1/ t 2 +T C 0.1 P DM t1 t2 J = P DM x Z thJC 0.01 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3412 300 15V ID TOP 250 12A 21A 29A EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 200 BOTTOM RG VGS 20V D.U.T IAS tp + V - DD A 150 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 50 0 25 50 75 100 125 150 175 Starting T , Junction Temperature J ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U3412 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3412 TO-252AA (D-Pak) Package Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 1.27 (.050) 0.88 (.035) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 0.58 (.023) 0.46 (.018) 2.28 (.090) TO-252AA (D-Pak) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRF U120 12 916A 34 AS SEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A 8 www.irf.com IRFR/U3412 TO-251AA (I-Pak) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 1.52 (.060) 1.15 (.045) 1 -B2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 6.22 (.245) 5.97 (.235) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3X 1.14 (.045) 0.76 (.030) 3X 0.89 (.035) 0.64 (.025) M AMB 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 2.28 (.090) 2X 0.25 (.010) TO-251AA (I-Pak) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN THE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRF U120 919A 78 56 DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A AS SEMBLY LOT CODE www.irf.com 9 IRFR/U3412 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/02 10 www.irf.com