IRFR3518PBF

PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW ID 30A D-Pak IRFR3518 I-Pak IRFU3518 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 80 ± 20 38 27 150 110 0.71 5.2 -55 to + 175 300 (1.6mm from case ) Units V A W W/°C V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)† Junction-to-Ambient Typ. ––– ––– ––– Max. 1.4 40 110 Units °C/W Notes  through † are on page 10 www.irf.com 1 12/03/04 IRFR/U3518PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 80 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.09 24 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA † 29 mΩ VGS = 10V, ID = 18A „ 4.0 V VDS = VGS, ID = 250µA 20 VDS = 80V, VGS = 0V µA 250 VDS = 64V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 34 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 37 11 12 12 25 37 13 1710 270 33 1780 170 330 Max. Units Conditions ––– S VDS = 25V, ID = 18A 56 ID = 18A ––– nC VDS = 40V ––– VGS = 10V „ ––– VDD = 40V ––– ID = 18A ns ––– RG = 9.1Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 64V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 160 18 11 Units mJ A mJ Diode Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 38 ––– ––– showing the A G integral reverse ––– ––– 150 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ ––– 77 ––– ns TJ = 25°C, IF = 18A ––– 210 ––– nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U3518PbF 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP 100 I D, Drain-to-Source Current (A) BOTTOM 100 I D, Drain-to-Source Current (A) BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 10 4.5V 1 4.5V 0.1 1 20µs PULSE WIDTH T J= 25 ° C 0.01 0.1 1 10 100 20µs PULSE WIDTH T J= 175 ° C 0.1 0.1 1 10 100 V DS Drain-to-Source Voltage (V) , V DS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 3.0 I D = 38A ID, Drain-to-Source Current (Α) 2.5 100.00 RDS(on) , Drain-to-Source On Resistance T J = 25°C T J = 175°C 2.0 (Normalized) 1.5 10.00 1.0 VDS = 25V 20µs PULSE WIDTH 1.00 4.0 6.0 8.0 10.0 12.0 14.0 16.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) Tj, Junction Temperature (°° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U3518PbF 100000 VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds Crss = C gd Coss = C + C ds gd 12 VGS, Gate-to-Source Voltage (V) ID= 18A VDS= 40V VDS= 64V VDS= 16V 10 8 6 4 2 0 10000 C, Capacitance(pF) C iss 1000 C oss 100 C rss 10 1 10 100 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175 ° C 10 ID, Drain-to-Source Current (A) 100 I SD , Reverse Drain Current (A) 10 100µsec 1msec T J= 25 ° C 1 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 10msec V GS = 0 V 0.1 0.0 0.5 1.0 1.5 2.0 V SD ,Source-to-Drain Voltage (V) 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3518PbF 40 V DS LIMITED BY PACKAGE RD VGS 30 RG VGS D.U.T. + -VDD I D , Drain Current (A) 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 D = 0.50 Thermal Response 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 P DM J = P DM x Z thJC +T C 1 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3518PbF 15V 320 TOP RG 20V D.U.T IAS tp + V - DD A EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 240 BOTTOM ID 7.3A 13A 18A 160 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 80 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 12V .2µF 50KΩ .3µF QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U3518PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3518PbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECT IFIER LOGO IRFU120 12 916A 34 AS SEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNATIONAL RECT IFIER LOGO IRFU120 12 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE AS SEMBLY LOT CODE 8 www.irf.com IRFR/U3518PbF I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) ) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 919A 56 78 AS SEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFU120 56 78 AS S EMBLY LOT CODE DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMBLY S ITE CODE www.irf.com 9 IRFR/U3518PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION N OTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.99mH R G = 25Ω, IAS = 18A. ƒ ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same † When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. charging time as Coss while VDS is rising from 0 to 80% VDSS. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 10 www.irf.com