IRFR3706CPBF

PD - 96065 SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free l IRFR3706CPbF IRFU3706CPbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 9.0mΩ ID 75A„ Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current D-Pak IRFR3706CPbF I-Pak IRFU3706CPbF Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 12 75 „ 53 „ 280 88 44 0.59 -55 to + 175 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case… Junction-to-Ambient (PCB mount)*… Junction-to-Ambient… Typ. ––– ––– ––– Max. 1.7 50 110 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through … are on page 10 www.irf.com 1 06/02/06 IRFR/U3706CPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.021 6.9 8.1 11.5 ––– ––– ––– ––– ––– Max. Units ––– V ––– V/°C 9.0 11 m Ω 23 2.0 V 20 µA 100 200 nA -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, I D = 1mA VGS = 10V, ID = 15A ƒ VGS = 4.5V, ID = 12A ƒ VGS = 2.8V, ID = 7.5A ƒ VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 23 8.0 5.5 16 1.8 6.8 87 17 4.8 2410 1070 140 Max. Units Conditions ––– S VDS = 16V, ID = 57A 35 ID = 28A 12 nC VDS = 10V 8.3 VGS = 4.5V ƒ 24 VGS = 0V, VDS = 10V ––– Ω ––– VDD = 10V ns ––– ID = 28A ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– pF VDS = 10V ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 220 28 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.88 0.82 45 65 49 78 75 „ 280 1.3 ––– 68 98 74 120 V ns nC ns nC A VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 36A, VGS = 0V ƒ TJ = 125°C, I S = 36A, VGS = 0V ƒ TJ = 25°C, I F = 36A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 36A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRFR/U3706CPbF 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 100 2.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 2.5V 10 0.1 10 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 71A I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C 100 1.5 1.0 0.5 10 2.5 V DS = 15V 20µs PULSE WIDTH 3.5 4.5 5.5 6.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U3706CPbF 100000 10 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 28A VDS = 16V VDS = 10V 8 10000 C, Capacitance(pF) Ciss 1000 6 Coss 4 100 Crss 2 10 1 10 100 0 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us TJ = 175 ° C 10 I D , Drain Current (A) 100 100 100us 1ms 10 10ms TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 1 1 TC = 25 ° C TJ = 175° C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3706CPbF 80 LIMITED BY PACKAGE V DS VGS RD ID , Drain Current (A) 60 RG 4.5V D.U.T. + -VDD 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3706CPbF 15V EAS , Single Pulse Avalanche Energy (mJ) 500 TOP 400 VDS L DRIVER BOTTOM ID 12A 24A 28A RG 20V D.U.T IAS tp + V - DD 300 A 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit 100 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 4.5 V QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U3706CPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3706CPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAS ! XDUCÃ6TT@H7G` GPUÃ8P9@à !"# %Ã! Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9ÃPIÃXXà DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å ,5)5 $   96U@Ã8P9@ `@6Sà X@@Fà GDI@Ã6 Ã2Ã! % I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ ÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚Ãvqvph‡r†Ã ÅGrhqA…rrÅĈhyvsvph‡v‚Ã‡‚ÇurÃ8‚†ˆ€r…yr‰ry 6TT@H7G` GPUÃ8P9@ 25 DIU@SI6UDPI6G S@8UDAD@S GPBP Q6SUÃIVH7@S ,5)5   96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃRV6GDAD@9ÃUPà 8PITVH@SÃG@W@GÃPQUDPI6G `@6Sà X@@Fà Ã2Ã! % 6TT@H7G` GPUÃ8P9@ 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ 8 www.irf.com IRFR/U3706CPbF Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Package Outline I-Pak (TO-251AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAV ! XDUCÃ6TT@H7G` GPUÃ8P9@Ã$%&' 6TT@H7G@9ÃPIÃXXà (Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)8 $   96U@Ã8P9@ `@6Sà Ã2Ã! X@@Fà ( GDI@Ã6 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)8   96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6Sà Ã2Ã! X@@Fà ( 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com 9 IRFR/U3706CPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1 . CONTROLLING DIMENSION : MILLIMETER. 2 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3 . OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. ‚ Starting TJ = 25°C, L = 0.54mH RG = 25Ω, IAS = 28A. … Rθ is measured at TJ approximately 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/2006 10 www.irf.com