IRFR3710ZPBF

PD - 95513A AUTOMOTIVE MOSFET IRFR3710ZPbF IRFU3710ZPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V G S RDS(on) = 18mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR3710Z I-Pak IRFU3710Z Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM Max. 56 39 42 220 140 Units A ™ PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) W W/°C V mJ A mJ d 0.95 ± 20 IAR EAR TJ TSTG Avalanche Current Ù h 150 200 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient y y Typ. Max. 1.05 40 110 Units °C/W i ––– ––– ––– HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 12/03/04 IRFR/U3710ZPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 100 ––– ––– 2.0 39 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.088 15 ––– ––– ––– ––– ––– ––– 69 15 25 14 43 53 42 4.5 7.5 2930 290 180 1200 180 430 ––– ––– 18 4.0 ––– 20 250 200 -200 100 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– pF ns nC nA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 33A e V S µA VDS = VGS, ID = 250µA VDS = 25V, ID = 33A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 33A VDS = 80V VGS = 10V VDD = 50V ID = 33A RG = 6.8 Ω VGS = 10V e e D G S Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 35 41 56 A 220 1.3 53 62 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 33A, VGS = 0V TJ = 25°C, IF = 33A, VDD = 50V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U3710ZPbF 1000 TOP VGS 15V 10V 6.0V 5.0V 4.8V 4.5V 4.3V 4.0V 1000 TOP VGS 15V 10V 6.0V 5.0V 4.8V 4.5V 4.3V 4.0V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 4.0V 10 10 4.0V 60µs PULSE WIDTH Tj = 25°C 0.1 1 10 100 1 60µs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 100 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (Α) T J = 175°C 100 80 T J = 25°C 60 T J = 175°C 40 10 TJ = 25°C VDS = 25V 60µs PULSE WIDTH 20 V DS = 10V 0 0 10 20 30 40 50 60 70 80 1.0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate-to-Source Voltage (V) ID,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRFR/U3710ZPbF 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 12.0 ID= 33A VGS, Gate-to-Source Voltage (V) 10.0 10000 C, Capacitance(pF) VDS= 80V VDS= 50V VDS= 20V Ciss 1000 8.0 6.0 Coss Crss 100 4.0 2.0 10 1 10 100 0.0 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10.00 10 100µsec 1.00 T J = 25°C 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 10msec VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3710ZPbF 60 50 ID, Drain Current (A) 3.0 Limited By Package RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 56A VGS = 10V 2.5 40 30 2.0 1.5 20 10 1.0 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 τ1 τ2 Ri (°C/W) τi (sec) 0.576 0.000540 0.249 0.001424 0.224 0.007998 Ci= τi /Ri Ci= i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.0001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3710ZPbF 700 EAS , Single Pulse Avalanche Energy (mJ) 15V 600 500 400 300 200 100 0 25 50 75 100 VDS L DRIVER ID 3.4A 4.8A BOTTOM 33A TOP RG 20V VGS D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) 4.0 3.0 Charge Fig 13a. Basic Gate Charge Waveform ID = 250µA 2.0 L DUT 0 VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 1K T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRFR/U3710ZPbF 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 200 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 33A 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7 IRFR/U3710ZPbF Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRFR/U3710ZPbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-F ree" PART NUMBER INTERNAT IONAL RECT IF IER LOGO IRFU120 12 916A 34 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECTIF IER LOGO IRFU120 12 34 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY S ITE CODE AS SEMBLY LOT CODE www.irf.com 9 IRFR/U3710ZPbF I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) ) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in assembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 78 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 56 78 ASS EMBLY LOT CODE DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMBL Y S ITE CODE 10 www.irf.com IRFR/U3710ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION N OTES : 1 . CONTROLLING DIMENSION : MILLIMETER. 2 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3 . OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 0.28mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25Ω, IAS = 33A, VGS =10V. Part not avalanche performance. recommended for use above this value. † This value determined from sample failure population. 100% ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994.  Repetitive rating; pulse width limited by Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. Notes: IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 www.irf.com 11