IRFR3711PBF

PD- 95073A SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l 100% RG Tested l Lead-Free l IRFR3711PbF IRFU3711PbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.5mΩ ID 110A„ Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3711 I-Pak IRFU3711 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max 20 ± 20 100 69 440 2.5 120 0.96 -55 to +150 Units V c f f A W W/°C °C Maximum Power Dissipation Maximum Power Dissipation g Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance Symbol RθJC RθJA RθJA Parameter J unction-to-Case h Typ Max 1.04 50 110 Units °C/W J unction-to-Ambient (PCB Mount) J unction-to-Ambient h gh ––– ––– ––– Notes  through † are on page 10 www.irf.com 1 1/7/05 IRFR/U3711PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min 20 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– Typ ––– 0.022 5.2 6.7 ––– ––– ––– ––– ––– ––– Max Units ––– ––– 6.5 8.5 3.0 140 20 100 200 -200 nA µA V Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VDS = 20V, VGS = 0V VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V V/°C Reference to 25°C, ID = 1mA mΩ V e e VDS = VGS, ID = 250µA IGSS Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min 53 ––– ––– ––– ––– 0.3 ––– ––– ––– ––– ––– ––– ––– Typ ––– 29 7.3 8.9 33 ––– 12 220 17 12 2980 1770 280 Max Units ––– 44 ––– ––– ––– 2.5 ––– ––– ––– ––– ––– ––– ––– pF ns Ω VDD = 10V ID = 30A RG = 1.8Ω VGS = 4.5V VGS = 0V VDS = 10V nC S ID = 15A VDS = 10V Conditions VDS = 16V, ID = 30A VGS = 4.5V VGS = 0V, VDS = 10V e e ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Min ––– ––– ––– ––– ––– ––– ––– ––– Typ ––– ––– Max 460 30 Units mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Typ ––– ––– 0.88 0.82 50 61 48 65 Max Units 110 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V TJ = 125°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 16A, VR = 10V di/dt = 100A/µs f A Ù 440 1.3 ––– 75 92 72 98 V ns nC ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge e e e e TJ = 125°C, IF = 16A, VR = 10V di/dt = 100A/µs 2 www.irf.com IRFR/U3711PbF 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 100 2.7V 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 10 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 ° C TJ = 150 ° C 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 110A I D , Drain-to-Source Current (A) 1.5 1.0 0.5 10 2.0 V DS = 25V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U3711PbF 100000 10 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 30A VDS = 16V VDS = 10V 8 C, Capacitance(pF) 10000 Ciss Coss 1000 6 4 Crss 2 100 1 10 100 VDS , Drain-to-Source Voltage (V) 0 0 10 20 30 40 50 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 150 ° C ID, Drain-to-Source Current (A) 1000 10 100 100µsec 1msec TJ = 25 ° C 1 10 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 100 10msec 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 VSD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3711PbF 120 LIMITED BY PACKAGE 100 V DS VGS RG RD D.U.T. + ID , Drain Current (A) 80 -VDD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 90% 20 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3711PbF 15V EAS , Single Pulse Avalanche Energy (mJ) 1400 TOP BOTTOM 1200 1000 800 600 400 200 0 25 50 75 100 125 VDS L DRIVER ID 13A 19A 30A RG 20V D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U3711PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3711PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in as s embly line position indicates "Lead-F ree" PART NUMBER INT ERNATIONAL RECTIF IER LOGO IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNAT IONAL RECTIFIER LOGO IRFU120 12 34 DAT E CODE P = DESIGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY SIT E CODE AS S EMBLY LOT CODE 8 www.irf.com IRFR/U3711PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 919A 56 78 ASSEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 56 78 AS SEMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE www.irf.com 9 IRFR/U3711PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 1.0mH RG = 25Ω, IAS = 30A. … When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 † Rθ is measured at TJ approximately at 90°C ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 1/05 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/