IRFR48ZPBF

PD - 95950 AUTOMOTIVE MOSFET IRFR48ZPbF IRFU48ZPbF HEXFET® Power MOSFET D Features l l l l l l Description Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 11mΩ G S Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 42A D-Pak IRFR48Z Max. 62 44 42 250 91 0.61 ± 20 I-Pak IRFU48Z Units A Absolute Maximum Ratings Parameter I D @ T C = 2 5°C Continuous Drain Current, V GS @ 1 0V (Silicon Limited) I D @ T C = 1 00°C Continuous Drain Current, V GS @ 1 0V I D @ T C = 2 5°C I DM Continuous Drain Current, V GS @ 1 0V (Package Limited) Pulsed Drain Current ™ P D @ T C = 2 5°C Power Dissipation V GS Linear Derating Factor Gate-to-Source Voltage W W/°C V mJ A mJ E AS (Thermally limited) S ingle Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value E AS (Tested ) I AR E AR TJ T STG Avalanche Current d Ù h 74 110 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy O perating Junction and Storage Temperature Range g °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance R θJC R θJA R θJA J unction-to-Case y y j Parameter Typ. Max. 1.64 40 110 Units °C/W J unction-to-Ambient (PCB mount) J unction-to-Ambient HEXFET® is a registered trademark of International Rectifier. j ij ––– ––– ––– www.irf.com 1 12/20/04 IRFR/U48ZPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 55 ––– ––– 2.0 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.054 8.86 ––– ––– ––– ––– ––– ––– 40 11 15 15 61 40 35 4.5 7.5 1720 290 160 1000 230 360 ––– ––– 11 4.0 ––– 20 250 200 -200 60 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– pF ns nC nA V mΩ V S µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 37A VDS = 25V, ID = 37A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 37A VDS = 44V VGS = 10V VDD = 28V ID = 37A RG = 12 Ω VGS = 10V V/°C Reference to 25°C, ID = 1mA VDS = VGS, ID = 50µA e e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz G D S VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 20 14 37 A 250 1.3 40 28 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 37A, VGS = 0V TJ = 25°C, IF = 37A, VDD = 28V di/dt = 100A/µs Ù e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U48ZPbF 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 4.5V 10 10 4.5V ≤60µs PULSE WIDTH 1 0.1 1 Tj = 25°C ≤60µs PULSE WIDTH 1 Tj = 175°C 0.1 1 10 100 10 100 V DS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 60 Gfs , Forward Transconductance (S) ID, Drain-to-Source Current (Α) 50 40 30 20 10 0 0 20 100 T J = 175°C 10 TJ = 25°C TJ = 175°C 1 T J = 25°C VDS = 25V ≤60µs PULSE WIDTH 2 4 6 8 10 12 VDS = 10V 380µs PULSE WIDTH 40 60 80 0.1 VGS, Gate-to-Source Voltage (V) ID,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRFR/U48ZPbF 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 VGS, Gate-to-Source Voltage (V) ID= 37A VDS = 44V VDS= 28V VDS= 11V 16 C, Capacitance(pF) Ciss 1000 12 Coss Crss 8 4 0 100 1 10 100 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) 100.00 TJ = 175°C 10.00 100 100µsec 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 VDS , Drain-toSource Voltage (V) 100 10msec 1.00 TJ = 25°C VGS = 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD , Source-to-Drain Voltage (V) DC 0.10 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U48ZPbF 70 LIMITED BY PACKAGE 60 ID , Drain Current (A) 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 37A VGS = 10V 2.0 50 40 30 20 10 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) 0.7206 0.6009 0.3175 τi (sec) 0.000326 0.001810 0.014886 τ1 τ2 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci τi/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U48ZPbF EAS, Single Pulse Avalanche Energy (mJ) 15V 300 250 VDS L DRIVER ID 4.3A 6.3A BOTTOM 37A TOP 200 RG VGS 20V D.U.T IAS tp + V - DD A 150 0.01Ω 100 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 50 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS QGD VGS(th) Gate threshold Voltage (V) 5.0 VG 4.5 4.0 Charge 3.5 Fig 13a. Basic Gate Charge Waveform 3.0 2.5 2.0 L 0 ID ID ID ID ID = 1.0A = 50µA = 150µA = 250µA = 1.0mA DUT 1K VCC 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRFR/U48ZPbF 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 80 EAR , Avalanche Energy (mJ) 60 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 37A 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7 IRFR/U48ZPbF Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD VDS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRFR/U48ZPbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFU120 12 916A 34 DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFU120 12 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE www.irf.com 9 IRFR/U48ZPbF I-Pak (TO-251AA) Package Outline I-Pak (TO-251AA) Part Marking Information E XAMPL E : T H IS IS AN IRF U 120 WIT H AS S E MB L Y L OT CODE 5678 AS S E MB L E D ON WW 19, 1999 IN T H E AS S E MB L Y L INE "A" Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R IR F U 120 919A 56 78 DAT E CODE YE AR 9 = 1999 WE E K 19 L INE A OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R IRF U120 56 78 DAT E CODE P = DE S IGNAT E S L E AD-F R E E PR ODU CT (OPT IONAL ) YE AR 9 = 1999 WE E K 19 A = AS S E MB L Y S IT E CODE 10 www.irf.com IRFR/U48ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 0.11mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25Ω, IAS = 37A, VGS =10V. Part not avalanche performance. recommended for use above this value. † This value determined from sample failure population. 100% ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 ˆ Rθ is measured at TJ approximately 90°C  Repetitive rating; pulse width limited by Data and specifications subject to change without notice. This product has been designed for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. Notes: IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 www.irf.com 11