IRFR6215PBF

PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount (IRFR6215) l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = -150V RDS(on) = 0.295Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-PAK T O-252AA I-PAK TO-251AA Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current† Repetitive Avalanche Energy† Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient Typ. ––– ––– ––– Max. 1.4 50 110 Units °C/W www.irf.com 1 12/14/04 IRFR/U6215PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. -150 ––– ––– ––– -2.0 3.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 36 53 37 4.5 7.5 860 220 130 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, I D = -1mA 0.295 VGS = -10V, ID = -6.6A „ Ω 0.58 VGS = -10V, ID = -6.6A „ TJ = 150°C -4.0 V VDS = V GS, ID = -250µA ––– S VDS = -50V, ID = -6.6A† -25 VDS = -150V, VGS = 0V µA -250 VDS = -120V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 66 ID = -6.6A 8.1 nC VDS = -120V 35 VGS = -10V, See Fig. 6 and 13 „† ––– VDD = -75V ––– ID = -6.6A ns ––– RG = 6.8Ω ––– RD = 12Ω, See Fig. 10 „† D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact… S ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5† Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol -13 ––– ––– showing the A G integral reverse ––– ––– -44 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V „ ––– 160 240 ns TJ = 25°C, IF = -6.6A ––– 1.2 1.7 µC di/dt = 100A/µs „† Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = -6.6A. (See Figure 12) TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2% … This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ƒ ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, † Uses IRF6215 data and test conditions ** When mounted on 1" square PCB (FR-4 or G-10 Material ) For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com IRFR/U6215PbF 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 100 -ID , Drain-to-Source Current (A) 10 -ID , Drain-to-Source Current (A) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4.5V 20µs PULSE WIDTH TC = 175°C 1 10 -4.5V 1 1 10 20µs PULSE WIDTH Tc = 25°C A 100 1 A 100 -V , Drain-to-Source Voltage (V) DS -V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) 100 2.5 I D = -11A -ID , Drain-to-Source Current (A) 2.0 TJ = 25°C TJ = 175°C 10 1.5 1.0 0.5 1 4 5 6 7 VDS = -50V 20µs PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = -10V 80 100 120 140 160 180 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U6215PbF 2000 1600 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = -6.6A 16 VDS = -120V VDS = -75V VDS = -30V C, Capacitance (pF) Ciss 1200 12 Coss 800 8 Crss 400 4 0 1 10 100 A 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10µs 10 TJ = 175°C TJ = 25°C -I D , Drain Current (A) 10 100µs 1 1ms 0.1 0.2 0.6 1.0 1.4 VGS = 0V A 1 1 TC = 25°C TJ = 175°C Single Pulse 10 100 10ms A 1000 1.8 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U6215PbF 14 12 VDS VGS RG RD D.U.T. + -ID , Drain Current (A) 10 8 6 4 2 VGS -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0 25 50 75 100 125 150 175 10% TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (ZthJC ) 1 D = 0.50 0.20 0.10 0.05 P DM 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t /t t 1 t2 1 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - VDD A 1 5 IRFR/U6215PbF VDS EAS , Single Pulse Avalanche Energy (mJ) L 800 TOP BOTTOM 600 RG D.U.T IAS VDD A DRIVER ID -2.7A -4.7A -6.6A -20V tp 0.01Ω 400 15V 200 Fig 12a. Unclamped Inductive Test Circuit I AS 0 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + QGS QGD D.U.T. - -10V .3µF VDS IRFR/U6215PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFR/U6215PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in assembly line pos ition indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WE EK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRF U120 12 34 DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE AS S EMBLY LOT CODE 8 www.irf.com IRFR/U6215PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS SEMB LED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" INT ERNAT IONAL RECT IF IER LOGO PART NUMBER IRF U120 919A 56 78 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER IRF U 120 56 78 AS S EMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMB LY S IT E CODE www.irf.com 9 IRFR/U6215PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/