IRFS4229PBF

PD - 97080 PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low Q G for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability IRFS4229PbF Key Parameters 250 300 42 91 175 D VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max D V V m: A °C G G S D S D2Pak D S G Gate Drain Source Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Parameter VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.1N m) Max. ±30 45 32 180 91 330 190 2.2 -40 to + 175 300 Units V A c Repetitive Peak Current g W W/°C °C x x N Thermal Resistance RθJC RθJA Junction-to-Case Junction-to-Ambient f Parameter f Typ. ––– ––– Max. 0.45* 62 Units * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Notes  through … are on page 9 www.irf.com 1 04/12/06 IRFS4229PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse Min. 250 ––– ––– 3.0 ––– ––– ––– ––– ––– 83 ––– ––– 100 ––– ––– Typ. Max. Units ––– 210 42 ––– -14 ––– ––– ––– ––– ––– 72 26 ––– 790 1390 4560 390 100 290 4.5 7.5 ––– ––– 48 5.0 ––– 20 1.0 100 -100 ––– 110 ––– ––– ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns µJ S nC V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 26A e V mV/°C µA mA nA VDS = VGS, ID = 250µA VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 25V, ID = 26A VDD = 125V, ID = 26A, VGS = 10V e VDD = 200V, VGS = 15V, RG= 4.7Ω L = 220nH, C= 0.3µF, VGS = 15V VDS = 200V, RG= 4.7Ω, TJ = 25°C L = 220nH, C= 0.3µF, VGS = 15V VDS = 200V, RG= 4.7Ω, TJ = 100°C VGS = 0V VDS = 25V ƒ = 1.0MHz, VGS = 0V, VDS = 0V to 200V Between lead, and center of die contact G S D Ciss Coss Crss Coss eff. LD LS Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance ––– ––– ––– ––– ––– ––– Avalanche Characteristics EAS EAR VDS(Avalanche) IAS d Repetitive Avalanche Energy ™ Repetitive Avalanche VoltageÙ Avalanche CurrentÃd Single Pulse Avalanche Energy Parameter Typ. Max. Units mJ mJ V A ––– ––– 300 ––– 130 33 ––– 26 Diode Characteristics Parameter IS @ TC = 25°C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode) Min. ––– ––– ––– ––– ––– Typ. Max. Units ––– ––– ––– 190 840 45 180 1.3 290 1260 V ns nC A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 26A, VGS = 0V di/dt = 100A/µs Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge e TJ = 25°C, IF = 26A, VDD = 50V e 2 www.irf.com IRFS4229PbF 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V TOP 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.5V 10 10 5.5V 1 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 1 10 100 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 Fig 2. Typical Output Characteristics 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(Α) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 100 ID = 26A VGS = 10V TJ = 175°C 10 1 TJ = 25°C 0.1 VDS = 25V ≤ 60µs PULSE WIDTH 0.01 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 1400 1600 Energy per pulse (µJ) Energy per pulse (µJ) 1200 L = 220nH C = 0.3µF 100°C 25°C 1200 1000 800 600 400 200 L = 220nH C = Variable 100°C 25°C 800 400 0 150 160 170 180 190 200 0 100 110 120 130 140 150 160 170 VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A) Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current www.irf.com 3 IRFS4229PbF 2000 1000 L = 220nH 1600 ISD , Reverse Drain Current (A) Energy per pulse (µJ) C= 0.3µF C= 0.2µF C= 0.1µF 100 1200 TJ = 175°C 10 800 400 1 TJ = 25°C VGS = 0V 0 25 50 75 100 125 150 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Temperature (°C) VSD, Source-to-Drain Voltage (V) Fig 7. Typical EPULSE vs.Temperature 7000 6000 5000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 8. Typical Source-Drain Diode Forward Voltage 20 VGS, Gate-to-Source Voltage (V) ID= 26A VDS = 160V VDS = 100V VDS = 40V 16 C, Capacitance (pF) Ciss 4000 3000 2000 1000 12 8 Coss 4 Crss 0 1 10 100 1000 0 0 20 40 60 80 100 120 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage 50 1000 40 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 1µsec 100µsec 10µsec ID, Drain Current (A) 100 30 10 20 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 100 1000 0 25 50 75 100 125 150 175 TJ , Junction Temperature (°C) VDS , Drain-to-Source Voltage (V) Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area 4 www.irf.com IRFS4229PbF ( RDS (on), Drain-to -Source On Resistance Ω) EAS, Single Pulse Avalanche Energy (mJ) 0.40 600 ID = 26A 0.30 500 ID 7.4A 13A BOTTOM 26A TOP 400 0.20 300 0.10 TJ = 125°C TJ = 25°C 200 100 0.00 5 6 7 8 9 10 0 25 50 75 100 125 150 175 VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C) Fig 13. On-Resistance Vs. Gate Voltage 5.0 Fig 14. Maximum Avalanche Energy Vs. Temperature 140 120 VGS(th) Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 Repetitive Peak Current (A) ton= 1µs Duty cycle = 0.25 Half Sine Wave Square Pulse ID = 250µA 100 80 60 40 20 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Case Temperature (°C) Fig 15. Threshold Voltage vs. Temperature 1 Fig 16. Typical Repetitive peak Current vs. Case temperature Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τC τ1 τ2 τ3 τ3 τ Ri (°C/W) τι (sec) 0.01 0.02 0.01 Ci= τi/Ri Ci= τ i/Ri 0.080717 0.000052 0.209555 0.001021 0.159883 0.007276 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFS4229PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG * • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD ** + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs L VCC 0 DUT 1K Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform 6 www.irf.com IRFS4229PbF A PULSE A RG DRIVER L C PULSE B VCC B Ipulse RG DUT tST Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms Fig 21c. EPULSE Test Waveforms www.irf.com 7 IRFS4229PbF D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr ƒ‚†v‡v‚Ãvqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG OR DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ 8 www.irf.com IRFS4229PbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 26A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Rθ is measured at TJ of approximately 90°C. … Half sine wave with duty cycle = 0.25, ton=1µsec. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/2006 www.irf.com 9