IRFS52N15DPBF

PROVISIONAL PD - 97002 SMPS MOSFET HEXFET® Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF Key Parameters VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 150 200 32 175 V V m: °C Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB IRFB52N15DPbF D2Pak TO-262 IRFS52N15DPbF IRFSL52N15DPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V ‡ Continuous Drain Current, VGS @ 10V ‡ Pulsed Drain Current  Power Dissipation ‡ Power Dissipation ‡ Linear Derating Factor ‡ Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 51* 36* 240 3.8 230* 1.5* ± 30 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Typ. ––– 0.50 ––– ––– Max. 0.47* ––– 62 40 Units °C/W * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Notes  through ‡ are on page 11 www.irf.com 1 05/17/05 PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.16 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 32 mΩ VGS = 10V, ID = 36A „ 5.0 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 19 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 60 18 28 16 47 28 25 2770 590 110 3940 260 550 Max. Units Conditions ––– S VDS = 50V, ID = 36A 89 ID = 36A 27 nC VDS = 75V 42 VGS = 10V, „ ––– VDD = 75V ––– ID = 36A ns ––– R G = 2.5Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 120V … Avalanche Characteristics Parameter EAS IAR EAR VDS (Avalanche) Single Pulse Avalanche Energy Avalanche Current ™ Repetitive Avalanche Voltage ™ Repetitive Avalanche Energy Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Ù dh Min. ––– ––– ––– 200 Min. Typ. Max. Units Typ. ––– ––– 450 ––– Max. 470 36 ––– ––– Units mJ A mJ V Diode Characteristics IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 60 ––– ––– showing the A G integral reverse ––– ––– 240 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V „ ––– 140 210 nS TJ = 25°C, IF = 36A ––– 780 1170 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 1000 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 10 10 5.0V 1 5.0V 300µs PULSE WIDTH Tj = 25°C 1 0.1 0.1 1 300µs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 3.0 I D = 60A ID, Drain-to-Source Current (Α ) 2.5 100.00 RDS(on) , Drain-to-Source On Resistance (Normalized) T J = 175°C 2.0 1.5 10.00 T J = 25°C 1.0 1.00 5.0 7.0 9.0 VDS = 15V 300µs PULSE WIDTH 11.0 13.0 15.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 100000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 12 10 8 6 4 2 0 ID = 36A VDS = 120V VDS = 75V 10000 C, Capacitance(pF) Ciss 1000 Coss 100 Crss 10 1 10 100 1000 0 10 20 30 40 50 60 70 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 T J = 175°C ID , Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µsec 10 1msec 10.00 T J = 25°C 1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V) 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 100 10msec 0.1 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 70 V DS 60 RD VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + 50 -VDD I D , Drain Current (A) 40 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC ) D = 0.50 0.1 0.20 0.10 Thermal Response 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1 / t 2 +TC 1 J = P DM x Z thJC 0.001 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF 15V 900 TOP VDS L DRIVER 720 BOTTOM ID 15A 26A 36A RG 20V D.U.T IAS tp + V - DD EAS , Single Pulse Avalanche Energy (mJ) 540 A 0.01Ω 360 Fig 12a. Unclamped Inductive Test Circuit 180 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( ° C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 10 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSA  à GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (à ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å I‚‡r)ÃÅQÅÃvh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqÃÃA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃ&Ã2à ((& X@@Fà ( GDI@Ã8 8 www.irf.com PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ A$"T Q6SUÃIVH7@S 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com 9 PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE TO-262 Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSG" "G GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (à ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃ&Ã2à ((& X@@Fà ( GDI@Ã8 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6SÃ&Ã2à ((& X@@Fà ( 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ 10 www.irf.com PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. Notes: NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4  1% Duty cycle, 100 pulses, limited by … Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. as Coss while VDS is rising from 0 to 80% VDSS. ‚ Starting TJ = 25°C, L = 0.72mH † This is only applied to TO-220AB package. RG = 25Ω, IAS = 36A. ‡ This is applied to D2Pak, when mounted on 1" square PCB ƒ ISD ≤ 36A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, (FR-4 or G-10 Material ). For recommended footprint and soldering TJ ≤ 175°C. techniques refer to application note #AN-994. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. TO-220 package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] (IRFB52N15DPbF), & Industrial (IRFS52N15DPbF/IRFSL52N15DPbF) market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/05 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/