IRFS59N10DPBF

PD - 95378 SMPS MOSFET Applications l High frequency DC-DC converters l UPS / Motor Control Inverters l Lead-Free IRFB59N10DPbF IRFS59N10DPbF IRFSL59N10DPbF HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.025Ω ID 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB59N10D and Current D2Pak IRFS59N10D TO-262 IRFSL59N10D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 59 42 236 3.8 200 1.3 ± 30 3.3 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l l Half-bridge and Full-bridge DC-DC Converters Full-bridge Inverters Notes  through ‡ are on page 11 www.irf.com 1 06/07/04 IRFB/IRFS/IRFSL59N10DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.025 Ω VGS = 10V, ID = 35.4A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 76 24 36 16 90 20 12 2450 740 190 3370 390 690 Max. Units Conditions ––– S VDS = 50V, ID = 35.4A 114 ID = 35.4A 36 nC VDS = 80V 54 VGS = 10V, „ ––– VDD = 50V ––– ID = 35.4A ns ––– RG = 2.5Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz† ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 510 35.4 20 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.50 ––– ––– Max. 0.75 ––– 62 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 59 ––– ––– showing the A G integral reverse ––– ––– 236 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 35.4A, VGS = 0V „ ––– 130 200 ns TJ = 25°C, IF = 35.4A ––– 0.75 1.1 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFB/IRFS/IRFSL59N10DPbF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 1 5.0V 1 0.1 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 175 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 59A I D , Drain-to-Source Current (A) 2.0 100 TJ = 175 ° C 1.5 10 1.0 1 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 4 6 8 10 12 14 0.5 0.1 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFB/IRFS/IRFSL59N10DPbF 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 20 ID = 35.4A VGS , Gate-to-Source Voltage (V) 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance(pF) 10000 12 Ciss 1000 8 Coss 4 Crss 100 1 10 100 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 TJ = 175 ° C 10us 100 100us 10 TJ = 25 ° C 1 10 1ms 10ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 1 1 TC = 25 ° C TJ = 175 ° C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFB/IRFS/IRFSL59N10DPbF 60 V DS VGS RG RD 50 D.U.T. + ID , Drain Current (A) 40 -VDD VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB/IRFS/IRFSL59N10DPbF EAS , Single Pulse Avalanche Energy (mJ) 1200 15V ID 14.5A 25.0A BOTTOM 35.4A TOP 900 VDS L DRIVER RG 20V D.U.T IAS tp 600 + V - DD A 0.01Ω 300 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. VGS QGS VG QG 12V .2µF 50KΩ .3µF QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFB/IRFS/IRFSL59N10DPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFB/IRFS/IRFSL59N10DPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS HEXFET GATE 11234LEAD ASSIGNMENTS IGBTs, CoPACK 14.09 (.555) 13.47 (.530) 2 GATE- DRAIN 3DRAINSOURCE SOURCE 4 - DRAIN DRAIN 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 8 www.irf.com IRFB/IRFS/IRFSL59N10DPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN THE AS SEMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBE R F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER F 530S DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SIT E CODE www.irf.com 9 IRFB/IRFS/IRFSL59N10DPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL 3103L LOT CODE 1789 AS S EMB LED ON WW 19, 1997 IN T HE AS S EMB LY LINE "C" Note: "P" in ass embly line position indicates "L ead-F ree" INTERNATIONAL RECT IF IER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEE K 19 LINE C OR INTE RNATIONAL RECT IFIER L OGO AS S EMBL Y LOT CODE PART NUMBER DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBL Y S IT E CODE 10 www.irf.com IRFB/IRFS/IRFSL59N10DPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 0.8mH RG = 25Ω, IAS = 35.4A. † This is only applied to TO-220AB package TJ ≤ 175°C ‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ƒ ISD ≤ 35.4A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 www.irf.com 11