IRFS9N60A

PD - 91817A SMPS MOSFET IRFS9N60A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l VDSS 600V RDS(on) max 0.75Ω ID 9.2A GDS D2Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l l Active Clamped Forward Main Switch Notes  through … are on page 9 www.irf.com 1 9/23/99 IRFS9N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 600 ––– ––– V VGS = 0V, ID = 250µA ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA† ––– ––– 0.75 Ω VGS = 10V, ID = 5.5.A „ 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 600V, VGS = 0V µA ––– ––– 250 VDS = 480V, VGS = 0V, T J = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 13 25 30 22 1400 180 7.1 1957 49 96 Max. Units Conditions ––– S VDS = 25V, ID = 3.1A 49 ID = 9.2A 13 nC VDS = 400V 20 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 300V ––– ID = 9.2A ns ––– RG = 9.1Ω ––– R D = 35.5Ω,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 480V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 290 9.2 17 Units mJ A mJ Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state) Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– ––– Max. 0.75 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol ––– ––– 9.2 showing the A G integral reverse ––– ––– 37 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V „ ––– 530 800 ns TJ = 25°C, IF = 9.2A ––– 3.0 4.4 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFS9N60A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 10 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 4.7V 20µs PULSE WIDTH TJ = 150 °C 1 10 100 0.1 0.1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 ID = 9.2A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 10 TJ = 150 ° C 2.0 1.5 TJ = 25 ° C 1 1.0 0.5 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFS9N60A 2400 20 2000 VGS , Gate-to-Source Voltage (V) V GS C is s C rss C o ss = = = = 0V, f = 1M H z C g s + C g d , Cd s S H O R TE D C gd C ds + C gd ID = 9.2A 400V VDS = 480V VDS = 300V VDS = 120V 16 C , Capacitance (pF ) C i ss 1600 C o ss 1200 12 8 800 400 C r ss 4 0 1 10 100 1000 A 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 V D S , D rain-to-S ource V olta g e ( V ) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 I D , Drain Current (A) 100 TJ = 150 ° C 10us 10 100us 1ms 1 10ms 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.5 0.7 1.0 1.2 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFS9N60A 10.0 VDS VGS RD 8.0 D.U.T. + RG I D , Drain Current (A) -VDD 6.0 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFS9N60A 600 EAS , Single Pulse Avalanche Energy (mJ) TOP 500 1 5V BOTTOM ID 4.1A 5.8A 9.2A VDS L D R IV E R 400 RG 20V tp D .U .T IA S 300 + V - DD A 0 .0 1 Ω 200 Fig 12a. Unclamped Inductive Test Circuit 100 0 25 50 75 100 125 150 V (B R )D SS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFS9N60A Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFS9N60A D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.irf.com IRFS9N60A Tape & Reel Information D2Pak TR R 1 .6 0 (.0 63 ) 1 .5 0 (.0 59 ) 4 .1 0 ( .1 6 1) 3 .9 0 ( .1 5 3) 1.60 (.06 3) 1.50 (.05 9) 0 .3 68 (.0 145 ) 0 .3 42 (.0 135 ) F E ED D IRE C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1.60 (.457 ) 1 1.40 (.449 ) 15 .4 2 (.60 9) 15 .2 2 (.60 1) 24.30 (.95 7) 23.90 (.94 1) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1.75 (.0 69 ) 1.25 (.0 49 ) 16 .1 0 (.63 4) 15 .9 0 (.62 6) 4 .7 2 (.13 6) 4 .5 2 (.17 8) F E ED D IR E CT IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 33 0.00 (14.173) M AX . 60.00 (2.362) M IN. NO TE S : 1. CO MF OR M S TO EIA-418. 2. CO N TRO LLIN G DIM ENSIO N : MILLIM ET ER . 3. DIM ENS ION MEAS URED @ HU B. 4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E. 30.40 (1.197) MA X. 26.40 (1.039) 24.40 (.961) 4 3 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 6.8mH RG = 25Ω, IAS = 9.2A. (See Figure 12) ƒ ISD ≤ 9.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/99 www.irf.com 9