IRFSL42N20D

PD - 94114 PROVISIONAL SMPS MOSFET IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.055Ω ID 42.6A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB42N20D and Current D2Pak IRFS42N20D TO-262 IRFSL42N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 42.6 30 170 3.8 300 2 ± 30 TBD -55 to + 175 260 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes  through ‡ are on page 6 www.irf.com 1 03/05/01 IRFB/IRFS/IRFSL42N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– TBD ––– ––– ––– ––– ––– ––– PROVISIONAL Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.055 Ω VGS = 10V, ID = 25.5A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. TBD ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 103 26 48 TBD TBD TBD TBD 3470 560 120 TBD TBD TBD Max. Units Conditions ––– S VDS = 25V, ID = 25.5A ––– ID = 25.5A ––– nC VDS = 160V ––– VGS = 10V „ ––– VDD = 100V ––– ID = 25.5A ns ––– RG = TBDΩ ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz† ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. TBD 25.5 30 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.50 ––– ––– Max. 0.5 ––– 62 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol ––– ––– 42.6 showing the A G integral reverse ––– ––– 170 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 25.5A, VGS = 0V „ ––– TBD TBD ns TJ = 25°C, IF = 25.5A ––– 2.4 3.6 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com PROVISIONAL IRFB/IRFS/IRFSL42N20D TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 ( .1 1 3 ) 2 .6 2 ( .1 0 3 ) 1 0 .5 4 ( .4 1 5 ) 1 0 .2 9 ( .4 0 5 ) 3 .7 8 ( .1 4 9 ) 3 .5 4 ( .1 3 9 ) -A6.4 7 ( .2 5 5 ) 6.1 0 ( .2 4 0 ) -B4 .6 9 ( .1 8 5 ) 4 .2 0 ( .1 6 5 ) 1 .3 2 ( .0 5 2 ) 1 .2 2 ( .0 4 8 ) 4 1 5 .2 4 ( .6 0 0 ) 1 4 .8 4 ( .5 8 4 ) 1 .1 5 ( .0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU RC E 4 - D R A IN 1 4 .0 9 ( .5 5 5 ) 1 3 .4 7 ( .5 3 0 ) 4 .0 6 ( .1 6 0 ) 3 .5 5 ( .1 4 0 ) 3X 3X 1 .4 0 ( .0 5 5 ) 1 .1 5 ( .0 4 5 ) 0 .9 3 ( .0 3 7 ) 0 .6 9 ( .0 2 7 ) M BAM 3X 0 .5 5 ( .0 2 2 ) 0 .4 6 ( .0 1 8 ) 0 .3 6 ( .0 1 4 ) 2 .5 4 ( .1 0 0 ) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 2 .9 2 ( .1 1 5 ) 2 .6 4 ( .1 0 4 ) 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y L O T C O D E 9 B 1M A IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEM BLY LOT COD E PART NU M BER IR F 1 0 1 0 9246 9B 1M D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK www.irf.com 3 IRFB/IRFS/IRFSL42N20D D2Pak Package Outline PROVISIONAL 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.9 3 (.0 37 ) 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 4 www.irf.com PROVISIONAL IRFB/IRFS/IRFSL42N20D TO-262 Package Outline TO-262 Part Marking Information www.irf.com 5 IRFB/IRFS/IRFSL42N20D D2Pak Tape & Reel Information TRR 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) PROVISIONAL 1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9) 0.3 68 (.0 14 5 ) 0.3 42 (.0 13 5 ) F E E D D IRE CT IO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 5.42 (.60 9) 1 5.22 (.60 1) 24 .3 0 (.9 57 ) 23 .9 0 (.9 41 ) TR L 10.9 0 (.4 29 ) 10.7 0 (.4 21 ) 1.7 5 (.06 9 ) 1.2 5 (.04 9 ) 1 6.10 (.63 4) 1 5.90 (.62 6) 4 .7 2 (.1 36 ) 4 .5 2 (.1 78 ) F E E D D IR E C TIO N 13.50 (.5 32) 12.80 (.5 04) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) M AX . 60.00 (2.362) MIN . N O TES : 1. C O MF O RM S TO EIA-418. 2. C O NT RO LL ING D IM EN SIO N: MIL LIM ETER . 3. D IM ENS IO N M EAS URE D @ HU B. 4. IN C LUD ES FL ANG E D ISTO R TIO N @ O U TER E DG E. 26.40 (1.039) 24.40 (.9 61) 30.40 (1.197) MA X. 4 3 Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = TBDmH RG = TBDΩ, I AS = 25.5A. † This is only applied to TO-220AB package T J ≤ 175°C ‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ƒ ISD ≤ 25.5A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS, IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 9/00 6 www.irf.com