PD - 95936B
IRFB4610PbF IRFS4610PbF IRFSL4610PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability
HEXFET® Power MOSFET
D
G S
VDSS RDS(on) typ. max. ID
100V 11m: 14m: 73A
S D G
TO-220AB IRFB4610PbF
S GD
D2Pak IRFS4610PbF
S D G
TO-262 IRFSL4610PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dV/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
73 52 290 190 1.3 ± 20 7.6 -55 to + 175 300 10lb in (1.1N m)
Units
A
f
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
W W/°C V V/ns °C
e
x
x
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current
Ã
d
370 See Fig. 14, 15, 16a, 16b,
mJ A mJ
Repetitive Avalanche Energy
f
Thermal Resistance
Symbol
RθJC RθCS RθJA RθJA Junction-to-Case
j
Parameter
Typ.
––– 0.50 ––– –––
Max.
0.77 ––– 62 40
Units
°C/W
Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-Ambient (PCB Mount) , D2Pak
j
ij
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1
01/23/06
IRF/B/S/SL4610PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance
Min. Typ. Max. Units
100 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– ––– 0.085 ––– 11 14 ––– 4.0 ––– 20 ––– 250 ––– 200 ––– -200 1.5 –––
Conditions
V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 44A V VDS = VGS, ID = 100µA µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω f = 1MHz, open drain
f
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
––– 90 20 36 18 87 53 70 3550 260 150 330 380 ––– 140 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC
Conditions
VDS = 50V, ID = 44A ID = 44A VDS = 80V VGS = 10V VDD = 65V ID = 44A RG = 5.6Ω VGS = 10V VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V VGS = 0V, VDS = 0V to 80V
73 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Effective Output Capacitance (Energy Related) ––– ––– Effective Output Capacitance (Time Related)
ns
f f
pF
h, See Fig.11 g, See Fig. 5
D
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
––– ––– ––– ––– 73 290 A
Conditions
MOSFET symbol showing the integral reverse
G S
Ã
p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 44A, VGS = 0V VR = 85V, ––– 35 53 ns TJ = 25°C IF = 44A TJ = 125°C ––– 42 63 di/dt = 100A/µs ––– 44 66 nC TJ = 25°C TJ = 125°C ––– 65 98 ––– 2.1 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
f
Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.39mH RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use above this value. ISD ≤ 44A, di/dt ≤ 660A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as When mounted on 1" square PCB (FR-4 or G-10 Material). For recom Rθ is measured at TJ approximately 90°C
Coss while VDS is rising from 0 to 80% VDSS . mended footprint and soldering techniques refer to application note #AN-994.
2
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IRF/B/S/SL4610PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
TOP
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
10
4.5V ≤ 60µs PULSE WIDTH Tj = 25°C
4.5V ≤ 60µs PULSE WIDTH Tj = 25°C
10 0.1 1 10 100
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
Fig 2. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current(Α)
100.0
2.5
ID = 73A VGS = 10V
TJ = 175°C
10.0
2.0
1.5
1.0
TJ = 25°C VDS = 25V
1.0
≤ 60µs PULSE WIDTH
0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
6000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 4000
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 44A VDS = 80V VDS= 50V VDS= 20V
5000
16
C, Capacitance (pF)
Ciss
12
3000
8
2000
4
1000
Coss Crss
1 10 100
0
0 0 20 40 60 80 100 120 140 QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRF/B/S/SL4610PbF
1000.0
1000
OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
TJ = 175°C
100
10.0
10
1msec 10msec Tc = 25°C Tj = 175°C Single Pulse
TJ = 25°C
1.0
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
DC 10 100 1000
0.1 1
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
80
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
125
ID , Drain Current (A)
60
120
115
40
110
20
105
0 25 50 75 100 125 150 175
100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
2.0
Fig 10. Drain-to-Source Breakdown Voltage
1600
1.5
1200
ID 4.6A 6.3A BOTTOM 44A
TOP
Energy (µJ)
1.0
800
0.5
400
0.0 0 20 40 60 80 100
0 25 50 75 100 125 150 175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
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IRF/B/S/SL4610PbF
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20 0.10 0.05 0.02
R1 R1 τJ τ1 τ2 R2 R2 τC τ1 τ2 τ
0.01
0.01
τJ
Ri (°C/W) τi (sec) 0.4367 0.001016 0.3337 0.009383
0.001
Ci= τi/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.0001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse 0.01
10
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.05 0.10
1
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C.
0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
400
EAR , Avalanche Energy (mJ)
300
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 44A
200
100
0 25 50 75 100 125 150 175
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRF/B/S/SL4610PbF
5.0
16
VGS(th) Gate threshold Voltage (V)
ID = 1.0A
4.0
ID = 1.0mA ID = 100µA
ID = 250µA
12
IRRM - (A)
3.0
8
2.0
4
IF = 29A VR = 85V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000
1.0 -75 -50 -25 0 25 50 75 100 125 150 175
0
TJ , Temperature ( °C )
dif / dt - (A / µs)
Fig 16. Threshold Voltage Vs. Temperature
16
Fig. 17 - Typical Recovery Current vs. dif/dt
300
12
200
8
QRR - (nC)
100
IRRM - (A)
4
IF = 44A VR = 85V TJ = 125°C TJ = 25°C
IF = 29A VR = 85V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000
0 100 200 300 400 500 600 700 800 900 1000
0
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
300
Fig. 19 - Typical Stored Charge vs. dif/dt
200
QRR - (nC)
100
IF = 44A VR = 85V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000
0
dif / dt - (A / µs)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRF/B/S/SL4610PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
• • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01Ω
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD VDS
Fig 22b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
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Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
7
IRF/B/S/SL4610PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
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rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@
Q6SUÃIVH7@S
96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ ( GDI@Ã8
TO-220AB packages are not recommended for Surface Mount Application.
8
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IRF/B/S/SL4610PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
@Y6HQG@) UCDTÃDTÃ6IÃDSG" "G GPUÃ8P9@Ã &'( 6TT@H7G@9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S
96U@Ã8P9@ `@6SÃ&Ã2Ã ((& X@@FÃ ( GDI@Ã8
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S
96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6SÃ&Ã2Ã ((& X@@FÃ ( 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@
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9
IRF/B/S/SL4610PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@
10
Q6SUÃIVH7@S A$"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@
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IRF/B/S/SL4610PbF
D2Pak (TO-263AB) Tape & Reel Information
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/06
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