IRFU1N60APBF

SMPS MOSFET PD - 95518A IRFR1N60APbF IRFU1N60APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Correction l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds VDSS 600V Rds(on) max 7.0Ω ID 1.4A D-Pak IRFR1N60A I-Pak IRFU1N60A Max. 1.4 0.89 5.6 36 0.28 ± 30 3.8 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l Low Power Single Transistor Flyback Notes  through … are on page 9 www.irf.com 1 12/03/04 IRFR/U1N60APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 600 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA 7.0 Ω VGS = 10V, ID = 0.84A „ 4.0 V VDS = VGS, ID = 250µA 25 VDS = 600V, VGS = 0V µA 250 VDS = 480V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 0.88 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 9.8 14 18 20 229 32.6 2.4 320 11.5 130 Max. Units Conditions ––– S VDS = 50V, ID = 0.84A 14 ID = 1.4A 2.7 nC VDS = 400V 8.1 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 250V ––– ID = 1.4A ns ––– RG = 2.15Ω ––– RD = 178Ω,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz ––– VGS = 0V, V DS = 0V to 480V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current  Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 93 1.4 3.6 Units mJ A mJ Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)ˆ Junction-to-Ambient Typ. ––– ––– ––– Max. 3.5 50 110 Units °C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 1.4 showing the A G integral reverse ––– ––– 5.6 S p-n junction diode. ––– ––– 1.6 V TJ = 25°C, IS = 1.4A, VGS = 0V „ ––– 290 440 ns TJ = 25°C, IF = 1.4A ––– 510 760 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U1N60APbF 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source Current (A) 1 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 0.1 4.5V 4.5V 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 1 10 20µs PULSE WIDTH TJ = 150 ° C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 1.4A I D , Drain-to-Source Current (A) 2.5 TJ = 150 ° C 2.0 1 1.5 TJ = 25 ° C 1.0 0.5 0.1 4.0 V DS = 100V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U1N60APbF 10000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = C gs + C gd, C dsSHORTED C rss = C gd C oss = C ds + C gd 20 ID = 1.4A VDS = 480V VDS = 300V VDS = 120V 16 C, Capacitance (pF) 1000 C iss 100 12 8 C oss 10 4 Crss 1 1 10 100 1000 A 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 13 8 10 12 14 V DS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) TJ = 150 ° C 1 10 10us 100us 1 1ms TJ = 25 ° C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 10ms 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U1N60APbF 1.6 V DS VGS RD ID , Drain Current (A) 1.2 RG 10V D.U.T. + -VDD 0.8 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 0.4 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U1N60APbF 15V EAS , Single Pulse Avalanche Energy (mJ) 200 VDS L DRIVER 160 ID 0.65A 0.9A BOTTOM 1.4A TOP RG 20V D.U.T IAS tp + V - DD 120 A 0.01Ω 80 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD V DSav , Avalanche Voltage (V) 770 750 Charge 730 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 710 50KΩ 12V .2µF .3µF 690 D.U.T. VGS 3mA + V - DS 670 0.0 A 0.4 0.8 1.2 1.6 I av , Avalanche Current (A) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com IRFR/U1N60APbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFR/U1N60APbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-F ree" PART NUMBER INTERNAT IONAL RECT IF IER LOGO IRFU120 12 916A 34 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECTIF IER LOGO IRFU120 12 34 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY S ITE CODE AS SEMBLY LOT CODE 8 www.irf.com IRFR/U1N60APbF I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) ) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WITH ASS EMBLY LOT CODE 5678 AS SEMB LED ON WW 19, 1999 IN THE AS SEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 78 ASS EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 56 78 AS SEMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMBLY SIT E CODE www.irf.com 9 IRFR/U1N60APbF Dimensions are shown in millimeters (inches) TR D-Pak (TO-252AA) Tape & Reel Information TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION N OTES : 1 . CONTROLLING DIMENSION : MILLIMETER. 2 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3 . OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time † When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 95mH TJ ≤ 150°C RG = 25Ω, IAS = 1.4A. (See Figure 12) ƒ ISD ≤ 1.4A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS, Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 10 www.irf.com