IRFU24N15D

PD - 94392 SMPS MOSFET Applications High frequency DC-DC converters IRFR24N15D IRFU24N15D HEXFET® Power MOSFET l VDSS 150V RDS(on) max 95mΩ ID 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR24N15D I-Pak IRFU24N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 24 17 96 140 0.92 ± 30 4.9 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 1.1 50 110 Units °C/W Notes  through … are on page 10 www.irf.com 1 03/14/02 IRFR24N15D/IRFU24N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.18 82 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA † 95 mΩ VGS = 10V, ID = 14A „ 5.0 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 8.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 30 7.4 17 11 53 19 15 890 220 46 1460 95 200 Max. Units Conditions ––– S VDS = 25V, ID = 14A 45 ID = 14A 11 nC VDS = 120V 26 VGS = 10V, „ ––– VDD = 75V ––– ID = 14A ns ––– RG = 6.8Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 120V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 170 14 14 Units mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 24 ––– ––– showing the A G integral reverse ––– ––– 96 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V „ ––– 110 ––– ns TJ = 25°C, IF = 14A ––– 450 ––– nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR24N15D/IRFU24N15D 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 100 10 10 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 1 5.0V 1 0.1 5.0V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0.1 1 10 100 0.1 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0  TJ = 175 ° C 2.5 I D = 24A  RDS(on) , Drain-to-Source On Resistance I D, Drain-to-Source Current (A) 10 2.0 (Normalized) 1.5 1 1.0  TJ = 25 ° C 0.1 4 6 8 10 0.5  V DS= 50V 20µs PULSE WIDTH 12 14 16 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V  100 120 140 160 180 V GS Gate-to-Source Voltage (V) , TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR24N15D/IRFU24N15D 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 12 I D = 14A  10  V DS = 120V V DS = 75V V DS = 30V C, Capacitance(pF) VGS, Gate-to-Source Voltage (V) 1000 Ciss 8 6 Coss 100 4 Crss 2 10 1 10 100 1000 0 0 5 10 15 20 25 30 35 VDS , Drain-to-Source Voltage (V) Q G, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) TJ = 175 ° C  I SD, Reverse Drain Current (A) 10 ID, Drain-to-Source Current (A) 100 10 100µsec 1msec T J = 25 ° C  1 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) 10msec 0.1 0.0 0.5 1.0 1.5 V GS = 0 V  2.0 2.5 V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR24N15D/IRFU24N15D 25 VDS VGS RD 20 D.U.T. + RG -VDD ID , Drain Current (A) 15 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 D = 0.50 Thermal Response 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = 2. Peak T t1 / t 2 J = P DM x Z thJC  P DM t1 t2 +T C 1 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR24N15D/IRFU24N15D 1 5V 320 VDS L D R IV E R 240  ID TOP 5.9A 10A 14A BOTTOM RG 20V tp D .U .T IA S + V - DD A E AS , Single Pulse Avalanche Energy (mJ) 160 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit 80 V (B R )D SS tp 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 12V .2µF 50KΩ .3µF QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR24N15D/IRFU24N15D Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR24N15D/IRFU24N15D D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 ) 4 .5 7 ( .1 8 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) M AMB N O TE S : 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN T HE ASSEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 12 916A 34 ASSEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A 8 www.irf.com IRFR24N15D/IRFU24N15D I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) 2 3 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 3X 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) M AMB 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 2 .28 (.0 9 0 ) 2X 0 .2 5 (.0 1 0 ) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN T HE ASSEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 919A 56 78 DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A ASSEMBLY LOT CODE www.irf.com 9 IRFR24N15D/IRFU24N15D D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16 .3 ( .641 ) 15 .7 ( .619 ) 12.1 ( .47 6 ) 11.9 ( .46 9 ) F E E D D IR E C T IO N 8.1 ( .318 ) 7.9 ( .312 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O LLIN G D IME N S IO N : M ILL IM ET E R . 2 . A LL D IM EN S IO N S A R E SH O W N IN M ILLIM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N FO R MS T O E IA -481 & E IA -54 1. 1 3 IN C H 16 m m N O TE S : 1. O U TL IN E C O N F O R M S T O E IA -481 . Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ‚ Starting TJ = 25°C, L = 1.7mH RG = 25Ω, IAS = 14A. TJ ≤ 175°C. ƒ ISD ≤ 14A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/02 10 www.irf.com This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.