IRFU3707

PD - 93934B SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l IRFR3707 IRFU3707 HEXFET® Power MOSFET VDSS 30V RDS(on) max 13mΩ ID 61A„ High Frequency Buck Converters for Computer Processor Power Benefits l l l Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRFR3707 I-Pak IRFU3707 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 30 ± 20 61 „ 51 „ 244 87 61 0.59 -55 to + 175 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 1.73 50 110 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through „ are on page 9 www.irf.com 1 8/22/00 IRFR/U3707 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.027 9.7 13.2 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 13 VGS = 10V, ID = 15A ƒ mΩ 17.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 37 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 19 8.2 6.3 18 8.5 78 11.8 3.3 1990 707 50 Max. Units Conditions ––– S VDS = 15V, ID = 49.6A ––– ID = 24.8A ––– nC VDS = 15V ––– VGS = 4.5V ƒ 27 VGS = 0V, VDS = 15V ––– VDD = 15V ––– ID = 24.8A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 213 61 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 61„ ––– 0.88 0.8 39 49 42 62 244 1.3 ––– 59 74 63 93 V ns nC ns nC A VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V ƒ TJ = 125°C, I S = 31A, VGS = 0V ƒ TJ = 25°C, I F = 31A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 31A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRFR/U3707 1000 VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP 1000 VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP 100 ID, Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 100 3.5V 10 3.5V 10 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 20µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 TJ = 25 ° C  R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 61A  I D , Drain-to-Source Current (A) 2.0 TJ = 175 ° C  1.5 100 1.0 0.5 10 3.0  V DS = 15V 20µs PULSE WIDTH 6.0 7.0 4.0 5.0 8.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U3707 3000 2500 VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 24.8A  8  VDS = 15V C, Capacitance (pF) 2000 Ciss  6 1500 1000 C oss 4 2 500 C rss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) 100 I D , Drain Current (A) TJ = 175 ° C   10us 100 10  100us TJ = 25 ° C  1 10  1ms 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 1.8 1  TC = 25 ° C TJ = 175 ° C Single Pulse 1 10  10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3707 70 VDS RD  LIMITED BY PACKAGE 60 VGS RG D.U.T. + I D , Drain Current (A) 50 40 30 -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 10 0 25 50 75 100 125 150 175 90% TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFR/U3707 R DS ( on ) , Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 50 100 150 200 250 ID , Drain Current ( A ) VGS = 10V VGS = 4.5V 0.013 0.012 0.011 ID = 31A 0.010 0.009 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 600 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA Charge IG ID 500  ID 10.1A 20.7A BOTTOM 24.8A TOP Current Sampling Resistors 400 Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms 300 200 15V V (B R )D S S tp VD S L DRIVER 100 RG 20 V D.U .T IA S + - VD D 0 25 50 75 100 125 150 175 A IAS tp 0.0 1 Ω Starting TJ , Junction Temperature ( ° C) Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRFR/U3707 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 ) 4 .5 7 ( .1 8 0 ) 0 .8 9 (.0 3 5 ) 3X 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) M AMB N O TE S : 2X 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information www.irf.com 7 IRFR/U3707 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) 2 3 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 3X 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) M AMB 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 2 .28 (.0 9 0 ) 2X 0 .2 5 (.0 1 0 ) I-Pak (TO-251AA) Part Marking Information 8 www.irf.com IRFR/U3707 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TR L 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 1 6 .3 ( .64 1 ) 1 5 .7 ( .61 9 ) 1 2 .1 ( .4 7 6 ) 1 1 .9 ( .4 6 9 ) FE E D D IR E C TIO N 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET E R . 2 . AL L D IM EN SIO N S AR E SH O W N IN M IL L IM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N F O R M S T O E IA -4 81 & E IA -54 1 . 1 3 IN C H 16 m m N O T ES : 1 . O U TL IN E C O N F O R M S T O E IA-4 8 1 . Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A ‚ Starting TJ = 25°C, L = 0.7 mH RG = 25Ω, IAS = 24.8 A. 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