IRFU3708PBF

PD - 95071A SMPS MOSFET Applications l IRFR3708PbF IRFU3708PbF HEXFET® Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Lead-Free VDSS 30V RDS(on) max 12.5mΩ ID 61A„ l l Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current D-Pak IRFR3708 I-Pak IRFU3708 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 30 ± 12 61 „ 51 „ 244 87 61 0.58 -55 to + 175 Units V V A W W W/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 1.73 50 110 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through „ are on page 9 www.irf.com 12/13/04 1 IRFR/U3708PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.028 8.5 10.0 15.0 ––– ––– ––– ––– ––– Max. Units ––– V ––– V/°C 12.5 14.0 m Ω 30.0 2.0 V 20 µA 100 200 nA -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A ƒ VGS = 4.5V, ID = 12A ƒ VGS = 2.8V, ID = 7.5A ƒ VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 49 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 24 6.7 5.8 14 7.2 50 17.6 3.7 2417 707 52 Max. Units Conditions ––– S VDS = 15V, ID = 50A ––– ID = 24.8A ––– nC VDS = 15V ––– VGS = 4.5V ƒ 21 VGS = 0V, ID = 24.8A, VDS = 15V ––– VDD = 15V ––– ID = 24.8A ns ––– RG = 0.6Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 213 62 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– 61„ 244 1.3 ––– 62 96 65 105 V ns nC ns nC A VSD trr Qrr trr Qrr ––– 0.88 ––– 0.80 ––– 41 ––– 64 ––– 43 ––– 70 Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25°C, IS = 31A, VGS = 0V ƒ TJ = 125°C, IS = 31A, VGS = 0V ƒ TJ = 25°C, IF = 31A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 31A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRFR/U3708PbF 1000 VGS TOP 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 1000 VGS 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 2.7V 2.7V 10 10 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 61A I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C 1.5 100 TJ = 175 ° C 1.0 0.5 10 2.0 V DS = 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U3708PbF 3500 2800 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 24.8A VDS = 15V 8 C, Capacitance (pF) Ciss 2100 6 1400 4 Coss 700 2 0 1 Crss 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 TJ = 175 ° C 10us 100 100us 10 TJ = 25 ° C 10 1ms 10ms 1 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 0.1 TC = 25 ° C TJ = 175 ° C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3708PbF 70 VDS LIMITED BY PACKAGE RD 60 VGS RG D.U.T. + ID , Drain Current (A) 50 40 30 -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 10 0 25 50 75 100 125 150 175 90% TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3708PbF RDS ( on ) , Drain-to-Source On Resistance Ω ) ( 0.025 ( , RDS(on) Drain-to -Source On ResistanceΩ ) 0.017 0.020 0.015 0.013 0.015 VGS = 4.5V 0.010 VGS = 10V 0.005 0 50 100 150 200 250 300 ID , Drain Current ( A ) 0.011 0.009 ID = 31A 0.007 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 600 EAS , Single Pulse Avalanche Energy (mJ) VG VGS 3mA Charge IG ID 480 ID 10A 20.7A BOTTOM 24.8A TOP Current Sampling Resistors Fig 14a&b. Gate Charge Test Circuit and Waveform 360 240 15V 120 V(BR)DSS tp VDS L DRIVER RG 20V D.U.T IAS + - VDD 0 25 50 75 100 125 150 175 A I AS tp 0.01Ω Starting TJ , Junction Temperature ( °C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRFR/U3708PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 916A 34 ASSEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 34 DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SIT E CODE ASSEMBLY LOT CODE www.irf.com 7 IRFR/U3708PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMB LED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RE CT IF IER LOGO PART NUMBER IRFU120 919A 56 78 AS SEMBLY LOT CODE DAT E CODE YE AR 9 = 1999 WE EK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER IRFU120 56 78 AS S EMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE 8 www.irf.com IRFR/U3708PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION N OTES : 1 . CONTROLLING DIMENSION : MILLIMETER. 2 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3 . OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. ‚ Starting TJ = 25°C, L = 0.7 mH RG = 25Ω, IAS = 24.8 A. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information12/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/