IRFU3711

PD- 94061 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l IRFR3711 IRFU3711 HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.5mΩ ID 110A„ D-Pak IRFR3711 I-Pak IRFU3711 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation… Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 110 „ 69 „ 440 2.5 120 0.96 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)… Junction-to-Ambient Typ. ––– ––– ––– Max. 1.04 50 110 Units °C/W Notes  through „ are on page 10 www.irf.com 1 2/7/01 IRFR/U3711 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.022 5.2 6.7 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 6.5 VGS = 10V, ID = 15A ƒ mΩ 8.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, T J = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 29 7.3 8.9 33 12 220 17 12 2980 1770 280 Max. Units Conditions ––– S VDS = 16V, ID = 30A 44 ID = 15A ––– nC VDS = 10V ––– VGS = 4.5V ƒ ––– VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 30A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– pF VDS = 10V ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 460 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time Recovery Charge Recovery Time Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 110„ A ––– 0.88 0.82 50 61 48 65 440 1.3 ––– 75 92 72 98 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V ƒ TJ = 125°C, I S = 30A, VGS = 0V ƒ TJ = 25°C, I F = 16A, VR=10V di/dt = 100A/µs ƒ TJ = 125°C, IF = 16A, VR=10V di/dt = 100A/µs ƒ 2 www.irf.com IRFR/U3711 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 2.7V 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 10 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 ID = 110A TJ = 25 ° C TJ = 150 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1.5 100 1.0 0.5 10 2.0 V DS = 25V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U3711 10 100000 ID = 30A VDS = 16V VDS = 10V VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 8 C, Capacitance(pF) 10000 6 Ciss Coss 1000 4 Crss 2 100 1 10 100 0 0 10 20 30 40 50 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) 100 TJ = 150 ° C ID , Drain-to-Source Current (A) 1000 10 100 100µsec 1msec TJ = 2 5 ° C 1 10 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 100 10msec 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3711 120 VDS LIMITED BY PACKAGE RD 100 VGS RG D.U.T. + I D , Drain Current (A) 80 -VDD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 90% 20 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3711 1400 15 V EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 1200 VDS L D R IV E R ID 13A 19A 30A 1000 RG 20V D .U .T IA S tp 0.0 1 Ω + - VD D 800 A 600 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U3711 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3711 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 ) 4 .5 7 ( .1 8 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) M AMB N O TE S : 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information 8 www.irf.com IRFR/U3711 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) 2 3 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 3X 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) M AMB 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 2 .28 (.0 9 0 ) 2X 0 .2 5 (.0 1 0 ) I-Pak (TO-251AA) Part Marking Information www.irf.com 9 IRFR/U3711 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16 .3 ( .641 ) 15 .7 ( .619 ) 12.1 ( .47 6 ) 11.9 ( .46 9 ) F E E D D IR E C T IO N 8.1 ( .318 ) 7.9 ( .312 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O LLIN G D IME N S IO N : M ILL IM ET E R . 2 . A LL D IM EN S IO N S A R E SH O W N IN M ILLIM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N FO R MS T O E IA -481 & E IA -54 1. 1 3 IN C H 16 m m N O TE S : 1. O U TL IN E C O N F O R M S T O E IA -481 . Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. ‚ Starting TJ = 25°C, L = 1.0mH RG = 25Ω, IAS = 30A. … When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/01 10 www.irf.com