IRFY11N50CMA

PD - 94167A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number IRFY11N50CMA BVDSS 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 10 6.6 40 125 1.0 ±20 205 10 12.5 9.6 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 08/07/01 IRFY11N50CMA Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 500 — — — 2.0 6.0 — — — — — — — — — — — — Typ Max Units — 0.59 — — — — — — — — — — — — — — — 6.8 — — 0.56 0.65 4.0 — 25 250 100 -100 58 15 26 22 71 47 43 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 6.6A ➃ VGS = 10V, ID = 10A VDS = VGS, ID = 250µA VDS ≥ 15V, IDS = 6.6A ➃ VDS = 500V ,VGS=0V VDS = 400V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 10A VDS = 400V VDD = 250V, ID = 10A, VGS =10V, RG = 9.1Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1390 216 12 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 10 40 1.5 660 4.5 Test Conditions A V ns µC Tj = 25°C, IS = 10A, VGS = 0V ➃ Tj = 25°C, IF = 10A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.0 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFY11N50CMA 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 1 4.5V 0.1 0.1 4.5V 0.01 0.1 1 20µs PULSE WIDTH  T = 25 C J ° 10 100 0.01 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 10A  I D , Drain-to-Source Current (A) 2.5 10 TJ = 150 ° C  TJ = 25 ° C  2.0 1.5 1 1.0 0.5 0.1 4.0  V DS =15 50V 20µs PULSE WIDTH 8.0 9.0 5.0 6.0 7.0 10.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFY11N50CMA 2400 2000 VGS , Gate-to-Source Voltage (V)  VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID  = 10A 16  VDS = 400V VDS = 250V VDS = 100V C, Capacitance (pF) 1600 Ciss  12 1200 C oss 8 800 400 C rss 4 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT  SEE FIGURE 13 30 40 50 60 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 10 TJ = 150 ° C  TJ = 25 ° C  ID, Drain-to-Source Current (A) 100 10 1 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) 10ms 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFY11N50CMA 10.0 VDS VGS RD 8.0 D.U.T. + I D , Drain Current (A) RG -VDD 6.0 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01  0.0001 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01  PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFY11N50CMA EAS , Single Pulse Avalanche Energy (mJ) 400 15V 300  TOP BOTTOM ID 4.5A 6.3A 10A VDS L D R IV E R RG D .U .T. IA S 200 + - VD D A VGS 20V tp 0 .01 Ω 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature ° C) ( J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFY11N50CMA Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = 50 V, Starting TJ = 25°C, L= 4.0mH Peak IAS = 10A, VGS =10 V, RG= 25Ω ƒ ISD ≤ 10A, di/dt ≤ 350 A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 500V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 www.irf.com 7