IRFZ24NS

厂商：
IRF
封装：
描述：
IRFZ24NS - Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) - International Rectifier

数据手册：

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详情介绍
数据手册
价格&库存

IRFZ24NS 数据手册

PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 68 3.8 45 0.30 ± 20 71 10 4.5 6.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 3.3 40 Units °C/W 9/22/97 IRFZ24NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆ V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr t d(off) tf LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 ––– ––– 2.0 4.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.052 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.9 34 19 27 Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID =1mA 0.07 Ω VGS =10V, ID = 10A 4.0 V VDS = VGS, ID = 250µA ––– S V DS = 25V, I D = 10A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 V GS = 20V nA -100 VGS = -20V 20 I D = 10A 5.3 nC VDS = 44V 7.6 VGS = 10V, See Fig. 6 and 13 ––– VDD = 28V ––– I D = 10A ns ––– R G = 24Ω ––– RD = 2.6Ω, See Fig. 10 Between lead, nH 7.5 ––– and center of die contact 370 ––– VGS = 0V 140 ––– pF VDS = 25V 65 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr t on Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 17 showing the A G integral reverse ––– ––– 68 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 10A, VGS = 0V ––– 56 83 ns TJ = 25°C, IF = 10A ––– 120 180 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L =1.0mH RG = 25Ω, I AS = 10A. (See Figure 12) Pulse width ≤ 280µs; duty cycle ≤ 2%. Uses IRFZ24N data and test conditions ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IRFZ24NS/L 100 V GS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP 100 I , D ra in -to -S o u rce C u rre n t (A ) D I , D ra in -to -S o u rce C u rre n t (A ) D V GS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP 10 10 4 .5V 4 .5V 2 0µ s PU LSE W ID TH 1 0.1 1 TC = 25°C T J = 2 5°C 10 A 100 1 0.1 1 2 0 µs P UL SE W IDTH TJ 17 5°C TC = 175°C 10 A 100 V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = 17 A I D , D rain -to- S ou rce C ur ren t (A ) 2.5 TJ = 2 5 ° C T J = 1 7 5 °C 2.0 10 1.5 1.0 0.5 1 4 5 6 7 V DS = 2 5 V 2 0 µ s P U L SE W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFZ24NS/L 700 600 C , C a p a c ita n c e (p F ) 500 C i ss C o ss 400 300 V G S , G a te -to -S o u rc e V o lta g e (V ) V GS C is s C rss C oss = 0 V, f = 1M H z = C gs + C gd , Cds SH OR TE D = C gd = C d s + C gd 20 I D = 1 0A V DS = 4 4V V DS = 2 8V 16 12 8 200 Crs s 4 100 0 1 10 100 A 0 0 4 8 F O R TES T C IR CU IT SEE FIG U R E 13 12 16 20 A V D S , D rain-to-S ource Voltage (V ) Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 I S D , R e v e rse D ra in C u rre n t (A ) O PE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) TJ = 1 75 °C TJ = 25 °C 10 I D , D ra in C u rre n t (A ) 100 10µs 10 100µ s 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VG S = 0 V 1.8 A 1 1 T C = 2 5 °C T J = 17 5°C S ing le Pulse 10 1m s 10m s A 100 2.0 V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFZ24NS/L V DS 20 RD VGS RG D.U.T. + 16 -VDD ID , Drain Current (A) 10V 12 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit VDS 90% 4 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFZ24NS/L 140 L VDS D.U.T. RG + 10 V E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) TO P 120 BO TTO M 100 ID 4.2 A 7 .2A 10A VDD 80 IAS tp 0.01Ω 60 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 40 20 0 VD D = 2 5V 25 50 75 100 125 150 A 175 Starting T J , Junction Temperature (°C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFZ24NS/L Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14.For N-Channel HEXFETS IRFZ24NS/L D2Pak Package Outline 10.54 ( .415) 10.29 ( .405) 1.40 (.055) MAX. -A2 4.69 (.185) 4.20 (.165) -B 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 ( .200) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450) NO TE S: 1 DIM ENS IO NS AF T ER S OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982. 3 CO NT RO LLING DIME NSIO N : INCH. 4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS. LE AD ASS IG NM ENT S 1 - G AT E 2 - DRA IN 3 - S OU RC E 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information D2Pak IN TER NATION AL REC TIFIER L OGO AS SEMBLY LOT CODE A PART NU MBER F53 0S 9246 9B 1M DATE CODE (YYW W ) YY = YEAR W W = W EE K IRFZ24NS/L Package Outline TO-262 Outline Part Marking Information TO-262 IRFZ24NS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 3) 1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9) 0 .3 68 (.0 14 5 ) 0 .3 42 (.0 13 5 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 11 .6 0 (. 45 7 ) 11 .4 0 (. 44 9 ) 15 .4 2 (.60 9 ) 15 .2 2 (.60 1 ) 2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1) TR L 1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) FE E D D IR E C TIO N 1 3.5 0 (. 532 ) 1 2.8 0 (. 504 ) 2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 4 33 0.0 0 (14. 17 3) M AX . 6 0.0 0 (2 .36 2) M IN . N O T ES : 1. C O M F O R M S T O EIA -418 . 2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER . 3. D IM E N S IO N M EA S U R E D @ H U B . 4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E. 26 .40 (1. 03 9) 24 .40 (.9 61 ) 3 3 0.4 0 (1 .19 7) MA X . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/97

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IRFZ24NS

### 物料型号 - 型号：IRFZ24NS/L - 制造商：International Rectifier

### 器件简介 IRFZ24NS/L是一款由International Rectifier生产的HEXFET® Power MOSFET，采用先进的工艺技术，具有极低的导通电阻。它以快速开关速度和坚固的器件设计而闻名，适用于多种应用场景。

### 引脚分配 - D2Pak封装： - 1 - GATE（门极） - 2 - DRAIN（漏极） - 3 - SOURCE（源极）

- TO-262封装： - 1 - GATE（门极） - 2 - DRAIN（漏极） - 3 - SOURCE（源极）

### 参数特性 - 最大漏源电压（V(BR)DSS）：55V - 静态漏源导通电阻（RDS(on)）：0.07Ω - 最大连续漏电流（ID）：17A - 最大脉冲漏电流（IDM）：68A - 最大耗散功率（PD）：45W（在25°C时）

### 功能详解 IRFZ24NS/L具有快速开关特性和高耐压能力，使其适合于需要高效率和高可靠性的电源转换和电机控制应用。

### 应用信息 该器件适用于高电流应用，由于其低内阻，可以散耗高达2.0W的功率。同时，它还提供了通孔版本（IRFZ24NL），适用于低矮型应用。

### 封装信息 - D2Pak：表面贴装功率封装，适用于高电流应用。 - TO-262：通孔封装，适用于需要低矮型封装的应用。

IRFZ24NS 价格&库存

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