IRFZ34E

PD - 9.1672A IRFZ34E HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l l D VDSS = 60V G S RDS(on) = 0.042Ω ID = 28A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 28 20 112 68 0.46 ± 20 97 17 6.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. –––– –––– –––– Typ. –––– 0.50 –––– Max. 2.2 –––– 62 Units °C/W 11/4/97 IRFZ34E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 60 ––– ––– 2.0 7.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.056 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 5.1 30 22 30 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.042 Ω VGS = 10V, ID = 17A„ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 17A 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 30 ID = 17A 6.7 nC VDS = 48V 12 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 30V ––– ID = 17A ns ––– RG = 13Ω ––– RD = 1.8Ω, See Fig. 10 „ D Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact S 680 ––– VGS = 0V 220 ––– pF VDS = 25V 80 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 63 130 28 A 100 1.3 95 200 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25°C, IS = 17A, VGS = 0V „ TJ = 25°C, IF = 17A di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 17 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ Starting TJ = 25°C, L = 670µH RG = 25Ω, IAS = 17A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. IRFZ34E 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 4.5V 1 1 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 1 20µs PULSE WIDTH TJ = 175 °C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 TJ = 25 ° C TJ = 175 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 28A I D , Drain-to-Source Current (A) 2.0 10 1.5 1.0 1 0.5 0.1 4 5 6 7 V DS = 25V 20µs PULSE WIDTH 8 9 10 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFZ34E 1200 VGS , Gate-to-Source Voltage (V) 1000 VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 17 A VDS = 48V VDS = 30V C, Capacitance (pF) 800 Ciss 15 600 C oss 10 400 5 200 Crss 0 1 10 100 0 0 5 10 15 FOR TEST CIRCUIT SEE FIGURE 13 20 25 30 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 100 10us TJ = 150 ° C 10 100us 10 1ms 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 1 1 TC = 25 ° C TJ = 175 ° C Single Pulse 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFZ34E 30 VDS 25 RD VGS RG D.U.T. + I D , Drain Current (A) 20 - VDD 10 V 15 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 90% 5 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFZ34E L 200 EAS , Single Pulse Avalanche Energy (mJ) VDS D.U.T. RG + 10 V TOP BOTTOM 150 ID 6.9A 12A 17A VDD IAS tp 0.01Ω 100 Fig 12a. Unclamped Inductive Test Circuit 50 V(BR)DSS tp VDD VDS 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFZ34E Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFZ34E Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 .87 (.1 1 3 ) 2 .62 (.1 0 3 ) 10.5 4 (.4 15 ) 10.2 9 (.4 05 ) 3 .7 8 (.14 9 ) 3 .5 4 (.13 9 ) -A6.4 7 (.2 55 ) 6.1 0 (.2 40 ) -B4 .69 (.1 85 ) 4 .20 (.1 65 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 4 1 5.24 (.60 0 ) 1 4.84 (.58 4 ) 1.15 (.04 5) M IN 1 2 3 L EA D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 14 .09 (.5 5 5 ) 13 .47 (.5 3 0 ) 4 .06 (.16 0 ) 3 .55 (.14 0 ) 3X 3X 1 .40 (.0 55 ) 1 .15 (.0 45 ) 0.93 (.03 7 ) 0.69 (.02 7 ) M BAM 3X 0.5 5 (.0 2 2) 0.4 6 (.0 1 8) 0 .36 (.0 14 ) 2 .5 4 (.1 0 0) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 14.5 M , 1 9 82. 2 C O N TR O L LING D IM E N SIO N : INC H 2 .92 (.11 5 ) 2 .64 (.10 4 ) 3 O U TL IN E C O N F O R M S TO J E D E C O UT LIN E T O -2 2 0 -A B . 4 H EA T S IN K & LE A D M E A S UR E M E NT S D O N O T IN C L U D E B U R R S . Part Marking Information TO-220AB E XA M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CODE 9B1M A IN T E R N A T IO N A L R E C TIF IE R LO G O ASSEMBLY LOT CODE PART NUMBER IR F 1 0 1 0 9 24 6 9B 1M D A TE C O D E (YYW W ) YY = YE A R W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97