IRFZ44EL

PD - 9.1714 PRELIMINARY IRFZ44ES/L HEXFET® Power MOSFET D l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 60V RDS(on) = 0.023Ω G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44EL) is available for low-profile applications. D 2 Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 48 34 192 110 0.71 ± 20 220 29 11 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.4 ––– 62 Units °C/W www.irf.com 1 11/18/97 IRFZ44ES/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS DV(BR)DSS/DTJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 60 ––– ––– 2.0 15 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.063 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 12 60 70 70 7.5 1360 420 160 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA… 0.023 Ω VGS = 10V, ID = 29A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 30V, ID = 29A… 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 60 ID = 29A 13 nC VDS = 48V 23 VGS = 10V, See Fig. 6 and 13 „… ––– VDD = 30V ––– ID = 29A ns ––– RG = 15Ω ––– RD = 1.1Ω, See Fig. 10 „… Between lead, ––– nH and center of die contact ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 48 ––– ––– showing the A G integral reverse ––– ––– 192 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „ ––– 69 104 ns TJ = 25°C, IF = 29A ––– 177 266 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRFZ44E data and test conditions ‚ Starting TJ = 25°C, L = 520µH TJ ≤ 175°C RG = 25Ω, IAS = 29A. (See Figure 12) ƒ I ≤ 29A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, SD ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. 2 www.irf.com IRFZ44ES/L 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 4.5V 10 4.5V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 1 20µs PULSE WIDTH TJ = 175 °C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 48A I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 175 ° C 100 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 25V 20µs PULSE WIDTH 8 9 10 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ44ES/L 2500 VGS , Gate-to-Source Voltage (V) 2000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 29 VDS = 48V VDS = 30V 16 C, Capacitance (pF) Ciss 1500 12 Coss 1000 8 500 Crss 4 0 1 10 100 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 T = 175 ° C J 100 10us 100us 10 10 TJ = 25 ° C 1ms 1 0.5 V GS = 0 V 1.0 1.5 2.0 2.5 1 1 TC = 25 ° C TJ = 175 ° C Single Pulse 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFZ44ES/L RD 50 50 V DS VGS D.U.T. + V DD I D , Drain Current (A) I D , Drain Current (A) 40 40 RG - 30 30 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 10 0 0 25 25 50 50 75 100 125 150 75 125 150 TC , Case 100 Temperature ( ° C) TC , Case Temperature ( ° C) 175 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ44ES/L EAS , Single Pulse Avalanche Energy (mJ) 500 15V TOP 400 BOTTOM ID 12A 21A 29A VDS L D R IV E R RG 20V D .U .T IA S tp 300 + - VD D A 0 .0 1 Ω 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 100 0 25 50 75 100 125 150 175 Starting T , Junction Temperature ° C) ( J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ44ES/L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ44ES/L D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 15.4 9 (.610) 14.7 3 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.8 9 (.350) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.450) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information D2Pak IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE PART NUMBER F530S 9246 9B 1M A D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK www.irf.com 8 IRFZ44ES/L Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com 9 IRFZ44ES/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T IO N 1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 ) 2 7.4 0 (1 .07 9) 2 3.9 0 (.9 41 ) 4 330.00 (14.173) M A X. 6 0.0 0 (2 .3 6 2) M IN . N O TES : 1. C O M F O R M S T O E IA -41 8 . 2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 26 .40 (1.039) 24 .40 (.961) 3 3 0.4 0 (1 .1 97 ) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97 10 www.irf.com