IRFZ44NS

PD - 94153 Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRFZ44NS IRFZ44NL HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175Ω Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44NL) is available for lowprofile applications. G ID = 49A S D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 49 35 160 3.8 94 0.63 ± 20 25 9.4 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ. ––– ––– Max. 1.5 40 Units °C/W www.irf.com 1 03/13/01 IRFZ44NS/IRFZ44NL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss EAS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy‚ Min. 55 ––– ––– 2.0 19 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 17.5 mΩ VGS = 10V, ID = 25A „ 4.0 V VDS = V GS, ID = 250µA ––– S VDS = 25V, ID = 25A„ 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 63 ID = 25A 14 nC VDS = 44V 23 VGS = 10V, See Fig. 6 and 13 ––– VDD = 28V ––– ID = 25A ns ––– RG = 12Ω ––– VGS = 10V, See Fig. 10 „ ––– nH Between lead, and center of die contact 1470 ––– VGS = 0V 360 ––– VDS = 25V 88 ––– pF ƒ = 1.0MHz, See Fig. 5 530… 150 † mJ IAS = 25A, L = 0.47mH Typ. ––– 0.058 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 12 60 44 45 7.5 Source-Drain Ratings and Characteristics IS I SM VSD trr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 49 ––– ––– showing the A G integral reverse ––– ––– 160 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V „ ––– 63 95 ns TJ = 25°C, IF = 25A ––– 170 260 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ƒ ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ Starting TJ = 25°C, L = 0.48mH RG = 25Ω, IAS = 25A. (See Figure 12) „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRFZ44NS/IRFZ44NL 1000 TO P V GS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 I , D rain-to-S ou rc e C urre nt (A ) D BO TTOM 100 I , Drain-to-S ource C urrent (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 4 .5 V 4 .5V 10 2 0 µ s P U L S E W ID T H 1 0.1 1 TJC==225 C 5° ° C T 10 100 A 1 0.1 1 2 0 µ s P U LS E W ID TH TJ = 1 75 T C = 175°C 10 100 A V D S , D rain-to-S ource V olta g e ( V ) V D S , D rain-to-S ource V olta g e ( V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R D S(o n) , D ra in-to-S o urc e O n R e s is tan c e (N orm aliz ed ) ID = 41A I D , D ra in -to -S ourc e C urre nt (A ) 2.0 100 TJ = 2 5 ° C TJ = 1 7 5 ° C 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 25V 2 0 µ s P U LS E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , G a te-to-S ource Vo lta g e (V) T J , J unc tion T em perature ( ° C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ44NS/IRFZ44NL 2500 20 2000 C i ss 1500 C o ss 1000 V G S , G ate-to-S ource V oltage (V ) V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd I D = 25 A V D S = 44 V V D S = 28 V 16 C , Capacitance (pF) 12 8 C r ss 500 4 0 1 10 100 A 0 0 10 20 30 F O R TE S T C IR C U IT S E E FIG U R E 1 3 40 50 60 70 A V D S , D rain-to-S ourc e V olta g e ( V ) Q G , T otal G ate C har g e ( nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , R everse Drain C urrent (A ) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) I D , Drain C urrent (A ) 100 100 10µ s T J = 1 75 ° C 100µ s 10 TJ = 25 ° C 10 1m s 1 0.5 1.0 1.5 2.0 V G S = 0V 2.5 A 1 1 T C = 2 5 °C T J = 17 5 ° C S in g le P u lse 10 10m s A 100 3.0 V S D , S ource-to-D rain V olta g e ( V ) V D S , D rain-to-S ource V olta g e ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFZ44NS/IRFZ44NL V DS 50 RD VGS RG D.U.T. + -V DD 40 I D , Drain Current (A) 10V 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01  PDM t1 t2 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ44NS/IRFZ44NL 500 L VDS D.U.T. RG + V - DD 10 V E A S , S ingle P ulse A valanche E nergy (m J) TO P 400 B O TTO M ID 1 0A 18 A 25A 300 IAS tp 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 100 0 V DD = 25 V 25 50 75 100 125 150 A 175 S tartin g T J , J unc tion T em perature ( ° C ) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ44NS/IRFZ44NL Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ44NS/IRFZ44NL D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.irf.com IRFZ44NS/IRFZ44NL Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com 9 IRFZ44NS/IRFZ44NL Tape & Reel Information D2Pak TR R 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1 .60 ( .06 3 ) 1 .50 ( .05 9 ) 0 .3 68 ( .0 1 4 5 ) 0 .3 42 ( .0 1 3 5 ) F E E D D IRE CTIO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1 .6 0 ( .4 5 7 ) 1 1 .4 0 ( .4 4 9 ) 1 5 .4 2 ( .6 0 9 ) 1 5 .2 2 ( .6 0 1 ) 2 4 .3 0 ( .9 5 7 ) 2 3 .9 0 ( .9 4 1 ) TR L 10 .9 0 ( .42 9 ) 10 .7 0 ( .42 1 ) 1 .75 ( .06 9 ) 1 .25 ( .04 9 ) 16 .10 ( .63 4 ) 15 .90 ( .62 6 ) 4 .7 2 ( .1 3 6 ) 4 .5 2 ( .1 7 8 ) F E E D D IRE C TIO N 13.50 ( .532 ) 12.80 ( .504 ) 2 7.4 0 ( 1.079 ) 2 3.9 0 ( .9 41 ) 4 33 0.00 ( 1 4.1 73 ) MA X. 60.00 ( 2.3 62 ) M IN . NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 26 .40 ( 1.03 9 ) 24 .40 ( .961 ) 3 3 0.40 ( 1.1 97 ) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 10 www.irf.com