IRFZ44V

PD - 93957A IRFZ44V HEXFET® Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS(on) = 16.5mW G S ID = 55A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 55 39 220 115 0.77 ± 20 115 55 11 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RqJC RqCS RqJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.3 ––– 62 Units °C/W www.irf.com 1 3/25/01 IRFZ44V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS DV(BR)DSS/DTJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 60 ––– ––– 2.0 24 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.062 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 97 40 57 4.5 7.5 1812 393 103 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 16.5 mW VGS = 10V, ID = 31A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 31A„ 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 51A 18 nC VDS = 48V 25 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 30V ––– ID = 51A ns ––– RG = 9.1W ––– RD = 0.6W , See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 55 ––– ––– showing the A G integral reverse ––– ––– 220 S p-n junction diode. ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V „ ––– 70 105 ns TJ = 25°C, IF = 51A ––– 146 219 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ I £ 51A, di/dt £ 227A/µs, VDD £ V(BR)DSS, SD TJ £ 175°C ‚ Starting TJ = 25°C, L = 89µH RG = 25W , IAS = 51A. (See Figure 12) „ Pulse width £ 300µs; duty cycle £ 2%. 2 www.irf.com IRFZ44V 1000 I D , Drain-to-Source Current (A) 100 10 4.5V 1 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 4.5V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 175°C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 3.0 ID = 55A I D , Drain-to-Source Current (A) 2.5 TJ = 2 5 ° C TJ = 175° C 100 2.0 1.5 10 1.0 0.5 1 4 5 6 7 8 V DS = 25V 20µs PULSE WIDTH 9 10 11 12 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ44V 4000 20 3000 Crss = Cgd Coss = Cds + Cgd VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED ID = 51A 16 V DS= 48V V DS= 30V V DS= 12V C, Capacitance(pF) 12 2000 Ciss 8 1000 Coss Crss 0 1 10 100 4 0 0 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD , Reverse Drain Current (A) TJ = 175° C OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 100 10us 10 TJ = 25 ° C 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.7 1.2 1.7 2.2 1 1 TC = 25 ° C TJ = 175 °C Single Pulse 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFZ44V RD 60 VDS VGS D.U.T. + VDD 50 RG ID , Drain Current (A) - 40 10V Pulse Width £ 1 µs Duty Factor £ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ44V EAS , Single Pulse Avalanche Energy (mJ) 250 15V 200 ID 21A 36A BOTTOM 51A TOP VDS L D R IV E R RG 20V D .U .T IA S tp 150 + - VD D A 0 .0 1 Ω 100 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ44V Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer ‚ - „ +  RG · · · · dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ44V Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048) 4 15.24 (.60 0) 14.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14.09 (.55 5) 13.47 (.53 0) 4.06 (.160) 3.55 (.140) 3X 3X 1 .40 (.0 55) 1 .15 (.0 45) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2.92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CO DE 9B1M A IN TE R N A T IO N A L R E C T IF IE R LO GO ASSEMBLY LOT CODE PART NUMBER IR F 1 0 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 8 www.irf.com