IRFZ46

PD-91277 IRFZ46N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 16.5mΩ G S ID = 53A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 53 37 180 107 0.71 ± 20 28 11 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.4 ––– 62 Units °C/W www.irf.com 1 01/24/01 IRFZ46N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy ‚ Min. 55 ––– ––– 2.0 19 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.057 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 76 52 57 4.5 7.5 1696 407 110 583… Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 16.5 mΩ VGS = 10V, ID = 28A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 28A„ 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 72 ID = 28A 11 nC VDS = 44V 26 VGS = 10V, See Fig. 6 and 13 ––– VDD = 28V ––– ID = 28A ns ––– RG = 12 Ω ––– VGS = 10V, See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 152† mJ IAS = 28A, L = 389µH D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 53 showing the A G integral reverse ––– ––– 180 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, I S = 28A, VGS = 0V „ ––– 67 101 ns TJ = 25°C, IF = 28A ––– 208 312 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ Starting TJ = 25°C, L = 389µH RG = 25Ω, IAS = 28A. (See Figure 12) „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C. 2 www.irf.com IRFZ46N 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 10 10 4.5V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 53A I D , Drain-to-Source Current (A) TJ = 25 ° C 2.5 100 2.0 TJ = 175 ° C 1.5 10 1.0 0.5 1 4 5 6 7 V DS = 25V 20µs PULSE WIDTH 8 9 10 11 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ46N 3000 2500 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) C iss 2000  VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 28A V DS = 44V V DS = 27V V DS = 11V 16 12 1500 Coss 8 1000 500 Crss 4 0 1 10 100 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 70 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) 100 TJ = 175 ° C ID, Drain-to-Source Current (A) 100 10 10 100µsec 1msec TJ = 25 ° C 1 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 VDS , Drain-toSource Voltage (V) 10msec 0.1 0.2 V GS = 0 V 0.7 1.2 1.7 2.2 VSD ,Source-to-Drain Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFZ46N 60 VDS 50 RD VGS RG D.U.T. + ID , Drain Current (A) 40 -VDD VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.0001 0.001 0.01 0.1  PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ46N EAS , Single Pulse Avalanche Energy (mJ) 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 1 5V VD S L D R IV E R  TOP BOTTOM ID 11A 20A 28A RG 20V D .U .T IA S tp 0 .01 Ω + - VD D A Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ46N Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRFZ46N TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 ( .11 3 ) 2.62 ( .10 3 ) 10 .54 ( .4 15 ) 10 .29 ( .4 05 ) 3 .7 8 ( .149 ) 3 .5 4 ( .139 ) -A 6.47 ( .25 5 ) 6.10 ( .24 0 ) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 ( .05 2 ) 1 .22 ( .04 8 ) 4 1 5.24 ( .60 0 ) 1 4.84 ( .58 4 ) 1.15 ( .04 5 ) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 ( .55 5 ) 1 3.47 ( .53 0 ) 4.06 ( .16 0 ) 3.55 ( .14 0 ) 3X 3X 1 .4 0 ( .0 55 ) 1 .1 5 ( .0 45 ) 0.93 ( .03 7 ) 0.69 ( .02 7 ) M BAM 3X 0.55 ( .02 2 ) 0.46 ( .01 8 ) 0 .3 6 ( .01 4 ) 2.54 ( .10 0 ) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 ( .11 5 ) 2 .64 ( .10 4 ) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . TO-220AB Part Marking Information E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 8 www.irf.com