IRFZ48RS

PD - 94074 HEXFET® Power MOSFET l l l l l l IRFZ48RS IRFZ48RL VDSS = 60V Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D RDS(on) = 0.018Ω G S ID = 50*A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak IRFZ48RS TO-262 IRFZ44RL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 50* 50* 290 190 1.3 ± 20 100 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.8 ––– 62 Units °C/W www.irf.com 1 05/21/02 IRFZ48RS/IRFZ48RL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 60 ––– ––– 2.0 27 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.060 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 8.1 250 210 250 4.5 7.5 2400 1300 190 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.018 Ω VGS = 10V, ID = 43A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 43A„ 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 72A 29 nC VDS = 48V 36 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 30V ––– ID = 72A ns ––– RG = 9.1Ω ––– RD = 0.34Ω, See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 50* showing the A G integral reverse ––– ––– 290 S p-n junction diode. ––– ––– 2.0 V TJ = 25°C, IS = 72A, VGS = 0V „ ––– 120 180 ns TJ = 25°C, IF = 72A ––– 0.50 0.80 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 72A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ VDD = 25V, Starting TJ = 25°C, L = 22µH RG = 25Ω, IAS = 72A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. * Current limited by the package, (Die Current = 72A) 2 www.irf.com IRFZ48RS/IRFZ48RL Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID = 72A  2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V  20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ48RS/IRFZ48RL Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R  DS(on)  10us ID , Drain Current (A) 100  100us  1ms 10  10ms 1 0.1  1 TC = 25 ° C TJ = 175 °C Single Pulse 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFZ48RS/IRFZ48RL RD 80 VDS  LIMITED BY PACKAGE RG VGS D.U.T. + VDD ID , Drain Current (A) 60 - 10V 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.1 1 0.01 10  PDM t1 t2 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ48RS/IRFZ48RL EAS , Single Pulse Avalanche Energy (mJ) 250 15V 200 VDS L D R IV E R  ID 29A 51A BOTTOM 72A TOP RG 20V D .U .T IA S tp 150 + - VD D A 0 .0 1 Ω 100 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ48RS/IRFZ48RL Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ48RS/IRFZ48RL TO-262 Package Outline TO-262 Part Marking Information 8 www.irf.com IRFZ48RS/IRFZ48RL D2Pak Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200 ) 1 .39 (.055) 1 .14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 10.16 (.400) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X D2Pak Part Marking Information A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE PART NUMBER F530S 9246 9B 1M D A TE C O D E (Y YW W ) YY = YEAR W W = W EEK 9 www.irf.com IRFZ48RS/IRFZ48RL D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) FE E D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T IO N 13.50 (.5 32) 12.80 (.5 04) 27.40 (1.079 ) 23.90 (.9 41) 4 3 3 0.0 0 (14 .1 73 ) MAX. 6 0.00 (2 .36 2) M IN . NOTES : 1 . C O M F O R M S T O E IA -4 18 . 2 . C O N T R O LL IN G D IM EN S IO N : M ILL IM ET ER . 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C LU D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E. 3 0.4 0 (1 .19 7) MAX. 26 .40 (1 .03 9 ) 24 .40 (.9 61 ) 3 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 10 www.irf.com