IRG4BC10SD-LPBF

PD - 95780 IRG4BC10SD-SPbF IRG4BC10SD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak & TO-262 packages • Lead-Free C Standard Speed CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-channel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses D2Pak IRG4BC10SD-S Max. 600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +150 TO-262 IRG4BC10SD-L Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. A V W °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter RθJC RθJC RθCS RθJA RθJA Wt Min. Typ. ––– ––– 0.50 ––– ––– 2.0(0.07) Max. 3.3 7.0 ––– 80 40 ––– Units °C/W Junction-to-Case - IGBT ––– Junction-to-Case - Diode ––– Case-to-Sink, flat, greased surface ––– Junction-to-Ambient, typical socket mount … ––– Junction-to-Ambient (PCB Mount, steady state)† ––– Weight ––– g (oz) www.irf.com 1 08/27/04 IRG4BC10SD-S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltageƒ 600 — Temperature Coeff. of Breakdown Voltage — 0.64 Collector-to-Emitter Saturation Voltage — 1.58 — 2.05 — 1.68 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -9.5 Forward Transconductance„ 3.65 5.48 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.5 — 1.4 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 1.8 IC = 8.0A VGE = 15V — V IC = 14.0A See Fig. 2, 5 — IC = 8.0A, TJ = 150°C 6.0 VCE = V GE, IC = 250µA — mV/°C VCE = V GE, IC = 250µA — S VCE = 100V, IC =8.0A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC =4.0A See Fig. 13 1.7 IC =4.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. Max. Units 15 22 2.42 3.6 6.53 9.8 76 — 32 — 815 1200 720 1080 0.31 — 3.28 — 3.60 10.9 1.46 2.6 70 — 36 — 890 — 890 — 3.83 — 7.5 — 280 — 30 — 4.0 — 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 — 235 — Conditions IC = 8.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25°C IC = 8.0A, VCC = 480V VGE = 15V, RG = 100Ω Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 18 IC = 5.0A TJ = 150°C, See Fig. 10,11, 18 IC = 8.0A, VCC = 480V VGE = 15V, RG = 100Ω Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 ƒ = 1.0MHz TJ = 25°C See Fig. 14 IF =4.0A TJ = 125°C TJ = 25°C See Fig. TJ = 125°C 15 VR = 200V TJ = 25°C See Fig. 16 di/dt = 200A/µs TJ = 125°C TJ = 25°C See Fig. TJ = 125°C 17 nC ns mJ mJ ns mJ nH pF ns A nC A/µs Details of note  through „ are on the last page 2 www.irf.com IRG4BC10SD-S/LPbF 10.0 Duty cycle : 50% Tj = 125°C Tsink = 90°C Ta = 55°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 9.2W for Heatsink Mount Power Dissipation = 1.8W for typical PCB socket Mount 8.0 Load Current ( A ) 6.0 60% of rated voltage 4.0 Ideal diodes 2.0 0.0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 °C 10 T = 150 °C J I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 10 TJ = 150 °C TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 5µs PULSE WIDTH 6 8 10 12 1 0.5 V GE = 15V 80µs PULSE WIDTH 1.0 1.5 2.0 2.5 3.0 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC10SD-S/LPbF 16 3.00 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 16 A Maximum DC Collector Current(A) 12 2.50 8 2.00 IC = 8A 4 1.50 IC = 4A 0 25 50 75 100 125 150 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10SD-S/LPbF 500 400 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 8A C, Capacitance (pF) Cies 300 15 Coes 200 10 100 Cres 5 0 1 10 100 0 0 5 10 15 20 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.60 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 °C 3.55 I C = 8A 3.50 100 RG =100Ω Ohm VGE = 15V VCC = 480V IC = 16 A 10 IC = IC = 1 8A 4A 3.45 3.40 3.35 3.30 0 20 40 60 80 100 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG G Gate Resistance (Ohm) R , , Gate Resistance (Ω) TJ , Junction Temperature (° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC10SD-S/LPbF 15 Total Switching Losses (mJ) 9 I C , Collector Current (A) RG TJ VCC 12 VGE = 100 Ω 100 = 150 ° C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 6 3 0 0 4 8 12 16 20 SAFE OPERATING AREA 1 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 10 TJ = 150°C T = 125°C J J T = 25°C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Forward Voltage Drop V FM (V) Forward Voltage Drop -- V FM ( V ) 6 www.irf.com IRG4BC10SD-S/LPbF 50 14 VR = 200V TJ = 125°C TJ = 25°C 45 I F = 8.0A I F = 4.0A 12 I F = 8.0A 10 40 I F = 4.0A trr- (nC) Irr- ( A) 8 35 6 30 4 25 VR = 200V TJ = 125°C TJ = 25°C 20 100 1000 2 di f /dt - (A/µs) 0 100 di f /dt - (A/µs) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125°C TJ = 25°C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125°C TJ = 25°C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /µs) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/µs) 1000 100 100 A di f /dt - (A/µs) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, www.irf.com 7 IRG4BC10SD-S/LPbF Same type device as D.U.T. 80% of Vce 430µF D.U.T. Vge V C 90% 10% 90% td(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr tf t=5µs Eoff Ets = (E +Eoff ) on Eon Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = ∫ Ic dt trr id dt tx Vcc tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vpk Irr Vcc DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 ∫ t4 Erec = Vd idIc dt Vd dt t3 ∫ t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC10SD-S/LPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µF 100V Vc* D.U.T. RL = 0 - 480V 480V 4 X I C @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC10SD-S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S E MBLY LINE "L" Note: "P" in as sembly line position indicates "L ead-Free" INT ERNAT IONAL RECT IFIER L OGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L OR INT E RNAT IONAL RE CT IF IER LOGO AS SE MBLY LOT CODE PART NUMBE R F 530S DAT E CODE P = DE SIGNAT ES LE AD-FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEE K 02 A = AS SE MBLY S IT E CODE 10 www.irf.com IRG4BC10SD-S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBLE D ON WW 19, 1997 IN T HE AS S EMB LY LINE "C" Note: "P" in ass embly line position indicates "Lead-Free" INT ERNATIONAL RECT IF IER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTE RNAT IONAL RECTIFIER LOGO PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YE AR 7 = 1997 WEE K 19 A = AS S E MBLY S ITE CODE AS S E MBLY LOT CODE www.irf.com 11 IRG4BC10SD-S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) F EED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. … This only applies to TO-262 package. † This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 12 www.irf.com