IRG4BC10SD-S

PD - 94255 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak & TO-262 packages C IRG4BC10SD-S IRG4BC10SD-L Standard Speed CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-ch an nel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses D2Pak IRG4BC10SD-S Max. 600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +150 TO-262 IRG4BC10SD-L Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. A V W °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter RθJC RθJC RθCS RθJA RθJA Wt Min. Typ. ––– ––– 0.50 ––– ––– 2.0(0.07) Max. 3.3 7.0 ––– 80 40 ––– Units °C/W Junction-to-Case - IGBT ––– Junction-to-Case - Diode ––– Case-to-Sink, flat, greased surface ––– Junction-to-Ambient, typical socket mount U ––– Junction-to-Ambient (PCB Mount, steady state)V ––– Weight ––– g (oz) www.irf.com 1 06/12/01 IRG4BC10SD-S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — Temperature Coeff. of Breakdown Voltage — 0.64 Collector-to-Emitter Saturation Voltage — 1.58 — 2.05 — 1.68 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -9.5 Forward TransconductanceT 3.65 5.48 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.5 — 1.4 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 1.8 IC = 8.0A VGE = 15V — V IC = 14.0A See Fig. 2, 5 — IC = 8.0A, TJ = 150°C 6.0 VCE = V GE, IC = 250µA — mV/°C VCE = V GE, IC = 250µA — S VCE = 100V, IC =8.0A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC =4.0A See Fig. 13 1.7 IC =4.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. Max. Units 15 22 2.42 3.6 6.53 9.8 76 — 32 — 815 1200 720 1080 0.31 — 3.28 — 3.60 10.9 1.46 2.6 70 — 36 — 890 — 890 — 3.83 — 7.5 — 280 — 30 — 4.0 — 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 — 235 — Conditions IC = 8.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25°C IC = 8.0A, VCC = 480V VGE = 15V, RG = 100Ω Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 18 IC = 5.0A TJ = 150°C, See Fig. 10,11, 18 IC = 8.0A, VCC = 480V VGE = 15V, RG = 100Ω Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 ƒ = 1.0MHz TJ = 25°C See Fig. 14 IF =4.0A TJ = 125°C TJ = 25°C See Fig. TJ = 125°C 15 VR = 200V TJ = 25°C See Fig. 16 di/dt = 200A/µs TJ = 125°C TJ = 25°C See Fig. TJ = 125°C 17 nC ns mJ mJ ns mJ nH pF ns A nC A/µs Details of note Q through T are on the last page 2 www.irf.com IRG4BC10SD-S/L 10.0 Duty cycle : 50% Tj = 125°C Tsink = 90°C Ta = 55°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 9.2W for Heatsink Mount Power Dissipation = 1.8W for typical PCB socket Mount 8.0 Load Current ( A ) 6.0 60% of rated voltage 4.0 Ideal diodes 2.0 0.0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 °C  T = 150 °C  J I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 10 10 TJ = 150 °C  TJ = 25 °C  V = 50V  5µs PULSE WIDTH CC 5µs PULSE WIDTH 10 6 8 12 1 0.5 V = 15V  80µs PULSE WIDTH GE 1.0 1.5 2.0 2.5 3.0 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC10SD-S/L 16 3.00 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE Maximum DC Collector Current(A)  I C = 16 A 12 2.50 8 2.00  IC = 8 A 4 1.50  IC = 4 A 0 25 50 75 100 125 150 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10SD-S/L 500 400 C, Capacitance (pF) Cies  VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 8A 15 300 C oes 200 10 100 C res 5 0 1 10 100 0 0 5 10 15 20 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.60 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 3.55 I C = 8A 3.50  100  RG =100Ω Ohm VGE = 15V VCC = 480V  IC = 16 A 10  IC = 8 A  IC = 4 A 1 3.45 3.40 3.35 3.30 0 20 40 60 80 100 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG G Gate Resistance (Ohm) R , , Gate Resistance (Ω) TJ , Junction Temperature (° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC10SD-S/L 15 Total Switching Losses (mJ) 9 I C , Collector Current (A) 8 12 16 20 RG TJ VCC 12 VGE  = 100 Ω 100 = 150 ° C = 480V = 15V 100  VGE = 20V T J = 125 oC 10 6 3 0 0 4 SAFE OPERATING AREA 1 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 10 TJ = 150 ° C TJ = 125 ° C T = 25 ° C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F orward Voltage Drop V F ( V Forward V olta g e D rop -- V FMM V ) ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC10SD-S/L 50 14 VR = 20 0V T J = 1 25 ° C T J = 2 5 °C 45 I F = 8.0A I F = 4.0A 12 I F = 8.0A 10 40 I F = 4.0A trr- (nC) Irr- ( A) 8 35 6 30 4 25 VR = 2 00 V TJ = 1 2 5°C T J = 2 5 °C 20 100 1000 2 di f /dt - ( A/ µ s ) 0 100 1000 di f /dt - ( A/ µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 2 00 V T J = 1 25 ° C T J = 2 5 °C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 20 0V T J = 1 25 ° C T J = 2 5 °C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /µs) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - ( A/ µ s ) 1000 100 100 A 1000 di f /dt - ( A/ µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, www.irf.com 7 IRG4BC10SD-S/L Same ty pe device as D .U.T. 80% of Vce 430µF D .U .T. Vge VC 90% 10% 90% t d(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr Eon E ts = (Eon +Eoff ) tf t=5µs Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ Ic dt trr id d t tx V cc tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ Vd Ic dt t4 V d id d t t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC10SD-S/L V g G AT E SIG NA L DE VIC E U ND E R T E S T CU R RE NT D .U .T. VO L TA G E IN D.U .T. CU R RE NT IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µF 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X I C @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC10SD-S/L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.9 3 (.0 37 ) 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information A IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 10 www.irf.com IRG4BC10SD-S/L TO-262 Package Outline TO-262 Part Marking Information www.irf.com 11 IRG4BC10SD-S/L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.16 1 ) 3 .9 0 (.15 3 ) 1.60 (.06 3) 1.50 (.05 9) 0.3 68 (.01 45 ) 0.3 42 (.01 35 ) F E ED D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1.60 (.457 ) 1 1.40 (.449 ) 1 5.42 (.60 9) 1 5.22 (.60 1) 2 4.30 (.9 57 ) 2 3.90 (.9 41 ) TR L 10.90 (.42 9) 10.70 (.42 1) 1.75 (.0 69 ) 1.25 (.0 49 ) 1 6.10 (.6 3 4) 1 5.90 (.6 2 6) 4.72 (.1 36 ) 4.52 (.1 78 ) F E E D D IR E C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 33 0.00 (14.173) M A X. 60.00 (2.36 2) MIN . N OT ES : 1. C O MF OR MS TO EIA-418. 2. C O NTR O LLIN G DIM EN SIO N: M ILLIM ET ER. 3. D IM ENSIO N M EAS UR ED @ HU B. 4. IN CLU D ES F LAN G E D ISTO RT IO N @ O UT ER ED GE. 26.40 (1.0 39) 24.40 (.96 1) 30.40 (1.197) M AX. 4 3 Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) RVCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. U This only applies to TO-262 package. V This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/01 12 www.irf.com