IRG4BC10UD

PD 91677B IRG4BC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 600V VCE(on) typ. = 2.15V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous Generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package G @VGE = 15V, IC = 5.0A E n-cha nn el tf (typ.) = 140ns Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 8.5 5.0 34 34 4.0 16 ± 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. — — — — — Typ. — — 0.50 — 2 (0.07) Max. 3.3 7.0 — 80 — Units °C/W g (oz) www.irf.com 1 12/30/00 IRG4BC10UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 VCE(on) Collector-to-Emitter Saturation Voltage — 2.15 — 2.61 — 2.30 Gate Threshold Voltage 3.0 — VGE(th) ∆VGE(th) /∆TJ Temperature Coeff. of Threshold Voltage — -8.7 gfe Forward Transconductance T 2.8 4.2 ICES Zero Gate Voltage Collector Current — — — — V FM Diode Forward Voltage Drop — 1.5 — 1.4 IGES Gate-to-Emitter Leakage Current — — V(BR)CES Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 2.6 IC = 5.0A VGE = 15V See Fig. 2, 5 — V IC = 8.5A — IC = 5.0A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 5.0A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A See Fig. 13 1.7 IC = 4.0A, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Q rr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 15 2.6 5.8 40 16 87 140 0.14 0.12 0.26 38 18 95 250 0.45 7.5 270 21 3.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 22 IC = 5.0A 4.0 nC VCC = 400V See Fig. 8 8.7 VGE = 15V — TJ = 25°C — ns IC = 5.0A, VCC = 480V 130 VGE = 15V, RG = 100Ω 210 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 0.33 — TJ = 150°C, See Fig. 11, 18 — ns IC = 5.0A, VCC = 480V — VGE = 15V, RG = 100Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 42 ns TJ = 25°C See Fig. 57 TJ = 125°C 14 IF = 4.0A 5.2 A TJ = 25°C See Fig. 6.7 TJ = 125°C 15 VR = 200V 60 nC TJ = 25°C See Fig. 105 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 Details of note Q through T are on the last page 2 www.irf.com IRG4BC10UD 7 F o r b o th : 6 LOAD CURRENT (A) 5 D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 9.2 W 4 S q u a re w a v e : 6 0% of rate d volta ge I 3 2 Id e a l d io d e s 1 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 oC  10 TJ = 150 oC  I C , Collector-to-Emitter Current (A) 10 TJ = 150 o C  1 TJ = 25 o C  V = 50V  5µs PULSE WIDTH CC 5 6 7 8 9 10 11 12 13 14 0.1 1 V = 15V  20µs PULSE WIDTH GE 10 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC10UD 10 5.0 8 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE Maximum DC Collector Current(A) 4.0  I C = 10 A 6 3.0 4  I C = 5.0 A 5  I C = 2.5 A 2.0 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10UD 500 400 VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 5.0A 16 C, Capacitance (pF) 300 Cies  12 200 8 100 C oes C res 4 0 1 10 100 0 0 4 8 12 16 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.30 Total Switching Losses (mJ) Total Switching Losses (mJ)  V CC = 480V V GE = 15V TJ = 25 ° C I C = 5.0A 10  100 Ω RG = Ohm VGE = 15V VCC = 480V 1  IC = 10 A  IC = 5.0A 5A  IC = 2.5 A 0.25 0.1 0.20 50 60 70 80 90 100 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG RG , Gate Resistance (Ω) , Gate Resistance (Ohm) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC10UD 1.4 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ 1.2 VCC VGE  = 100Ω Ohm = 150 ° C = 480V = 15V 100  VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 10 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 10 TJ = 150 ° C TJ = 125 ° C T = 25 ° C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F orward V olta g e D rop -- V FMM V ) ) Forward Voltage Drop V F (( V 6 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.irf.com IRG4BC10UD 50 14 VR = 20 0V T J = 1 25 ° C T J = 2 5 °C 45 I F = 8.0A I F = 4.0A 12 I F = 8.0A 10 40 I F = 4.0A trr- (nC) Irr- ( A) 8 35 6 30 4 25 VR = 2 00 V TJ = 1 2 5°C T J = 2 5 °C 20 100 1000 2 di f /dt - ( A/ µ s ) 0 100 1000 di f /dt - ( A/ µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 2 00 V T J = 1 25 ° C T J = 2 5 °C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 20 0V T J = 1 25 ° C T J = 2 5 °C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /µs) Qrr- (nC) 120 I F = 4.0A I F = 4.0A 80 40 0 100 di f /dt - ( A/ µ s ) 1000 100 100 A 1000 di f /dt - ( A/ µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt, 7 IRG4BC10UD Same ty pe device as D .U.T. 90% Vge +Vge Vce 80% of Vce 430µF D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = ∫ t1 + 5 µ S Vce d VceicIc tdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIct dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC10UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R EN T D .U .T . V O L T A G E IN D .U .T . C U R R EN T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X I C @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC10UD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline and Dimensions — TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 3.78 (.149) 3.54 (.139) -A 6 .4 7 (.255) 6 .1 0 (.240) 1.15 (.0 45) M IN -B- 4.69 (.185) 4.20 (.165) 1.32 (.05 2) 1.22 (.04 8) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S ( IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 ( .1 60 ) 3.55 ( .1 40 ) LEAD 1234- A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 0.93 ( .037 ) 0.69 ( .027 ) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0 ) 2X 3X 3X 0.55 (.0 22) 0.46 (.0 18) 0 .3 6 (.0 1 4 ) 2.92 (.115 ) 2.64 (.104 ) CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com