IRG4BC15UD-L

PD - 95781 IRG4BC15UD-SPbF IRG4BC15UD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 600V Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits • Best Value for Appliance and Industrial Applications • High noise immune "Positive Only" gate driveNegative bias gate drive not necessary • For Low EMI designs- requires little or no snubbing • Single Package switch for bridge circuit applications • Compatible with high voltage Gate Driver IC's • Allows simpler gate drive n-channel D2Pak IRG4BC15UD-S TO-262 IRG4BC15UD-L Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 14 7.8 42 42 4.0 16 ± 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount … Junction-to-Ambient (PCB Mount, steady state)† Weight Min. ––– ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– ––– 2 (0.07) Max. 2.7 7.0 ––– 80 40 ––– Units °C/W g (oz) www.irf.com 1 08/27/04 IRG4BC15UD-S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltageƒ ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES Min. 600 ––– ––– ––– ––– Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ––– Forward Transconductance „ 4.1 Zero Gate Voltage Collector Current ––– ––– Diode Forward Voltage Drop ––– ––– Gate-to-Emitter Leakage Current ––– Typ. ––– 0.63 2.02 2.56 2.21 ––– -10 6.2 ––– ––– 1.5 1.4 ––– Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V/°C VGE = 0V, IC = 1.0mA 2.4 IC = 7.8A VGE = 15V ––– V IC = 14A ––– IC = 7.8A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 250µA ––– S VCE = 100V, IC = 7.8A 250 µA VGE = 0V, VCE = 600V 1400 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A 1.7 IC = 4.0A, TJ = 150°C ±100 nA VGE = ±20V VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 23 4.0 9.6 17 20 160 83 0.24 0.26 0.50 16 21 180 220 0.76 7.5 410 37 5.3 28 38 2.9 3.7 40 70 280 240 Max. Units Conditions 35 IC = 7.8A 6.0 nC VCC = 400V 14 VGE = 15V ––– TJ = 25°C ––– ns IC = 7.8A, VCC = 480V 240 VGE = 15V, R G = 75Ω 120 Energy losses include "tail" and ––– diode reverse recovery. ––– mJ 0.63 ––– TJ = 150°C, ––– ns IC = 7.8A, VCC = 480V ––– VGE = 15V, R G = 75Ω ––– Energy losses include "tail" and ––– mJ diode reverse recovery. ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V ––– ƒ = 1.0MHz 42 ns TJ = 25°C 57 TJ = 125°C IF = 4.0A 5.2 A TJ = 25°C 6.7 TJ = 125°C VR = 200V 60 nC TJ = 25°C 110 TJ = 125°C di/dt 200A/µs ––– A/µs TJ = 25°C ––– TJ = 125°C IRG4BC15UD-S/LPbF 12.00 Duty cycle : 50% Tj = 125°C Tsink = 90°C Ta = 55°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 11W for Heatsink Mount Power Dissipation = 1.8W for typical PCB socket Mount 10.00 Load Current ( A ) 8.00 60% of rated voltage 6.00 Ideal diodes 4.00 2.00 0.00 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) TJ = 150 °C 10 10 TJ = 150 °C 1 1 TJ = 25 °C TJ = 25 °C V GE = 15V 20µs PULSE WIDTH 1 10 0.1 0.1 0.1 5.0 V CC = 50V 5µs PULSE WIDTH 10.0 15.0 20.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRG4BC15UD-S/LPbF 14 4.0 VGE = 15V 80µs PULSE WIDTH 12 10 8 6 4 2 0 25 50 75 100 125 150 VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current(A) IC = 14A 3.0 IC = 7.8A 2.0 IC = 3.9A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 TC , Case Temperature ( ° C) T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRG4BC15UD-S/LPbF 800 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 7.8A 16 C, Capacitance (pF) 600 Cies 400 12 8 Coes 200 4 Cres 0 0 1 10 100 0 5 10 15 20 25 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.48 VCC = 480V VGE = 15V TJ = 25°C I C = 7.8A 0.46 10 RG = 75Ω VGE = 15V VCC = 480V IC = 14A Total Switching Losses (mJ) Total Switching Losses (mJ) 1 IC = 7.8A 0.44 IC = 3.9A 0.42 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance (Ω ) T J, Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature IRG4BC15UD-S/LPbF 100 2.0 RG = 75Ω TJ = 150°C VGE = 15V VGE = 20V TJ = 125° Total Switching Losses (mJ) 1.6 C, Capacitance(pF) VCC = 480V 1.2 SAFE OPERATING AREA 10 0.8 0.4 1 0.0 2 4 6 8 10 12 14 16 1 10 100 1000 IC, Collector Current (A) VDS, Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA 10 TJ = 150°C T = 125°C J J T = 25°C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current IRG4BC15UD-S/LPbF 50 14 VR = 200V TJ = 125°C TJ = 25°C 45 I F = 8.0A I F = 4.0A 12 I F = 8.0A 10 40 I F = 4.0A trr- (nC) Irr- ( A) 8 35 6 30 4 25 VR = 200V TJ = 125°C TJ = 25°C 20 100 1000 2 di f /dt - (A/µs) 0 100 di f /dt - (A/µs) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125°C TJ = 25°C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125°C TJ = 25°C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /µs) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/µs) 1000 100 100 A di f /dt - (A/µs) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, IRG4BC15UD-S/LPbF Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430µF D.U.T. Ic 10% Vce Ic 5% Ic td(off) tf 90% Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = ∫ t1+5µ S Vce ic dtdt Vce Ic t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = ∫ trr id dt Ic dt tx tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vcc Vpk Irr Vcc DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 ∫ t4 Erec = Vd idIc dt Vd dt t3 ∫ t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr IRG4BC15UD-S/LPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µF 100V Vc* D.U.T. RL = 0 - 480V 480V 4 X I C @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit IRG4BC15UD-S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H L OT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE "L " Note: "P" in assembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMB LY LOT CODE PART NUMB ER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L OR INT E RNAT IONAL RE CT IF IER LOGO AS SE MBLY LOT CODE PART NUMBE R F 530S DAT E CODE P = DE SIGNAT ES LE AD-FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEE K 02 A = AS SE MBLY S IT E CODE IRG4BC15UD-S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLE D ON WW 19, 1997 IN T HE AS S E MBLY LINE "C" Note: "P" in as sembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IF IER L OGO PART NUMBER AS S EMBLY L OT CODE DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT E RNAT IONAL RECT IF IER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DE S IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S E MBLY S IT E CODE IRG4BC15UD-S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957 ) 23.90 (.941 ) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature. ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 75Ω ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. … This only applies to TO-262 package. † This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04