IRG4BC20FD-S

PD -91783A IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-cha nn el Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs D 2 Pak Max. 600 16 9.0 64 64 8.0 60 ± 20 60 24 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient ( PCB Mounted,steady-state)* Weight Typ. ––– ––– ––– 1.44 Max. 2.1 3.5 80 ––– Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 4/24/2000 IRG4BC20FD-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 VCE(on) Collector-to-Emitter Saturation Voltage — 1.66 — 2.06 — 1.76 Gate Threshold Voltage 3.0 — VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance T 2.9 5.1 Zero Gate Voltage Collector Current — — ICES — — VFM Diode Forward Voltage Drop — 1.4 — 1.3 IGES Gate-to-Emitter Leakage Current — — V(BR)CES Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, I C = 1.0mA 2.0 IC = 9.0A VGE = 15V — V IC = 16A See Fig. 2, 5 — IC = 9.0A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 9.0A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. — — — — — — — — — — — — — — — — — — — — — Diode Peak Reverse Recovery Current — — Diode Reverse Recovery Charge — — Diode Peak Rate of Fall of Recovery — During tb — Typ. 27 4.2 9.9 43 20 240 150 0.25 0.64 0.89 41 22 320 290 1.35 7.5 540 37 7.0 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 9.0A 6.2 nC VCC = 400V See Fig. 8 15 VGE = 15V — TJ = 25°C — ns IC = 9.0A, VCC = 480V 360 VGE = 15V, RG = 50Ω 220 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 1.3 — TJ = 150°C, See Fig. 10, 11, 18 — ns IC = 9.0A, VCC = 480V — VGE = 15V, RG = 50Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. 90 TJ = 125°C 14 IF = 8.0A 5.0 A TJ = 25°C See Fig. 8.0 TJ = 125°C 15 VR = 200V 138 nC TJ = 25°C See Fig. 360 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 2 www.irf.com IRG4BC20FD-S 3.0 For both: Mounted on PCB LOAD CURRENT (A) 2.0 S q u a re w a v e : 6 0% of rate d volta ge D uty cy cle: 50% TJ = 125 ° C T s ink = 90 °°C 55 C G ate drive as specified P ow e r Dis sip ation = 1.75W 1.0 I Id e a l d io d e s 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 o C  TJ = 150 o C  10 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 o C  10 TJ = 25 oC  1 1 V = 15V  20µs PULSE WIDTH GE 10 1 5 6 7 8 9 V = 50V  5µs PULSE WIDTH CC 10 11 12 13 14 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC20FD-S 16 3.0 12 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  IC = 18 A Maximum DC Collector Current(A) 8 2.0  IC = 9.0 A 9A 4  IC = 4.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 0.50 0.20 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20FD-S 1000 800 VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 9.0A 16 C, Capacitance (pF) 600 Cies  12 400 8 200 C oes C res 4 0 1 10 100 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.90 Total Switching Losses (mJ) 0.86 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 0.88 I C = 9.0A  10  Ω RG = 50Ohm VGE = 15V VCC = 480V  IC = 18 A  IC = 9.0 A 9 1 0.84  IC = 4.5 A 0.82 0.80 0.78 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ω RG , Gate Resistance (Ohm) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20FD-S 3.0 2.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 2.5 VGE  = 50Ohm Ω = 150 ° C = 480V = 15V 100  VGE = 20V T J = 125 oC 1.5 10 1.0 0.5 0.0 0 4 8 12 16 SAFE OPERATING AREA 1 20 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10 TJ = 1 50 ° C TJ = 1 25 ° C TJ = 25 ° C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 F o rw a rd V o lta g e D ro p - V F M ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20FD-S 100 100 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 80 VR = 2 0 0 V TJ = 1 2 5 ° C TJ = 2 5 °C IF = 16 A t rr - (ns) 60 I F = 8 .0A I IR R M - (A ) I F = 1 6A 10 40 IF = 8 .0 A I F = 4.0 A I F = 4 .0 A 20 0 100 d i f /d t - ( A / µ s ) 1000 1 100 1000 di f /dt - ( A / µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 400 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 300 d i(re c )M /d t - (A /µ s ) Q R R - (n C ) I F = 16 A 200 I F = 4.0 A 1000 IF = 8 .0 A I F = 1 6A I F = 8 .0A 100 IF = 4.0 A 0 100 100 100 di f /dt - ( A / µ s ) 1000 1000 d i f /d t - ( A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC20FD-S Same ty pe device as D .U.T. 80% of Vce 430µF D .U .T. 90% Vge VC 90% 10% t d(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr Eon E ts = (Eon +Eoff ) tf t=5µs Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIct dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC20FD-S V g G AT E S IG NA L DE V ICE U ND E R T E S T CU R RE N T D.U .T . VO LT A G E IN D .U.T . CU R RE N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 100 0V 50V 600 0 µF 10 0V Vc * D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit Tape & Reel Information D2Pak TR R 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1.6 0 ( .0 6 3 ) 1.5 0 ( .0 5 9 ) 0 .3 6 8 ( .0 1 4 5 ) 0 .3 4 2 ( .0 1 3 5 ) F E E D D I RE C T IO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1 .6 0 ( .45 7 ) 1 1 .4 0 ( .44 9 ) 1 5.4 2 ( .6 0 9 ) 1 5.2 2 ( .6 0 1 ) 2 4 .3 0 ( .95 7 ) 2 3 .9 0 ( .94 1 ) TRL 1 0 .9 0 ( .42 9 ) 1 0 .7 0 ( .42 1 ) 1.7 5 ( .0 6 9 ) 1.2 5 ( .0 4 9 ) 1 6 .1 0 ( .63 4 ) 1 5 .9 0 ( .62 6 ) 4 .7 2 ( .1 3 6 ) 4 .5 2 ( .1 7 8 ) F E E D D IR E C T I ON 1 3.50 ( .53 2 ) 1 2.80 ( .50 4 ) 2 7.4 0 ( 1.0 7 9 ) 2 3.9 0 ( .94 1 ) 4 3 3 0.00 ( 14 .1 73 ) M AX. 6 0.00 ( 2 .3 62 ) M IN . N O TE S : 1. C O MF O R M S T O EIA- 41 8. 2. C O N TR O LL IN G D IM EN SIO N : M IL LIM ET ER . 3. D IM EN S IO N M EAS UR ED @ H U B. 4. IN C L U D E S FL AN G E D IST O R T IO N @ O U T ER E D G E. 26 .4 0 ( 1 .03 9 ) 24 .4 0 ( .9 61 ) 3 3 0.4 0 ( 1.19 7 ) M A X. 4 www.irf.com 9 IRG4BC20FD-S Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Notes: D2Pak Package Outline 1 0 .5 4 ( .4 1 5 ) 1 0 .2 9 ( .4 0 5 ) 1 .4 0 ( .0 5 5 ) M A X. -A2 4 .6 9 ( .1 8 5 ) 4 .2 0 ( .1 6 5 ) -B 1 .3 2 ( .0 5 2 ) 1 .2 2 ( .0 4 8 ) 6 .4 7 ( .2 5 5 ) 6 .1 8 ( .2 4 3 ) 1 5 .4 9 ( .6 1 0 ) 1 4 .7 3 ( .5 8 0 ) 5 .2 8 ( .2 0 8 ) 4 .7 8 ( .1 8 8 ) 1 .4 0 ( .0 5 5 ) 1 .1 4 ( .0 4 5 ) 5 .0 8 ( .2 0 0 ) 1 .3 9 ( .0 5 5 ) 1 .1 4 ( .0 4 5 ) 2 .7 9 ( .1 1 0 ) 2 .2 9 ( .0 9 0 ) 2 .6 1 ( .1 0 3 ) 2 .3 2 ( .0 9 1 ) 8 .8 9 ( .3 5 0 ) R E F. 1 0 .1 6 ( .4 0 0 ) REF . 1 .7 8 ( .0 7 0 ) 1 .2 7 ( .0 5 0 ) 1 3 3X 0 .9 3 ( .0 3 7 ) 3X 0 .6 9 ( .0 2 7 ) 0 .2 5 ( .0 1 0 ) M BAM 0 .5 5 ( .0 2 2 ) 0 .4 6 ( .0 1 8 ) M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .4 3 ( .4 5 0 ) NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S . L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OURCE 8 .8 9 ( .3 5 0 ) 1 7 .7 8 ( .7 0 0 ) 3 .8 1 ( .1 5 0 ) 2 .0 8 ( .0 8 2 ) 2X 2 .5 4 ( .1 0 0 ) 2X IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com