IRG4BC20FD

PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-cha nn el Benefits • Generation -4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 16 9.0 64 64 7.0 32 ± 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 2 (0.07) Max. 2.1 3.5 ––– 80 ––– Units °C/W g (oz) www.irf.com 1 7/11/2000 IRG4BC20FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 VCE(on) Collector-to-Emitter Saturation Voltage — 1.66 — 2.06 — 1.76 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance T 2.9 5.1 ICES Zero Gate Voltage Collector Current — — — — V FM Diode Forward Voltage Drop — 1.4 — 1.3 IGES Gate-to-Emitter Leakage Current — — V(BR)CES Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 2.0 IC = 9.0A V GE = 15V — V IC = 16A See Fig. 2, 5 — IC = 9.0A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 9.0A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Q rr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 27 4.2 9.9 43 20 240 150 0.25 0.64 0.89 41 22 320 290 1.35 7.5 540 37 7.0 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 9.0A 6.2 nC VCC = 400V See Fig. 8 15 VGE = 15V — TJ = 25°C — ns IC = 9.0A, VCC = 480V 360 VGE = 15V, RG = 50 Ω 220 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 1.3 — TJ = 150°C, See Fig. 11, 18 — ns IC = 9.0A, VCC = 480V — VGE = 15V, RG = 50 Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. 90 TJ = 125°C 14 IF = 8.0A 5.0 A TJ = 25°C See Fig. 8.0 TJ = 125°C 15 VR = 200V 138 nC TJ = 25°C See Fig. 360 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 2 www.irf.com IRG4BC20FD 14 For both: 12 LOAD CURRENT (A) 10 D uty cy cle: 50% TJ = 125 ° C T s ink = 90 ° C G ate drive as specified P ow e r Dis sip ation = 13 W S q u a re w a v e : 6 0% of rate d volta ge I 8 6 4 Id e a l d io d e s 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 o C  TJ = 150 o C  10 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 o C  10 TJ = 25 oC  1 1 V = 15V  20µs PULSE WIDTH GE 10 1 5 6 7 8 9 V = 50V  5µs PULSE WIDTH CC 10 11 12 13 14 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20FD 16 3.0 12 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  IC = 18 A Maximum DC Collector Current(A) 8 2.0  IC = 9.0 A 9A 4  IC = 4.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 0.50 0.20 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20FD 1000 800 VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 9.0A 16 C, Capacitance (pF) 600 Cies  12 400 8 200 C oes C res 4 0 1 10 100 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.90 Total Switching Losses (mJ) 0.86 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 0.88 I C = 9.0A  10  Ω RG = 50Ohm VGE = 15V VCC = 480V  IC = 18 A  IC = 9.0 A 9 1 0.84  IC = 4.5 A 0.82 0.80 0.78 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ω RG , Gate Resistance (Ohm) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20FD 3.0 2.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 2.5 VGE  = 50Ohm Ω = 150 ° C = 480V = 15V 100  VGE = 20V T J = 125 oC 1.5 10 1.0 0.5 0.0 0 4 8 12 16 SAFE OPERATING AREA 1 20 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10 TJ = 1 50 ° C TJ = 1 25 ° C TJ = 25 ° C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 F o rw a rd V o lta g e D ro p - V F M ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20FD 100 100 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 80 VR = 2 0 0 V TJ = 1 2 5 ° C TJ = 2 5 °C IF = 16 A t rr - (ns) 60 I F = 8 .0A I IR R M - (A ) I F = 1 6A 10 40 IF = 8 .0 A I F = 4.0 A I F = 4 .0 A 20 0 100 d i f /d t - ( A / µ s ) 1000 1 100 1000 di f /dt - ( A / µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 400 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 300 d i(re c )M /d t - (A /µ s ) Q R R - (n C ) I F = 16 A 200 I F = 4.0 A 1000 IF = 8 .0 A I F = 1 6A I F = 8 .0A 100 IF = 4.0 A 0 100 100 100 di f /dt - ( A / µ s ) 1000 1000 d i f /d t - ( A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC20FD Same ty pe device as D .U.T. 90% Vge +Vge Vce 80% of Vce 430µF D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = ∫ t1 + 5 µ S Vce d VceicIc tdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = t1 ∫ t4 V d idIct dt Vd d t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC20FD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC20FD Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Notes: Case Outline — TO-220AB 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN -B - 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S ( IN C H E S ) . 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 ( .160 ) 3.55 ( .140 ) LEAD 1234- A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 0.93 ( .037 ) 0.69 ( .027 ) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X 3X 3X 0.55 (.022) 0.46 (.018) 0 .3 6 (.01 4 ) 2.92 (.115) 2.64 (.104) CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd ( In c he s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00 10 www.irf.com