IRG4BC20SD-S

PD -91794 IRG4BC20SD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 10A n-cha nnel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses D 2 Pak Max. 600 19 10 38 38 7.0 38 ± 20 60 24 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Units V A V W °C Thermal Resistance Parameter RqJC RqJC RqJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient ( PCB Mounted,steady-state)* Weight Typ. ––– ––– ––– 1.44 Max. 2.1 3.5 80 ––– Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 IRG4BC20SD-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES DV(BR)CES/DTJ VCE(on) VGE(th) DVGE(th)/DTJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltageƒ 600 — Temperature Coeff. of Breakdown Voltage — 0.75 Collector-to-Emitter Saturation Voltage — 1.40 — 1.85 — 1.44 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -11 Forward Transconductance „ 2.0 5.8 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.4 — 1.3 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 1.6 IC = 10A VGE = 15V — V IC = 19A See Fig. 2, 5 — IC = 10A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 10A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 27 4.3 10 62 32 690 480 0.32 2.58 2.90 64 35 980 800 4.33 7.5 550 39 7.1 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 10A 6.5 nC VCC = 400V See Fig. 8 15 VGE = 15V — TJ = 25°C — ns IC = 10A, VCC = 480V 1040 VGE = 15V, RG = 50W 730 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11,18 4.5 — TJ = 150°C, See Fig. 10,11, 18 — ns IC = 10A, VCC = 480V — VGE = 15V, RG = 50W — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. 90 TJ = 125°C 14 IF = 8.0A 5.0 A TJ = 25°C See Fig. 8.0 TJ = 125°C 15 VR = 200V 138 nC TJ = 25°C See Fig. 360 TJ = 125°C 16 di/dt = 200Aµs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 2 www.irf.com IRG4BC20SD-S 3.0 F or b oth: LOAD CURRENT (A) D uty c y c le : 50 % T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified 2.0 S q u a re w a v e : 60% of rated voltage P ow er D is s ipation = 1.7W 1.0 I Id e a l d io d es 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) TJ = 150 o C 10 10 TJ = 150 ° C TJ = 25 ° C V GE = 15V 20µs PULSE WIDTH 1.0 2.0 3.0 4.0 TJ = 25 o C 1 0.0 1 5 6 7 8 V CC = 50V 5µs PULSE WIDTH 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20SD-S 20 3.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 20 A Maximum DC Collector Current(A) 15 10 2.0 5 IC = 10 A IC = 5.0A 5A 1.0 -60 -40 -20 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20SD-S 1000 800 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 10A 16 C, Capacitance (pF) Cies 600 12 400 8 Coes 200 4 Cres 0 1 10 100 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C I C = 10A 100 RG = 50W VGE = 15V VCC = 480V IC = 20 A 2.9 10 IC = 10 A IC = 1 5A 2.8 2.7 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RGR, Gate Resistance (W ) G, Gate Resistance TJ , Junction Temperature (° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20SD-S 14 10 8 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ 12 VCC VGE = 50W = 150 ° C = 480V = 15V 100 VGE = 20V T J = 125 o C 10 6 4 2 0 0 4 8 12 16 20 SAFE OPERATING AREA 1 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20SD-S 100 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 80 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C IF = 16A I F = 8.0A I IR R M - (A ) t rr - (n s) 60 I F = 16A 10 40 I F = 8.0 A I F = 4.0A I F = 4.0A 20 0 100 d i f /d t - (A /µ s) 1000 1 100 1000 d i f /d t - (A /µ s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 400 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 300 d i(re c)M /d t - (A /µ s) Q R R - (n C ) I F = 16A 200 I F = 4.0A 1000 I F = 8.0 A I F = 16A I F = 8.0A 100 IF = 4.0A 0 100 100 100 d i f /d t - (A /µ s) 1000 1000 d i f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC20SD-S Same t y pe device as D .U.T. 80% of Vce 430µF D .U .T. 90% Vge VC 10% 90% t d(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr tf t=5µs E on E ts = (Eon +Eoff ) Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = ∫ trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 ∫ E rec = ∫ t4 V d idIc dt Vd dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC20SD-S V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µ F 100 V Vc* D.U.T. R L= 0 - 480V 480V 2 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC20SD-S Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 50W (figure 19) ƒ Pulse width £ 80µs; duty factor £ 0.1%. „ Pulse width 5.0µs, single shot. D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 10.16 (.400) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.450) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG NM E N TS 1 - G A TE 2 - D R A IN 3 - S O U RC E 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/98 10 www.irf.com