IRG4BC20U

PD - 91448D IRG4BC20U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 13 6.5 52 52 ± 20 5.0 60 24 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.50 ––– 2.0 (0.07) Max. 2.1 ––– 80 ––– Units °C/W g (oz) www.irf.com 4/17/2000 1 IRG4BC20U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.69 — 1.85 VCE(ON) Collector-to-Emitter Saturation Voltage — 2.27 — 1.87 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance U 1.4 4.3 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA 2.1 IC = 6.5A VGE = 15V — IC = 13A See Fig.2, 5 V — IC = 6.5A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 6.5A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 27 41 IC = 6.5A 4.5 6.8 nC VCC = 400V See Fig. 8 10 16 VGE = 15V 21 — 13 — TJ = 25°C ns 86 130 IC = 6.5A, VCC = 480V 120 180 VGE = 15V, RG = 50 Ω 0.10 — Energy losses include "tail" 0.12 — mJ See Fig. 10, 11, 13, 14 0.22 0.4 20 — TJ = 150°C, 14 — IC = 6.5A, VCC = 480V ns 190 — VGE = 15V, RG = 50 Ω 140 — Energy losses include "tail" 0.42 — mJ See Fig. 13, 14 7.5 — nH Measured 5mm from package 530 — VGE = 0V 39 — pF VCC = 30V See Fig. 7 7.4 — ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC20U 25 F o r b o th : T ria n g u la r w a ve : I 20 D uty c yc le: 50% T J = 125 ° C T s in k = 90 ° C G ate drive as spec ifie d P o w e r D is si p a tio n = 1 3 W Load Current ( A ) C la mp vo lta g e : 8 0 % o f ra te d 15 S q u a re w a ve : 6 0 % o f ra te d v o lta g e 10 I 5 Id ea l d io de s 0 0.1 1 10 A 100 f, Freq uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 100 I C , Collector-to-Emitter Current (A) T J = 25 ° C T J = 150 ° C 10 IC , C ollecto r-to-Em itter C urrent (A ) TJ = 1 5 0 ° C 10 TJ = 2 5 ° C 1 1 0.1 0.1 1 V G E = 15V 20µs PULSE WIDTH 10 0.1 4 6 8 V CC = 10V 5 µ s P U L S E W ID T H 10 A 12 VC E , Collector-to-Emitter Volta g e (V) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com A Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20U 14 M aximum D C Collector Current (A ) 12 V C E , C o llector-to-Em itter Voltage (V) V G E = 15 V 2.6 VGE = 15V 8 0 µ s P U L S E W ID T H IC = 1 3 A 10 2.2 8 1.8 6 I C = 6 .5 A 4 1.4 I C = 3 .3 A 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 T C , C ase Tem perature ( ° C) T J , Ju n c tio n T e m p e ra tu re ( ° C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 Therm al Response (Z thJ C ) 1 D = 0.50 0 .2 0 0 .10 0.0 5 PD M 0 .1 0.0 2 0 .01 t S IN G LE P U LS E (T H ER M AL R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20U 1000 C, Ca pac itanc e (p F) 800 V G E , G ate -to -E m itter V olta g e (V ) A V GE = C ie s = C re s = C oes = 0V, f = 1MHz C g e + C g c , C ce S H O R TE D C gc C ce + C gc 20 VCE = 400V I C = 6 .5 A 16 C ie s 600 12 C oes 400 8 200 C re s 4 0 1 10 0 0 5 10 15 20 25 A 30 100 V C E , C o lle cto r-to -E m itte r V o lta g e (V ) Q g , To ta l G a te C h a r g e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.23 T otal S witch ing Lo ss e s (m J ) T otal S witch ing L os se s (m J ) VCC VGE TJ IC = 480V = 15V = 2 5 °C = 6 .5 A 1 IC = 1 3 A I C = 6 .5 A 0.22 I C = 3 .3 A 0.1 0.21 0.20 0 10 20 30 40 50 A 60 0.01 RG = 50 Ω V GE = 15V V CC = 480V -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G a te R e s ista n ce ( Ω ) TJ , Ju n c tio n T e m p e ra tu re ( ° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20U 1.0 0.8 I C , C ollecto r-to -Em itter Cu rrent (A) T ota l S witch in g Los se s (m J) RG TJ V CC V GE = 50 Ω = 1 5 0 °C = 480V = 15V 1000 VG E E 2 0V G= T J = 12 5 ° C 100 0.6 S A FE O P E R A TIN G A R E A 10 0.4 1 0.2 0.0 0 2 4 6 8 10 12 14 A 0 .1 1 10 100 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC20U L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4BC20U Case Outline and Dimensions — TO-220AB 3X 2. 0.55 (.022) 0.46 (.018) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com