IRG4BC20UD-S

PD- 94077 IRG4BC20UD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A N-channel Benefits • Generation 4 IGBTs offers highest efficiencies available • Optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 13 6.5 52 52 7.0 52 ± 20 60 24 -55 to +150 °C 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.5 ––– 1.44 Max. 2.1 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 1/12/01 IRG4BC20UD-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– VCE(on) Collector-to-Emitter Saturation Voltage ––– ––– ––– VGE(th) Gate Threshold Voltage 3.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– gfe Forward Transconductance „ 1.4 ICES Zero Gate Voltage Collector Current ––– ––– VFM Diode Forward Voltage Drop ––– ––– IGES Gate-to-Emitter Leakage Current ––– Typ. Max. Units ––– ––– V 0.69 ––– V/°C 1.85 2.1 2.27 ––– V 1.87 ––– ––– 6.0 -11 ––– mV/°C 4.3 ––– S ––– 250 µA ––– 1700 1.4 1.7 V 1.3 1.6 ––– ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 6.5A VGE = 15V IC = 13A See Fig. 2, 5 IC = 6.5A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 6.5A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 8.0A See Fig. 13 IC = 8.0A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 27 4.5 10 39 15 93 110 0.16 0.13 0.29 38 17 100 220 0.49 7.5 530 39 7.4 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 41 IC = 6.5A 6.8 nC VCC = 400V See Fig. 8 16 VGE = 15V ––– TJ = 25°C ––– ns IC = 6.5A, VCC = 480V 140 VGE = 15V, RG = 50Ω 170 Energy losses include "tail" and ––– diode reverse recovery. ––– mJ See Fig. 9, 10, 11, 18 0.3 ––– TJ = 150°C, See Fig. 9, 10, 11, 18 ––– ns IC = 6.5A, VCC = 480V ––– VGE = 15V, RG = 50Ω ––– Energy losses include "tail" and ––– mJ diode reverse recovery. ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. 90 TJ = 125°C 14 IF = 8.0A 5.0 A TJ = 25°C See Fig. 8.0 TJ = 125°C 15 VR = 200V 138 nC TJ = 25°C See Fig. 360 TJ = 125°C 16 di/dt 200A/µs ––– A/µs TJ = 25°C See Fig. ––– TJ = 125°C 17 2 www.irf.com IRG4BC20UD-S 12 D u ty c y c le : 5 0 % T J = 1 2 5 °C T s in k = 9 0 °C G a te d riv e a s s p e c ifie d T u rn -o n los s e s in c lu d e e ffe c ts o f re v e rs e r e c o v e ry P ow er Diss ip ation = 13W 10 L oa d C u rre n t (A ) 8 6 6 0% o f ra te d v oltag e 4 2 0 0.1 1 10 A 100 f, F re q u e n c y ( k H z ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 T J = 25°C T J = 150°C 10 I C , C ollec tor-to-E m itte r C u rre nt (A ) I C , Collector-to-Emitter Current (A) 10 TJ = 1 5 0°C TJ = 25 °C 1 1 0.1 0.1 1 V G E = 15V 20µs PULSE WIDTH 10 0.1 4 6 8 V C C = 10 V 5 µs P U L S E W IDTH 10 A 12 VC E , Collector-to-Emitter Volta g e (V) VG E , Ga te -to-Em itter Volta g e (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com A 3 IRG4BC20UD-S 14 M aximum D C Collector Current (A ) 12 V C E , C ollector-to-E m itter V oltag e (V) V G E = 15 V 2.6 V G E = 1 5V 8 0 µs P U L S E W ID TH I C = 1 3A 2.2 10 8 1.8 I C = 6 .5A 6 4 1.4 I C = 3.3 A 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 T C , C ase Tem perature (°C) T J , J u n c tio n Te m p e ra tu re ( °C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Therm al Response (Z thJ C ) 1 D = 0.50 0 .2 0 0 .10 0.0 5 PD M 0 .1 0.0 2 0 .01 t S IN G LE P U LS E (T H ER M AL R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20UD-S 1000 V G E , G a te -to -E m itte r V o lta g e (V ) A C, Ca pac itanc e (p F) 800 V GE = C ie s = C re s = C oes = 0V , f = 1M H z C g e + C g c , C ce S H O R TE D C gc C ce + C g c 20 VCE = 400V I C = 6 .5 A 16 C ie s 600 12 C oes 400 8 200 C re s 4 0 1 10 0 0 5 10 15 20 25 A 30 100 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , T o ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.32 Total Switching Losses (m J) 0.31 Total S witching Los se s (m J) V CC VGE TJ IC = 480V = 15V = 25 °C = 6 .5A 10 R G = 50 Ω V GE = 15V V CC = 4 8 0 V IC = 1 3 A 1 I C = 6 .5 A 0.30 I C = 3 .3 A 0.29 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G a te R e sista n c e ( Ω) TJ , J u n ctio n T e m p e ra tu re ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20UD-S 1.2 0.9 I C , C ollecto r-to -Em itter Cu rrent (A) Total Switc hing Losses (mJ ) RG TJ V CC V GE = 50 Ω = 1 5 0 °C = 480V = 15V 1000 VG E E 2 0V G= T J = 12 5 °C 100 S A FE O P E R A TIN G A R E A 10 0.6 0.3 1 0.0 0 2 4 6 8 10 12 A 14 0 .1 1 10 100 1000 I C , C o lle cto r-to -E m itte r C u rre n t ( A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10 TJ = 1 50 °C TJ = 1 25 °C TJ = 25 °C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 F o rw a rd V o lta g e D ro p - V F M ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20UD-S 100 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 80 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C IF = 16 A t rr - (ns) 60 I F = 8 .0A I IR R M - (A ) I F = 1 6A 10 40 IF = 8 .0 A I F = 4.0 A I F = 4 .0 A 20 0 100 d i f /d t - ( A / µ s ) 1000 1 100 1000 di f /dt - ( A / µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 400 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 300 di(rec)M/dt - (A /µ s) Q R R - (nC ) I F = 16 A 200 I F = 4 .0A 1000 I F = 8.0 A I F = 16 A I F = 8 .0A 100 IF = 4.0 A 0 100 100 100 di f /dt - ( A / µ s ) 1000 1000 di f /dt - ( A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC20UD-S Same ty pe device as D .U.T. 90% 80% of Vce 430µF D .U .T. Vge VC 10% 90% td(off) 10% IC 5% t d(on) tr tf t=5µs E on E ts = (Eon +Eoff ) E off Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d id d t t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC20UD-S V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC20UD-S D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 10 www.irf.com IRG4BC20UD-S D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.16 1 ) 3 .9 0 (.15 3 ) 1.60 (.06 3) 1.50 (.05 9) 0.3 68 (.01 45 ) 0.3 42 (.01 35 ) F E ED D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1.60 (.457 ) 1 1.40 (.449 ) 1 5.42 (.60 9) 1 5.22 (.60 1) 2 4.30 (.9 57 ) 2 3.90 (.9 41 ) TR L 10.90 (.42 9) 10.70 (.42 1) 1.75 (.0 69 ) 1.25 (.0 49 ) 1 6.10 (.6 3 4) 1 5.90 (.6 2 6) 4.72 (.1 36 ) 4.52 (.1 78 ) F E E D D IR E C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 33 0.00 (14.173) M A X. 60.00 (2.36 2) MIN . N OT ES : 1. C O MF OR MS TO EIA-418. 2. C O NTR O LLIN G DIM EN SIO N: M ILLIM ET ER. 3. D IM ENSIO N M EAS UR ED @ HU B. 4. IN CLU D ES F LAN G E D ISTO RT IO N @ O UT ER ED GE. 26.40 (1.0 39) 24.40 (.96 1) 30.40 (1.197) M AX. 4 3 Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (Figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (Figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/01 www.irf.com 11