IRG4BC20UD

PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-cha nn el Benefits • Generation -4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 13 6.5 52 52 7.0 52 ± 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.50 ----2 (0.07) Max. 2.1 3.5 -----80 ------ Units °C/W g (oz) www.irf.com 1 3/21/2000 IRG4BC20UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance T 1.4 ICES Zero Gate Voltage Collector Current ------VFM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.69 ---- V/°C 1.85 2.1 2.27 ---V 1.87 ------- 6.0 -11 ---- mV/°C 4.3 ---S ---- 250 µA ---- 1700 1.4 1.7 V 1.3 1.6 ---- ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 6.5A VGE = 15V IC = 13A See Fig. 2, 5 IC = 6.5A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 6.5A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 8.0A See Fig. 13 IC = 8.0A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. Max. Units Conditions 27 41 IC = 6.5A 4.5 6.8 nC VCC = 400V See Fig. 8 10 16 VGE = 15V 39 ---TJ = 25°C 15 ---ns IC = 6.5A, VCC = 480V 93 140 VGE = 15V, RG = 50Ω 110 170 Energy losses include "tail" and 0.16 ---diode reverse recovery. 0.13 ---mJ See Fig. 9, 10, 11, 18 0.29 0.3 38 ---TJ = 150°C, See Fig. 9, 10, 11, 18 17 ---ns IC = 6.5A, VCC = 480V 100 ---VGE = 15V, RG = 50Ω 220 ---Energy losses include "tail" and 0.49 ---mJ diode reverse recovery. 7.5 ---nH Measured 5mm from package 530 ---VGE = 0V 39 ---pF VCC = 30V See Fig. 7 7.4 ---ƒ = 1.0MHz 37 55 ns TJ = 25°C See Fig. 55 90 TJ = 125°C 14 IF = 8.0A 3.5 5.0 A TJ = 25°C See Fig. 4.5 8.0 TJ = 125°C 15 VR = 200V 65 138 nC TJ = 25°C See Fig. 124 360 TJ = 125°C 16 di/dt 200A/µs 240 ---A/µs TJ = 25°C See Fig. 210 ---TJ = 125°C 17 2 www.irf.com IRG4BC20UD 12 D u ty c y c le : 5 0 % TJ = 1 2 5 °C T s in k = 9 0 ° C G a te d riv e a s s p e c ifie d T u rn -o n los s e s in c lu d e e ffe c ts o f re v e rs e r e c o v e ry P ow er Diss ip ation = 13W 10 L oa d C u rre n t (A ) 8 6 6 0% o f ra te d v oltag e 4 2 0 0.1 1 10 A 100 f, F re q u e n c y ( k H z ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 T J = 25 ° C T J = 150 ° C 10 I C , C ollec tor-to-E m itte r C u rre nt (A ) I C , Collector-to-Emitter Current (A) 10 TJ = 1 5 0 ° C TJ = 25 ° C 1 1 0.1 0.1 1 V G E = 15V 20µs PULSE WIDTH 10 0.1 4 6 8 V C C = 10 V 5 µs P U L S E W IDTH 10 A 12 VC E , Collector-to-Emitter Volta g e (V) VG E , Ga te -to-Em itter Volta g e (V) Fig. 2 - Typical Output Characteristics www.irf.com A Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20UD 14 M aximum D C Collector Current (A ) 12 V C E , C ollector-to-E m itter V oltag e (V) V G E = 15 V 2.6 V G E = 1 5V 8 0 µs P U L S E W ID TH I C = 1 3A 2.2 10 8 1.8 I C = 6 .5A 6 4 1.4 I C = 3.3 A 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 T C , C ase Tem perature ( ° C) T J , J u n c tio n Te m p e ra tu re ( ° C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Therm al Response (Z thJ C ) 1 D = 0.50 0 .2 0 0 .10 0.0 5 PD M 0 .1 0.0 2 0 .01 t S IN G LE P U LS E (T H ER M AL R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20UD 1000 V G E , G a te -to -E m itte r V o lta g e (V ) A C, Ca pac itanc e (p F) 800 V GE = C ie s = C re s = C oes = 0V , f = 1M H z C g e + C g c , C ce S H O R TE D C gc C ce + C g c 20 VCE = 400V I C = 6 .5 A 16 C ie s 600 12 C oes 400 8 200 C re s 4 0 1 10 0 0 5 10 15 20 25 A 30 100 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , T o ta l G a te C h a r g e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.32 Total Switching Losses (m J) 0.31 Total S witching Los se s (m J) V CC VGE TJ IC = 480V = 15V = 25 ° C = 6 .5A 10 R G = 50 Ω V GE = 15V V CC = 4 8 0 V IC = 1 3 A 1 I C = 6 .5 A 0.30 I C = 3 .3 A 0.29 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G a te R e sista n c e ( Ω) TJ , J u n ctio n T e m p e ra tu re ( ° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20UD 1.2 0.9 I C , C ollecto r-to -Em itter Cu rrent (A) Total Switc hing Losses (mJ ) RG TJ V CC V GE = 50 Ω = 1 5 0 °C = 480V = 15V 1000 VG E E 2 0V G= T J = 12 5 ° C 100 S A FE O P E R A TIN G A R E A 10 0.6 0.3 1 0.0 0 2 4 6 8 10 12 A 14 0 .1 1 10 100 1000 I C , C o lle cto r-to -E m itte r C u rre n t ( A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10 TJ = 1 50 ° C TJ = 1 25 ° C TJ = 25 ° C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 F o rw a rd V o lta g e D ro p - V F M ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20UD 100 100 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 80 VR = 2 0 0 V TJ = 1 2 5 ° C TJ = 2 5 °C IF = 16 A t rr - (ns) 60 I F = 8 .0A I IR R M - (A ) I F = 1 6A 10 40 IF = 8 .0 A I F = 4.0 A I F = 4 .0 A 20 0 100 d i f /d t - ( A / µ s ) 1000 1 100 1000 di f /dt - ( A / µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 400 VR = 2 0 0 V TJ = 1 2 5 ° C TJ = 2 5 °C 300 di(rec)M/dt - (A /µ s) Q R R - (nC ) I F = 16 A 200 I F = 4 .0A 1000 I F = 8.0 A I F = 16 A I F = 8 .0A 100 IF = 4.0 A 0 100 100 100 di f /dt - ( A / µ s ) 1000 1000 di f /dt - ( A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC20UD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430µF D .U .T. 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = t1 ∫ t4 V d id d t t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC20UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC20UD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-220AB 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN -B - 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S ( IN C H E S ) . 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 ( .160 ) 3.55 ( .140 ) LEAD 1234- A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 0.93 ( .037 ) 0.69 ( .027 ) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X 3X 3X 0.55 (.022) 0.46 (.018) 0 .3 6 (.01 4 ) 2.92 (.115) 2.64 (.104) CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com