IRG4BC20W

PD 91652B IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.5A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 13 6.5 52 52 ± 20 200 60 24 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.5 ––– 2.0 (0.07) Max. 2.1 ––– 80 ––– Units °C/W g (oz) www.irf.com 1 12/30/00 IRG4BC20W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V Temperature Coeff. of Breakdown Voltage — 0.48 — V/°C — 2.16 2.6 Collector-to-Emitter Saturation Voltage — 2.55 — V — 2.05 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -8.8 — mV/°C Forward Transconductance U 5.5 8.3 — S — — 250 Zero Gate Voltage Collector Current µA — — 2.0 — — 1000 Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 1.0mA IC = 6.5A VGE = 15V IC = 13A See Fig.2, 5 IC = 6.5A , TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100 V, IC = 6.5A VGE = 0V, VCE = 600V VGE = 0V, VCE = 10V, TJ = 25°C VGE = 0V, VCE = 600V, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 26 38 IC = 6.5A 3.7 5.5 nC VCC = 400V See Fig.8 10 15 VGE = 15V 22 — 14 — TJ = 25°C ns 110 160 IC = 6.5A, VCC = 480V 64 96 VGE = 15V, RG = 50Ω 0.06 — Energy losses include "tail" 0.08 — mJ See Fig. 9, 10, 14 0.14 0.2 21 — TJ = 150°C, 15 — IC = 6.5A, VCC = 480V ns 150 — VGE = 15V, RG = 50Ω 150 — Energy losses include "tail" 0.34 — mJ See Fig. 10, 11, 14 7.5 — nH Measured 5mm from package 490 — VGE = 0V 38 — pF VCC = 30V See Fig. 7 8.8 — ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC20W 25 F o r b o th : T ria n g u la r w a ve : 20 D uty c yc le: 50% TJ = 125 ° C Ts ink = 90 ° C G ate drive as spec ified P o w e r D is s ip a tio n = 1 3 W C la m p vo l ta g e : 8 0 % o f ra te d Load Current ( A ) 15 S q u a re wave : 6 0 % o f ra te d v o lta g e 10 5 Id e al d io de s 0 0.1 1 10 100 A 1000 f, Freq uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) T = 150 °C  J 10 10 TJ = 150 °C  TJ = 25 °C  V = 15V  20µs PULSE WIDTH GE 1 10 TJ = 25 °C  V = 50V  5µs PULSE WIDTH CC 5 6 7 9 10 11 1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20W 14 3.0 Maximum DC Collector Current(A) 12 10 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  I C = 13 A 8  I C = 6.5 A 2.0 6  I C =3.25 A 4 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20W 1000 800 VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 6.5A 16 C, Capacitance (pF) 600 Cies  12 400 8 200 C oes C res 4 0 1 10 100 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.15 Total Switching Losses (mJ) Total Switching Losses (mJ)  V CC = 480V V GE = 15V TJ = 25 ° C I C = 6.5A 10  50 Ω RG = Ohm VGE = 15V VCC = 480V 0.14 1  IC = 13 A  IC = 6.5 A  IC = 3.25 A 0.13 0.1 0.12 0 10 20 30 40 50 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) Ω TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20W 0.8 0.6 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ)  RG TJ VCC VGE = 50Ω Ohm = 150 ° C = 480V = 15V 100  VGE = 20V T J = 125 oC 0.4 10 0.2 0.0 0 2 4 6 8 10 12 SAFE OPERATING AREA 1 14 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC20W L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X I C@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4BC20W Case Outline and Dimensions — TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 3.78 (.149) 3.54 (.139) -A 6 .4 7 (.255) 6 .1 0 (.240) 1.15 (.0 45) M IN -B- 4.69 (.185) 4.20 (.165) 1.32 (.05 2) 1.22 (.04 8) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S ( IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 ( .1 60 ) 3.55 ( .1 40 ) LEAD 1234- A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 0.93 ( .037 ) 0.69 ( .027 ) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0 ) 2X 3X 3X 0.55 (.0 22) 0.46 (.0 18) 0 .3 6 (.0 1 4 ) 2.92 (.115 ) 2.64 (.104 ) CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d ( In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 8 www.irf.com