IRG4BC30F

PD - 91450B IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 31 17 120 120 ± 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.5 ––– 2.0 (0.07) Max. 1.2 ––– 80 ––– Units °C/W g (oz) www.irf.com 1 4/17/2000 IRG4BC30F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — Temperature Coeff. of Breakdown Voltage — 0.69 — 1.59 Collector-to-Emitter Saturation Voltage — 1.99 — 1.7 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -11 Forward Transconductance U 6.1 10 — — Zero Gate Voltage Collector Current — — — — Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.8 IC = 17A — IC = 31A See Fig.2, 5 V — IC = 17A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 17A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 51 77 IC = 17A 7.9 12 nC VCC = 400V See Fig. 8 19 28 VGE = 15V 21 — 15 — TJ = 25°C ns 200 300 IC = 17A, VCC = 480V 180 270 VGE = 15V, RG = 23Ω 0.23 — Energy losses include "tail" 1.18 — mJ See Fig. 10, 11, 13, 14 1.41 2.0 20 — TJ = 150°C, 16 — IC = 17A, VCC = 480V ns 290 — VGE = 15V, RG = 23Ω 350 — Energy losses include "tail" 2.5 — mJ See Fig. 13, 14 7.5 — nH Measured 5mm from package 1100 — VGE = 0V 74 — pF VCC = 30V See Fig. 7 14 — ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30F 50 F o r b o th : T ria n g u la r wa v e : I 40 Load Current ( A ) D uty cy c le: 50% TJ = 125 ° C T s ink = 90 ° C Ga te drive as s pec ified P o w e r D i ss ip a tio n = 2 1 W C la m p v o lta g e : 8 0 % o f ra te d 30 S q u are wa ve: 6 0 % o f ra te d vo lt a g e 20 I 10 Id e a l di o de s 0 0.1 1 10 A 100 f, Freq uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 I C , Collector-to-Emitter Current (A) 100 TJ = 25 ° C I C , Collector-to-Emitter Current (A) 100 T J = 150 ° C TJ = 150 ° C T J = 25 ° C 10 10 1 1 V G E = 15V 20µs PULSE WIDTH 10 A 1 5 6 7 8 9 V C C = 50V 5µs PULSE WIDTH A 10 11 12 13 VC E , Collector-to-Emitter Volta g e (V) VG E , Gate-to-Emitter Volta g e (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30F 40 V G E = 15 V 2.5 V G E = 1 5V 80µs PULSE WIDTH I C = 34A Maxim um D C Collector C urrent (A ) 30 V C E , Collector-to-Emitter Voltage (V) 2.0 20 I C = 17A 1.5 10 I C = 8.5A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 T C , C ase Tem perature ( ° C) T J , Junction Temperature ( ° C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0 .1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0 .0 1 0 .0 0 0 0 1 2 . P e a k T J = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30F 2000 VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce 1600 Cres = Cce Coes = Cce + Cgc SHORTED 20 V C E = 4 00V I C = 17A V G E , Gate-to-Emitter Voltage (V) 16 C, Capacitance (pF) 1200 C i es 12 800 8 C o es 400 4 C r es 0 1 10 A 100 0 0 10 20 30 40 50 A 60 V C E , Collector-to-Emitter Volta g e (V) Q g , Total Gate Char g e (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.50 Total Switching Losses (mJ) Total Switching Losses (mJ) VC C VG E TJ IC = 4 80V = 15V = 25 ° C = 17A 10 R G = 23 Ω V G E = 1 5V V C C = 480V I C = 34A 1.45 I C = 17A 1 1.40 I C = 8.5A 1.35 1.30 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , Gate Resistance ( Ω ) TJ , Junction Temperature ( ° C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30F 6.0 5.0 4.0 I C , C ollecto r-to -Em itter Cu rrent (A) Total Switching Losses (mJ) RG TJ V CC V GE = = = = 23 Ω 1 50 ° C 480V 15V 1000 VG E E 2 0V G= T J = 12 5 ° C 100 S A FE O P E R A TIN G A R E A 3.0 2.0 10 1.0 0.0 0 10 20 30 40 A 1 1 10 100 1000 I C , Collector-to-Emitter Current ( A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC30F L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4BC30F Case Outline and Dimensions — TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 3.78 (.149) 3.54 (.139) -A 6 .4 7 (.255) 6 .1 0 (.240) 1.15 (.0 45) M IN -B- 4.69 (.185) 4.20 (.165) 1.32 (.05 2) 1.22 (.04 8) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S ( IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . 3.96 ( .1 60 ) 3X 3.55 ( .1 40 ) 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) LEAD 1234- A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 0.93 ( .037 ) 0.69 ( .027 ) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0 ) 2X 3X 3X 0.55 (.0 22) 0.46 (.0 18) 0 .3 6 (.0 1 4 ) 2.92 (.115 ) 2.64 (.104 ) CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d ( In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com