IRG4BC30FD1PBF

IRG4BC30FD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C PD - 95614 Fast CoPack IGBT Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. • Industry standard TO-220AB package. • Lead-Free G E VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specific application conditions. • FRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less / no snubbing. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 31 17 120 120 8 16 ±20 100 42 -55 to +150 Units V A d c Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec. Mounting Torque, 6-32 or M3 Screw V W PD @ TC = 100°C Maximum Power Dissipation °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 2.0 (0.07) Max. 1.2 2.0 ––– 80 ––– Units °C/W g (oz.) www.irf.com 1 8/2/04 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage IRG4BC30FD1PbF ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage e Min. Typ. Max. Units 600 — — — — 3.0 — 0.69 1.59 1.99 1.7 — -11 10 — — 2.0 1.3 — — — 1.8 — — 6.0 — — 250 2500 2.4 1.8 ±100 nA V V V Conditions VGE = 0V, IC = 250µA VGE = 15V See Fig. 2, 5 V/°C VGE = 0V, IC = 1mA IC = 17A V IC = 31A IC = 17A, TJ = 150°C VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 17A µA VGE = 0V, VCE = 600V VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Collector-to-Emitter Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current f — 6.1 — — — — — VGE = 0V, VCE = 600V, TJ = 150°C IF = 8.0A IF = 8.0A, TJ = 150°C VGE = ±20V See Fig. 13 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — — — — — — — — 57 10 21 22 24 250 160 370 1420 1800 21 25 400 340 3280 7.5 1170 100 11 46 85 4.8 8.5 110 410 260 270 62 12 24 — — 320 210 — — 2290 — — — — — — — — — 61 93 6.5 10 190 550 — — nC A ns pF µJ nH ns TJ = 150°C µJ ns nC IC = 17A VCC = 400V VGE = 15V TJ = 25°C Conditions See Fig. 8 IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses inlcude "tail" and diode reverse recovery. See Fig. 9, 10, 11, 18 See Fig. 9,10,11,18 IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses inlcude "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C See Fig. 14 See Fig. 15 See Fig. 16 See Fig. 17 di/dt 200A/µs VR = 200V IF = 12A See Fig. 7 A/µs TJ = 25°C TJ = 125°C 2 www.irf.com IRG4BC30FD1PbF (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency 1000 1000 IC , Collector-to-Emitter Current (A) 100 TJ = 25°C IC , Collector-to-Emitter Current (A) 100 TJ = 150°C TJ = 150°C TJ = 25°C 10 10 1 1 V GE = 15V 20µs PULSE WIDTH A 10 1 5 6 7 8 9 V CC = 50V 5µs PULSE WIDTH A 10 11 12 13 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30FD1PbF 40 V GE = 15V 2.5 VCE , Collector-to-Emitter Voltage (V) VGE = 15V 80µs PULSE WIDTH I C = 34A Maximum DC Collector Current (A) 30 2.0 20 I C = 17A 1.5 10 I C = 8.5A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 1.0 TC , Case Temperature (°C) TJ , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 Notes: 1. Duty factor D = t 1 /t 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30FD1PbF 2000 1800 1600 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc 14 VGE, Gate-to-Emitter Voltage (V) 12 10 8 6 4 2 0 0 VCC = 400V IC = 17A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 1 10 100 1000 Cies Coes Cres 10 20 30 40 50 60 VCE, Collector-toEmitter-Voltage(V) Q G, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2000 VCE = 480V VGE = 15V 9000 8000 RG = 22Ω à IC = 34A Total Swiching Losses (mJ) 1900 Total Swiching Losses (mJ) TJ = 25°C I C = 17A 7000 6000 5000 4000 3000 2000 1000 VGE = 15V VCC = 480V 1800 IC = 17A IC = 8.5A 1700 1600 0 10 20 30 40 50 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance (Ω) T J, Juntion Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30FD1PbF 8000 7000 R G = 22Ω 1000 Total Swiching Losses (mJ) 6000 5000 4000 3000 2000 1000 0 TJ = 150°C VCE= 480V VGE = 15V I C , Collector-to-Emitter Current (A) VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 10 20 30 40 1 1 10 100 1000 IC, Collecto-to-Emitter (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 T = 175˚C J T = 150˚C J T = 25˚C J 1 0.1 0 1 2 3 4 Forward Voltage Drop - VFM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30FD1PbF 200 175 150 125 IF V = 390V R T = 25°C _____ J T = 125°C ---------J 20 V = 390V R T = 25°C _____ J T = 125°C ---------J 15 = 16A IF = 8A 100 75 50 25 0 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) IRRM (A) trr (ns) 10 5 IF = 16A IF = 8A 0 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt 1000 900 800 700 600 V = 390V R T = 25°C _____ J T = 125°C ---------J IF Fig. 15 - Typical Recovery Current vs. dif/dt 1400 V = 390V R T = 25°C _____ J T = 125°C ---------J = 16A 1200 IF = 8A 1000 di(rec)M / dt (A/µs) IF = 8A Qrr (nC) 800 500 400 300 200 100 0 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) 600 400 IF = 16A 200 0 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC30FD1PbF Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430µF D.U.T. Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = ∫ t1+5µS Vce Ic Vceic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = ∫ trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ieIc dt Vce dt t1 ∫ t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 ∫ t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC30FD1PbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig.18e - Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µF 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC30FD1PbF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20). ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19). ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. … Energy losses include "tail" and diode reverse recovery, using Diode FD100H06A5. TO-220 package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/