IRG4BC30KDS

PD -91594C IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-ch an nel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses • This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products • For hints see design tip 97003 D 2Pak Max. 600 28 16 58 58 12 58 10 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state)U Weight Typ. ––– 0.5 ––– 1.44 Max. 1.2 2.5 ––– 40 ––– Units °C/W g www.irf.com 1 4/24/2000 IRG4BC30KD-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage — 2.21 2.7 IC = 16A VGE = 15V See Fig. 2, 5 — 2.88 — IC = 28A V — 2.36 — IC = 16A, TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance T 5.4 8.1 — S VCE = 100V, IC = 16A Zero Gate Voltage Collector Current — — 250 VGE = 0V, VCE = 600V µA — — 2500 VGE = 0V, VCE = 600V, TJ = 150°C Diode Forward Voltage Drop — 1.4 1.7 IC = 12A See Fig. 13 V — 1.3 1.6 IC = 12A, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 67 100 IC = 16A 11 16 nC VCC = 400V See Fig.8 25 37 VGE = 15V 60 — 42 — TJ = 25°C ns 160 250 IC = 16A, VCC = 480V 80 120 VGE = 15V, RG = 23Ω 0.60 — Energy losses include "tail" 0.58 — mJ and diode reverse recovery 1.18 1.6 See Fig. 9,10,14 — — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V 58 — TJ = 150°C, See Fig. 11,14 42 — IC = 16A, VCC = 480V ns 210 — VGE = 15V, RG = 23Ω 160 — Energy losses include "tail" 1.69 — mJ and diode reverse recovery 7.5 — nH Measured 5mm from package 920 — VGE = 0V 110 — pF VCC = 30V See Fig. 7 27 — ƒ = 1.0MHz 42 60 TJ = 25°C See Fig. ns 80 120 TJ = 125°C 14 IF = 12A 3.5 6.0 TJ = 25°C See Fig. A 5.6 10 TJ = 125°C 15 VR = 200V 80 180 TJ = 25°C See Fig. nC 220 600 TJ = 125°C 16 di/dt = 200Aµs 180 — TJ = 25°C See Fig. A/µs 160 — TJ = 125°C 17 2 www.irf.com IRG4BC30KD-S 2.5 For both: 2.0 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125 ° C 55°C T s ink = 90 ° C G ate drive as specified P ow e r Dis sip ation = 1.8 W S q u a re w a v e : 6 0% of rate d volta ge 1.5 1.0 I 0.5 Id e a l d io d e s 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 150 o C  I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 25 o C  TJ = 150 o C  10 10 TJ = 25 oC  1 1 0.1 1 V = 15V  20µs PULSE WIDTH GE 10 0.1 5 10 V = 50V  5µs PULSE WIDTH CC 15 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC30KD-S 30 4.0 Maximum DC Collector Current(A) 25 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  I C = 32 A 20 3.0 15  I C = 16 A 2.0 10  I C = 8.0A 8A 5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) , Junction Temperature C C) TTJ Junction Temperature ( °( °) J, Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30KD-S 1500 1200 VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 16A 16 C, Capacitance (pF) 900 Cies  12 600 8 300 C oes C res 4 0 1 10 100 0 0 20 40 60 80 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.50 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 1.40 I C = 16A  10  RG = Ohm 23Ω VGE = 15V VCC = 480V  IC = 32 A  IC = 16 A 1 1.30  IC = 8.0A 8A 1.20 1.10 1.00 0 R Gate Resistance Ω ) RG G, ,Gate Resistance ((Ohm) 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC30KD-S 5.0 3.0 I C , Collector-to-Emitter Current (A) 16 24 32 40 Total Switching Losses (mJ) RG TJ VCC 4.0 VGE  = 23Ω Ohm = 150 ° C = 480V = 15V 100  VGE = 20V 125 oC T J = 125 °C 10 2.0 1.0 0.0 0 8 SAFE OPERATING AREA 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Insta ntane ous Forward C urrent - I F (A ) TJ = 15 0 ° C 10 TJ = 12 5 ° C TJ = 2 5 ° C 1 0.4 0.8 1.2 1.6 2.0 2.4 F o rwa rd V olta g e D rop - V F M ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30KD-S 160 100 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 120 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C I F = 24 A I F = 1 2A 80 I IR R M - (A ) I F = 2 4A 10 t rr - (ns) I F = 1 2A I F = 6 .0A I F = 6 .0 A 40 0 100 d i f /d t - ( A / µ s ) 1000 1 100 1000 di f /dt - ( A / µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 600 10000 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 400 d i(re c )M /d t - (A /µ s) 1000 Q R R - (n C ) IF = 6.0 A I F = 24 A I F = 12 A I F = 12 A 100 200 I F = 6.0 A I F = 2 4A 0 100 d i f /dt - ( A / µ s ) 1000 10 100 1000 d i f /d t - ( A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC30KD-S Same ty pe device as D .U.T. 80% of Vce 430µF D .U .T. 90% Vge VC 90% 10% t d(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr Eon E ts = (Eon +Eoff ) tf t=5µs Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC30KD-S V g G A T E S IG N AL D EV IC E UN DE R T E ST C UR R EN T D.U .T . V O LT A G E IN D .U.T . C UR R EN T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1 000 V 50V 6 00 0µ F 100 V Vc * D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit Tape & Reel Information D2Pak TRR 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 0 .3 6 8 ( .0 1 4 5 ) 0 .3 4 2 ( .0 1 3 5 ) F E E D D I R E C T IO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1.6 0 ( .4 5 7 ) 1 1.4 0 ( .4 4 9 ) 15 .42 ( .6 09 ) 15 .22 ( .6 01 ) 2 4 .3 0 ( .95 7 ) 2 3 .9 0 ( .94 1 ) TRL 1 0 .9 0 ( .4 2 9 ) 1 0 .7 0 ( .4 2 1 ) 1 .7 5 ( .0 69 ) 1 .2 5 ( .0 49 ) 1 6 .10 ( .6 3 4 ) 1 5 .90 ( .6 2 6 ) 4 .7 2 ( .1 3 6 ) 4 .5 2 ( .1 7 8 ) F E E D D IR E C T IO N 1 3.50 ( .5 32 ) 1 2.80 ( .5 04 ) 27 .4 0 ( 1.0 79 ) 23 .9 0 ( .94 1 ) 4 3 3 0.00 ( 14 .1 7 3 ) M AX . 6 0.00 ( 2 .3 62 ) M IN . N O T ES : 1. C O MF O R M S T O EIA-4 18 . 2. C O N TR O LL IN G D IM EN S IO N : MIL LIM ET ER . 3. D IM EN S IO N M EA SU R ED @ H U B. 4. IN C LU D E S F LAN G E D IST O R T IO N @ O U TER ED G E. 2 6 .4 0 ( 1.03 9 ) 2 4 .4 0 ( .9 61 ) 3 30 .4 0 ( 1.19 7 ) M A X. 4 www.irf.com 9 IRG4BC30KD-S Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. U When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. D2Pak Package Outline 1 0 .5 4 ( .4 1 5 ) 1 0 .2 9 ( .4 0 5 ) 1 .4 0 ( .0 55 ) M A X. -A2 4 .6 9 ( .1 8 5 ) 4 .2 0 ( .1 6 5 ) -B1 .3 2 ( .0 5 2 ) 1 .2 2 ( .0 4 8 ) 6 .4 7 ( .2 5 5 ) 6 .1 8 ( .2 4 3 ) 1 5 .4 9 ( .6 1 0 ) 1 4 .7 3 ( .5 8 0 ) 5 .2 8 ( .2 0 8 ) 4 .7 8 ( .1 8 8 ) 1 .4 0 ( .0 5 5 ) 1 .1 4 ( .0 4 5 ) 5 .0 8 ( .2 0 0 ) 1 .3 9 ( .0 5 5 ) 1 .1 4 ( .0 4 5 ) 2 .7 9 ( .1 1 0 ) 2 .2 9 ( .0 9 0 ) 2 .6 1 ( .1 0 3 ) 2 .3 2 ( .0 9 1 ) 8 .8 9 ( .3 5 0 ) REF. 1 0 .1 6 ( .4 0 0 ) REF . 1 .7 8 ( .0 7 0 ) 1 .2 7 ( .0 5 0 ) 1 3 3X 0 .9 3 ( .0 3 7 ) 3X 0 .6 9 ( .0 2 7 ) 0 .2 5 ( .0 1 0 ) M BAM 0 .5 5 ( .0 2 2 ) 0 .4 6 ( .0 1 8 ) M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .43 ( .4 5 0 ) NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S . L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 8 .8 9 ( .3 5 0 ) 1 7 .7 8 ( .7 0 0 ) 3 .8 1 ( .1 5 0 ) 2 .0 8 ( .0 8 2 ) 2X 2 .5 4 ( .1 0 0 ) 2X IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 10 www.irf.com