IRG4BC30KS

PD - 91619B IRG4BC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGBC30K-S and IRGBC30M-S devices D 2 Pak Max. 600 28 16 58 58 10 ±20 260 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Units V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state)V Weight Typ. ––– 0.5 ––– 1.44 Max. 1.2 ––– 40 ––– Units °C/W g www.irf.com 1 4/24/2000 IRG4BC30K-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — 2.21 — 2.21 VCE(ON) Collector-to-Emitter Saturation Voltage — 2.88 — 2.36 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 gfe Forward Transconductance U 5.4 8.1 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA — IC = 14A VGE = 15V 2.7 IC = 16A V — IC = 28A See Fig.2, 5 — IC = 16A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 16A 250 VGE = 0V, VCE = 600V 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C 1100 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 — — — — — — — — — — — — Typ. 67 11 25 26 28 130 120 0.36 0.51 0.87 — 25 29 190 190 1.2 0.26 0.36 0.62 7.5 920 110 27 Max. Units Conditions 100 IC = 16A 16 nC VCC = 400V See Fig.8 37 VGE = 15V — — TJ = 25°C ns 200 IC = 16A, VCC = 480V 170 VGE = 15V, RG = 23 Ω — Energy losses include "tail" — mJ See Fig. 9,10,14 1.3 — µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 23Ω , VCPK < 500V — TJ = 150°C, — IC = 16A, VCC = 480V ns — VGE = 15V, RG = 23 Ω — Energy losses include "tail" — mJ See Fig. 11,14 — TJ = 25°C, VGE = 15V, RG = 23Ω — mJ IC = 14A, VCC = 480V — Energy losses include "tail" — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Details of note Q through V are on the last page 2 www.irf.com IRG4BC30K-S 6.0 F o r b o th : T ria n g u la r w a ve : 5.0 Load Current ( A ) D uty c yc le: 50% TJ = 125 ° C Ts ink = 90 ° CC 55° G ate drive as spec ified P o w e r D is s ip a tio n = 1 .8 W C la m p vo l ta g e : 8 0 % o f ra te d 4.0 S q u a re wave : 3.0 6 0 % o f ra te d v o lta g e 2.0 1.0 Id e al d io de s 0.0 0.1 1 10 A 100 f, Freq uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 150 o C  I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 25 o C  TJ = 150 o C  10 10 TJ = 25 o C  1 1 0.1 1 V = 15V  20µs PULSE WIDTH GE 10 0.1 5 10 V = 50V  5µs PULSE WIDTH CC 15 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC30K-S 30 4.0 Maximum DC Collector Current(A) 25 20 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  I C = 32 A 3.0 15  I C = 16 A 2.0 10  I C = 8.0A 8A 5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) T J Junction Temperature C C) TJJ, , unction Temperature ( °( °) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.001 0.01  P DM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30K-S 1500 1200 VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 16A 16 C, Capacitance (pF) 900 Cies  12 600 8 300 C oes C res 4 0 1 10 100 0 0 20 40 60 80 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.5 Total Switching Losses (mJ) Total Switching Losses (mJ)  V CC = 480V V GE = 15V TJ = 25 ° C I C = 16A 10  RG = Ohm 23Ω VGE = 15V VCC = 480V  IC = 32 A  IC = 16 A 1.0 1  IC = 8.0A 8A 0.5 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) Ω TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC30K-S 4.0 2.4 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 3.2 VGE  = 23Ω Ohm = 150 ° C = 480V = 15V 100  VGE = 20V T J = 125 oC 10 1.6 0.8 0.0 0 8 16 24 32 SAFE OPERATING AREA 1 40 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Tape & Reel Information D2Pak TR R 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1.6 0 ( .0 6 3 ) 1.5 0 ( .0 5 9 ) 0 .3 6 8 ( .0 1 4 5 ) 0 .3 4 2 ( .0 1 3 5 ) F E E D D I RE C T IO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1 .6 0 ( .45 7 ) 1 1 .4 0 ( .44 9 ) 1 5.4 2 ( .6 0 9 ) 1 5.2 2 ( .6 0 1 ) 2 4 .3 0 ( .95 7 ) 2 3 .9 0 ( .94 1 ) TRL 1 0 .9 0 ( .42 9 ) 1 0 .7 0 ( .42 1 ) 1.7 5 ( .0 6 9 ) 1.2 5 ( .0 4 9 ) 1 6 .1 0 ( .63 4 ) 1 5 .9 0 ( .62 6 ) 4 .7 2 ( .1 3 6 ) 4 .5 2 ( .1 7 8 ) F E E D D IR E C T I ON 1 3.50 ( .53 2 ) 1 2.80 ( .50 4 ) 2 7.4 0 ( 1.0 7 9 ) 2 3.9 0 ( .94 1 ) 4 3 3 0.00 ( 14 .1 73 ) M AX. 6 0.00 ( 2 .3 62 ) M IN . N O TE S : 1. C O MF O R M S T O EIA- 41 8. 2. C O N TR O LL IN G D IM EN SIO N : M IL LIM ET ER . 3. D IM EN S IO N M EAS UR ED @ H U B. 4. IN C L U D E S FL AN G E D IST O R T IO N @ O U T ER E D G E. 26 .4 0 ( 1 .03 9 ) 24 .4 0 ( .9 61 ) 3 3 0.4 0 ( 1.19 7 ) M A X. 4 6 www.irf.com IRG4BC30K-S L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X I C@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4BC30K-S Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. V When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. D2Pak Package Outline 1 0 .5 4 ( .4 1 5 ) 1 0 .2 9 ( .4 0 5 ) 1 .4 0 ( .0 5 5 ) M A X. -A2 4 .6 9 ( .1 8 5 ) 4 .2 0 ( .1 6 5 ) -B 1 .3 2 ( .0 5 2 ) 1 .2 2 ( .0 4 8 ) 6 .4 7 ( .2 5 5 ) 6 .1 8 ( .2 4 3 ) 1 5 .4 9 ( .6 1 0 ) 1 4 .7 3 ( .5 8 0 ) 5 .2 8 ( .2 0 8 ) 4 .7 8 ( .1 8 8 ) 1 .4 0 ( .0 5 5 ) 1 .1 4 ( .0 4 5 ) 5 .0 8 ( .2 0 0 ) 1 .3 9 ( .0 5 5 ) 1 .1 4 ( .0 4 5 ) 2 .7 9 ( .1 1 0 ) 2 .2 9 ( .0 9 0 ) 2 .6 1 ( .1 0 3 ) 2 .3 2 ( .0 9 1 ) 8 .8 9 ( .3 5 0 ) R E F. 1 0 .1 6 ( .4 0 0 ) REF . 1 .7 8 ( .0 7 0 ) 1 .2 7 ( .0 5 0 ) 1 3 3X 0 .9 3 ( .0 3 7 ) 3X 0 .6 9 ( .0 2 7 ) 0 .2 5 ( .0 1 0 ) M BAM 0 .5 5 ( .0 2 2 ) 0 .4 6 ( .0 1 8 ) M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .4 3 ( .4 5 0 ) NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S . L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OURCE 8 .8 9 ( .3 5 0 ) 1 7 .7 8 ( .7 0 0 ) 3 .8 1 ( .1 5 0 ) 2 .0 8 ( .0 8 2 ) 2X 2 .5 4 ( .1 0 0 ) 2X IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 8 www.irf.com