IRG4BC30SS

PD - 94069 IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tight parameter distribution and high efficiency C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 34 18 68 68 ±20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case ) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.50 ––– 1.44 Max. 1.2 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 12/28/00 IRG4BC30S-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage „ Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VCE(ON) VGE(th) Gate Threshold Voltage ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage gfe Forward Transconductance … ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current Min. 600 18 — — — — 3.0 — 6.0 — — — — Typ. Max. Units Conditions — — V VGE = 0V, IC = 250µA — — V VGE = 0V, IC = 1.0A 0.75 — V/°C VGE = 0V, IC = 1.0mA 1.40 1.6 IC = 18A VGE = 15V 1.84 — IC = 34A See Fig. 2, 5 V 1.45 — IC = 18A , TJ = 150°C — 6.0 VCE = VGE, IC = 250µA -11 — mV/°C VCE = VGE, IC = 250µA 11 — S VCE = 100V, IC = 18A — 250 VGE = 0V, VCE = 600V µA — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — 1000 VGE = 0V, VCE = 600V, TJ = 150°C — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Q ge Qgc td(on) tr td(off) tf E on Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 50 75 IC = 18A 7.3 11 nC VCC = 400V See Fig. 8 17 26 VGE = 15V 22 — 18 — TJ = 25°C ns 540 810 IC = 18A, VCC = 480V 390 590 VGE = 15V, RG = 23Ω 0.26 — Energy losses include "tail" 3.45 — mJ See Fig. 9, 10, 14 3.71 5.6 21 — TJ = 150°C, 19 — IC = 18A, VCC = 480V ns 790 — VGE = 15V, RG = 23Ω 760 — Energy losses include "tail" 6.55 — mJ See Fig. 11, 14 7.5 — nH Measured 5mm from package 1100 — VGE = 0V 72 — pF VCC = 30V See Fig. 7 13 — ƒ = 1.0MHz  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature (See fig. 13b). ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a). „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30S-S 50 F or both: Triang ula r w a ve : I 40 Load Current ( A ) D uty c yc le: 50% T J = 125°C T s ink = 90°C G ate drive as s pecified P ow e r D is sip atio n = 21 W Cla m p vo ltag e: 80 % of rate d 30 S q u a re w a v e : 6 0% of rate d volta ge 20 I 10 Id e a l d io d e s 0 0.1 1 10 A 100 f, Freq uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 o C I C , Collector-to-Emitter Current (A) TJ = 150 o C 10 10 TJ = 25 oC 1 1 1 V GE = 15V 20µs PULSE WIDTH 10 0.1 5 6 7 V CC = 50V 5µs PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30S-S 35 3.0 Maximum DC Collector Current(A) 30 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH 25 2.5 I C = 36 A 20 2.0 15 10 I C = 18 A 1.5 5 I C = 9.09A A 1.0 -60 -40 -20 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30S-S 2000 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 18A 16 C, Capacitance (pF) 1500 Cies 1000 12 8 500 Coes Cres 4 0 1 10 0 0 10 20 30 40 50 60 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.80 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 3.76 I C = 18A 100 RG = 23Ohm Ω VGE = 15V VCC = 480V IC = 36 A 10 3.72 IC = 18 A IC = 9.0 A 9A 3.68 1 3.64 3.60 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) Ω TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30S-S 15.0 9.0 6.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 12.0 VGE = 23Ohm Ω = 150 ° C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 10 3.0 SAFE OPERATING AREA 0.0 0 10 20 30 40 50 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC30S-S L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X IC@25°C 480µF 960V ‚  * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V  ‚ ƒ * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit  ‚ 90 % ƒ 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4BC30S-S D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.irf.com IRG4BC30S-S D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4.1 0 (.1 6 1 ) 3.9 0 (.1 5 3 ) 1 .6 0 (.06 3) 1 .5 0 (.05 9) 0.3 68 (.01 45 ) 0.3 42 (.01 35 ) F E ED D IR E C TIO N 1 .8 5 (.0 73 ) 1 .6 5 (.0 65 ) 1 1.6 0 (.45 7) 1 1.4 0 (.44 9) 15.4 2 (.60 9) 15.2 2 (.60 1) 2 4.30 (.9 5 7) 2 3.90 (.9 4 1) TR L 1 0.90 (.42 9) 1 0.70 (.42 1) 1.75 (.06 9) 1.25 (.04 9) 16 .10 (.63 4) 15 .90 (.62 6) 4.72 (.1 3 6) 4.52 (.1 7 8) F E E D D IR E C TIO N 13.50 (.532) 12.80 (.504) 2 7.40 (1.079) 2 3.90 (.941) 4 330 .00 (14.173) M AX . 60.00 (2.3 62) MIN . NO T ES : 1. C OM F OR MS TO EIA-418. 2. C ON TR O LLING DIM ENS IO N: M ILLIM ETER . 3. D IME NSIO N M EAS URE D @ HUB . 4. IN CLU DE S F LAN GE DISTO RT IO N @ O U TER E DG E. 26 .40 (1.039) 24 .40 (.961) 30.40 (1.197) M AX. 4 3 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 www.irf.com 9