IRG4BC40WPBF

PD - 95429 IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Lead-Free C VCES = 600V G E VCE(on) typ. = 2.05V @VGE = 15V, IC = 20A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 40 20 160 160 ± 20 160 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.5 ––– 2.0 (0.07) Max. 0.77 ––– 80 ––– Units °C/W g (oz) www.irf.com 1 06/17/04 IRG4BC40WPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.44 — V/°C VGE = 0V, IC = 1.0mA — 2.05 2.5 IC = 20A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 2.36 — IC = 40A See Fig.2, 5 V — 1.90 — IC = 20A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage — 13 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance … 18 28 — S VCE = 100 V, IC =20A — — 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 2500 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V V(BR)CES V(BR)ECS Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff E ts td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 98 12 36 27 22 100 74 0.11 0.23 0.34 25 23 170 124 0.85 7.5 1900 140 35 Max. Units Conditions 147 IC =20A 18 nC VCC = 400V See Fig.8 54 VGE = 15V — — TJ = 25°C ns 150 IC = 20A, VCC = 480V 110 VGE = 15V, RG = 10 Ω — Energy losses include "tail" — mJ See Fig. 9,10, 14 0.45 — TJ = 150°C, — IC = 20A, VCC = 480V ns — VGE = 15V, RG = 10 Ω — Energy losses include "tail" — mJ See Fig. 10,11, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC40WPbF 50 For both: Triangular wave: 40 Load Current ( A ) Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 28W Clamp voltage: 80% of rated 30 Square wave: 60% of rated voltage 20 10 Ideal diodes 0 0.1 1 10 100 A 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) TJ = 25 ° C 100 I C , Collector-to-Emitter Current (A) 100 TJ = 150 °C TJ = 150 °C 10 10 TJ = 25 °C 1 1.0 V GE = 15V 80µs PULSE WIDTH 2.0 3.0 4.0 5.0 1 5 7 V CC = 50V 5µs PULSE WIDTH 9 11 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC40WPbF 50 3.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 40 A Maximum DC Collector Current(A) 40 2.5 30 2.0 IC = 20 A IC = 10 A 20 1.5 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 PDM t1 t2 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40WPbF 4000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 20A 16 C, Capacitance (pF) 3000 Cies 2000 12 8 Coes 1000 Cres 4 0 1 10 100 0 0 20 40 60 80 100 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.0 0.8 0.7 0.6 0.5 0.4 0.3 10 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V 0.9 TJ = 25 °C I C = 20A 10 RG = 10 Ω 10Ohm VGE = 15V VCC = 480V IC = 40 A 1 IC = 20 A IC = 10 A RG , Gate Resistance (Ω) (Ohm) 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC40WPbF 2.0 1.5 1.0 I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE =10 Ω 10Ohm = 150 ° C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 0.5 0.0 5 15 25 35 45 SAFE OPERATING AREA 10 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC40WPbF L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X I C@25°C c 480µF 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V ™Ã 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5µs E off www.irf.com 7 IRG4BC40WPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMP L E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/