IRG4BH20K-SPBF

PD -95891 IRG4BH20K-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Industry standard D2Pak package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.0A n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 11 5.0 22 22 10 ±20 130 60 24 -55 to +150 Units V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.24 ––– 6 (0.21) Max. 2.1 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 04/10/07 IRG4BH20K-SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 — Emitter-to-Collector Breakdown Voltage „ 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.13 — 3.17 VCE(ON) Collector-to-Emitter Saturation Voltage — 4.04 — 2.84 VGE(th) Gate Threshold Voltage 3.5 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 gfe Forward Transconductance … 2.3 3.5 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 2.5mA 4.3 IC = 5.0A VGE = 15V — IC = 11A See Fig.2, 5 V — IC = 5.0A , TJ = 150°C 6.5 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1mA — S VCE = 100 V, IC = 5.0A 250 VGE = 0V, VCE = 1200V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 — — — — — — — — — Typ. Max. Units Conditions 28 43 IC = 5.0A 4.4 6.6 nC VCC = 400V See Fig.8 12 18 VGE = 15V 23 — 26 — TJ = 25°C ns 93 140 IC =5.0A, VCC = 960V 270 400 VGE = 15V, RG = 50Ω 0.45 — Energy losses include "tail" 0.44 — mJ See Fig. 9,10,14 0.89 1.2 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 50Ω 23 — TJ = 150°C, 28 — IC = 5.0A, VCC = 960V ns 100 — VGE = 15V, RG = 50 Ω 620 — Energy losses include "tail" 1.7 — mJ See Fig. 10,11,14 7.5 — nH Between lead and center of die contact 435 — VGE = 0V 44 — pF VCC = 30V See Fig. 7 8.3 — ƒ = 1.0MHz  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) (See fig. 13a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω, „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRG4BH20K-SPbF 16 F or both: Triangular wave: Load Current ( A ) 12 Duty cycle: 50% TJ = 125 ˚ C T sink = 90 ˚ C Gate drive as specified Power Dissipation = 15W Clamp voltage: 80% of rated Sq uare wav e: 8 60% of rated voltage 4 Ideal diodes 0 ) 0.1 1 f, Frequency (kHz) 10 100 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) 10 TJ = 150 °C I C , Collector-to-Emitter Current (A) 10 TJ = 150 °C 1 TJ = 25 °C V GE = 15V 20µs PULSE WIDTH 1 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 6 8 10 12 14 0.1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BH20K-SPbF 12 5.0 Maximum DC Collector Current(A) 9 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH 4.0 IC = 10 A 6 3.0 IC = 5A 3 IC = 2.5 A 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TTJ ,, Junction Temperature( (°C ) J Junction Temperature °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BH20K-SPbF 800 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 11A 16 C, Capacitance (pF) 600 Cies 400 12 8 200 Coes Cres 4 0 1 10 100 0 VCE , Collector-to-Emitter Voltage (V) 0 5 10 15 20 25 30 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.95 Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 960V VGE = 15V TJ = 25 °C 0.90 I C = 11A 10 Ω RG = 50Ohm VGE = 15V VCC = 960V IC = 10 A 0.85 IC = 1 5A IC = 2.5 A 0.80 0.75 0.70 0 10 20 30 40 50 RG R,GGate Resistance (Ohm) , Gate Resistance ( Ω ) 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TTJ ,Junction Temperature (( °C )) J , Junction Temperature °C Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BH20K-SPbF 5.0 Total Switching Losses (mJ) 3.0 I C , Collector Current (A) RG TJ VCC 4.0 VGE Ω = 50Ohm = 150° C = 960V = 15V 100 VGE = 20V T J = 125 o C 10 2.0 1.0 0.0 0 2 4 6 8 10 1 SAFE OPERATING AREA 1 10 100 1000 10000 I C , Collector Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BH20K-SPbF L 50V 1000V VC * D.U.T. RL = 0 - 960V 960V 2 X IC@25°C c 480µF 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V 1000V VC D.U.T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 960V ™Ã d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5µs E off www.irf.com 7 IRG4BH20K-SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ A$"T Q6SUÃIVH7@S 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ 8 www.irf.com IRG4BH20K-SPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Data and specifications subject to change without notice. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/2007 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/