IRG4CH40SB

PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C G E 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 4.5V Max. IC = 10A, TJ = 25°C, VGE = 15V 1200V Min. TJ = 25°C, ICES = 250µA, VGE = 0V 3.0V Min., 6.0V Max. VGE = VCE , TJ =25°C, IC =250µA 300 µA Max. TJ = 25°C, VCE = 1200V ± 11 µA Max. TJ = 25°C, VGE = +/- 20V Cr-NiV-Ag ( 1kA-2kA-2.5kA ) 99% Al, 1% Si (4 microns) 0.170" x 0.243" 150mm, with std. < 100 > flat .015" + / -.003" 01-5242 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRG4PH40S Die Outline NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2. CONTROLLING DIMENSION: (INCH). 3. LETTER DESIGNATION: S = SOURCE SK = SOURCE KELVIN G = GATE IS = CURRENT SENSE 4. DIMENSIONAL TOLERANCES: BONDING PADS: < 0.635 TOLERANCE = +/- 0.013 WIDTH < (.0250) TOLERANCE = +/- (.0005) & < 0.635 TOLERANCE = +/- 0.025 LENGTH < (.0250) TOLERANCE = +/- (.0010) OVERALL DIE: < 1.270 TOLERANCE = +/- 0.102 WIDTH < (.050) TOLERANCE = +/- (.004) & < 0.635 TOLERANCE = +/- 0.203 LENGTH < (.050) TOLERANCE = +/- (.008) 5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III www.irf.com