IRG4IBC30UDPBF

PD- 95598 IRG4IBC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage … • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline • Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits • Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLP AK Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case … Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 17 8.9 92 92 8.5 92 2500 ± 20 45 18 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ. ––– ––– ––– 2.0 (0.07) Max. 2.8 4.1 65 ––– Units °C/W g (oz) www.irf.com 1 7/27/04 IRG4IBC30UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter Breakdown Voltageƒ ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. 600 ––– ––– ––– ––– Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ––– Forward Transconductance „ 3.1 Zero Gate Voltage Collector Current ––– ––– Diode Forward Voltage Drop ––– ––– Gate-to-Emitter Leakage Current ––– Typ. ––– 0.63 1.95 2.52 2.09 ––– -11 8.6 ––– ––– 1.4 1.3 ––– Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V/°C VGE = 0V, IC = 1.0mA 2.1 IC = 12A VGE = 15V ––– V IC = 23A See Fig. 2, 5 ––– IC = 12A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 250µA ––– S VCE = 100V, IC = 12A 250 µA VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 12A See Fig. 13 1.6 IC = 12A, TJ = 150°C ±100 nA VGE = ±20V VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 50 8.1 18 40 21 91 80 0.38 0.16 0.54 40 22 120 180 0.89 7.5 1100 73 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig. 8 27 VGE = 15V ––– TJ = 25°C ––– ns IC = 12A, VCC = 480V 140 VGE = 15V, RG = 23Ω 130 Energy losses include "tail" and ––– diode reverse recovery. ––– mJ See Fig. 9, 10, 11, 18 0.9 ––– TJ = 150°C, See Fig. 9, 10, 11, 18 ––– ns IC = 12A, VCC = 480V ––– VGE = 15V, RG = 23Ω ––– Energy losses include "tail" and ––– mJ diode reverse recovery. ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt 200A/µs ––– A/µs TJ = 25°C See Fig. ––– TJ = 125°C 17 2 www.irf.com IRG4IBC30UDPbF 12 For both: 10 LOAD CURRENT (A) Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 13 W 8 Square wave: 60% of rated voltage I 6 4 Ideal diodes 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 IC , Collector-to-Emitter Current (A) TJ = 25°C TJ = 150°C 10 IC , Collector-to-Emitter Current (A) TJ = 150°C 10 TJ = 25°C 1 1 0.1 0.1 1 VGE = 15V 20µs PULSE WIDTH A 10 0.1 5 6 7 8 V CC = 10V 5µs PULSE WIDTH A 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4IBC30UDPbF 20 3.0 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current(A) V GE = 15V 80µs PULSE WIDTH IC = 24A 16 2.5 12 8 IC = 12A 2.0 4 I C = 6.0A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 1.5 TC , Case Temperature ( °C) TJ , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 10 PDM t1 t2 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4IBC30UDPbF 2000 C, Capacitance (pF) 1600 VGE , Gate-to-Emitter Voltage (V) A V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 12A 16 Cies 1200 12 800 Coes Cres 8 400 4 0 1 10 0 0 10 20 30 40 A 50 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.60 10 Total Switchig Losses (mJ) 0.58 Total Switchig Losses (mJ) V CC = 480V V GE = 15V T J = 25°C I C = 12A R G = 23Ω V GE = 15V V CC = 480V I C = 24A 0.56 1 I C = 12A I C = 6.0A 0.54 0.52 0.50 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G, Gate Resistance ( Ω) TJ , Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4IBC30UDPbF 2.0 Total Switchig Losses (mJ) 1.2 I C , Collector Current (A) 1.6 R G = 23 Ω T J = 150°C V CC = 480V V GE = 15V 1000 VGE = 20V T J = 125 oC 100 10 0.8 1 0.4 0.0 0 10 20 A 30 0.1 SAFE OPERATING AREA 1 10 100 1000 IC , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4IBC30UDPbF 160 100 VR = 200V TJ = 125°C TJ = 25°C 120 VR = 200V TJ = 125°C TJ = 25°C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/µs) 1000 1 100 di f /dt - (A/µs) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 600 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 400 di(rec)M/dt - (A/µs) 1000 Q RR - (nC) IF = 6.0A I F = 24A 200 I F = 12A I F = 12A 100 IF = 6.0A IF = 24A 0 100 di f /dt - (A/µs) 1000 10 100 di f /dt - (A/µs) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4IBC30UDPbF Same type device as D.U.T. 90% 80% of Vce 430µF D.U.T. Vge V C 10% 90% td(off) 10% IC 5% t d(on) tr tf t=5µs Eon Ets= (E +Eoff ) on Eoff Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = ∫ trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 ∫ t4 Erec = Vd id dt t3 t1 ∫ t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4IBC30UDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µF 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4IBC30UDPbF Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. … t = 60s, f = 60Hz TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L OT COD E 3 4 3 2 AS S E M B L E D ON W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT ION AL R E C T IF IE R L OGO AS S E M B L Y L OT C OD E P AR T N U M B E R IR F I8 4 0 G 924K 34 32 Note: "P" in assembly line position indicates "Lead-Free" D AT E C O D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/