IRG4PC30UD

PD 91462B IRG4PC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-cha nn el Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 23 12 92 92 12 92 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.24 ----6 (0.21) Max. 1.2 2.5 -----40 ------ Units °C/W g (oz) www.irf.com 1 12/30/00 IRG4PC30UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 ∆V(BR)CES/∆ TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance T 3.1 Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.63 ---- V/°C 1.95 2.1 2.52 ---V 2.09 ------- 6.0 -11 ---- mV/°C 8.6 ---S ---- 250 µA ---- 2500 1.4 1.7 V 1.3 1.6 ---- ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 12A V GE = 15V IC = 23A See Fig. 2, 5 IC = 12A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 12A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 12A See Fig. 13 IC = 12A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 50 8.1 18 40 21 91 80 0.38 0.16 0.54 40 22 120 180 0.89 13 1100 73 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig. 8 27 VGE = 15V ---TJ = 25°C ---ns IC = 12A, VCC = 480V 140 VGE = 15V, RG = 23 Ω 130 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 0.9 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 12A, VCC = 480V ---VGE = 15V, RG = 23 Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt 200A/µs ---- A/µs TJ = 25°C See Fig. ---TJ = 125°C 17 2 www.irf.com IRG4PC30UD 20 16 Load Current ( A ) Du ty cy cle : 50 % T J = 12 5 ° C T sink = 90 ° C Gate d rive as spe cified Tu rn-on los ses in clu de effec ts of revers e reco ve ry Power D iss ipat ion = 24W 6 0% of ra te d vo l ta ge 12 8 4 0 0.1 1 10 A 100 f, Fre q uenc y (k Hz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , C olle cto r-to -E m itte r C u rre n t (A ) TJ = 2 5 ° C TJ = 1 5 0 °C 10 I C , C o lle cto r-to -E m itte r C u rre n t (A ) TJ = 1 5 0 °C 10 TJ = 2 5 ° C 1 1 0.1 0.1 1 VG E = 1 5 V 2 0 µ s P U L S E W ID T H A 10 0.1 5 6 7 8 V CC = 10V 5 µ s P U L S E W ID T H 9 10 11 A 12 V C E , C o lle cto r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC30UD M a xim u m D C C o lle c to r C u rre n t (A 25 V C E , C ollector-to-Em itter Volta ge (V) V GE = 15V 3.0 VGE = 15V 8 0 µ s P U L S E W ID T H IC = 2 4 A 20 2.5 15 IC = 1 2 A 2.0 10 5 I C = 6 .0 A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 A 150 1 .5 TC , C a s e Te m p e ra tu re ( ° C ) T J , Ju n c tio n T e m p e ra tu re ( ° C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Therm al Response (Z thJ C ) 1 D = 0.5 0 0.20 0.10 PD M 0 .1 0 .05 0 .0 2 0 .0 1 S IN G L E PU LS E (T H E R M AL RE S PO N SE ) t 1 t2 N o te s : 1 . D u ty f ac t or D = t 1 /t 2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30UD 2000 V G E , G a te -to -E m itte r V o lta g e (V ) A C, C apa cita nc e (pF ) 1600 V GE = C ie s = C re s = C oes = 0V , f = 1MHz C g e + C g c , C ce S H O R TE D C gc C ce + C g c 20 VCE = 400V IC = 12A 16 C ie s 1200 12 800 C oes 8 400 C re s 4 0 1 10 0 0 10 20 30 40 A 50 100 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , T o ta l G a te C h a r g e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.60 10 Total Switchig Losses (mJ) 0.58 Total Switchig Losses (mJ) V C C = 4 80V V G E = 15V T J = 25 ° C I C = 12A R G = 23Ω V G E = 1 5V V C C = 480V I C = 24A 0.56 1 I C = 12A 0.54 I C = 6.0A 0.52 0.50 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , Gate Resistance ( Ω) TJ , Junction Temperature ( ° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC30UD 2.0 Total Switchig Losses (mJ) 1.6 I C , C ollector-to-E m itter C urrent (A ) RG TJ V CC V GE = 23 Ω = 1 50 ° C = 480V = 15V 1000 VG E E 2 0V G= T J = 12 5 ° C 100 1.2 S A FE O P E R A TIN G A R E A 10 0.8 1 0.4 0.0 0 10 20 30 A 0 .1 1 10 100 1000 I C , Collector-to-Emitter Current (A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instan tan eou s Fo rwa rd C urre nt - I F (A ) TJ = 15 0 ° C 10 TJ = 12 5 ° C TJ = 2 5 ° C 1 0.4 0.8 1.2 1.6 2.0 2.4 F o rwa rd V olta g e D rop - V FM ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC30UD 160 100 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 120 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C I F = 24 A I F = 1 2A 80 I IR R M - (A ) I F = 2 4A 10 t rr - (ns) I F = 1 2A I F = 6 .0A I F = 6 .0 A 40 0 100 d i f /d t - ( A / µ s ) 1000 1 100 1000 di f /dt - ( A / µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 600 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 400 d i(re c )M /d t - (A /µ s) 1000 Q R R - (n C ) IF = 6.0 A I F = 2 4A I F = 1 2A I F = 12 A 100 200 I F = 6.0 A I F = 2 4A 0 100 d i f /d t - ( A / µ s ) 1000 10 100 1000 d i f /d t - ( A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC30UD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430µF D .U .T. 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d id d t t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC30UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PC30UD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 2 3Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-247AC 3 .6 5 ( .1 4 3 ) 3 .5 5 ( .1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N OTES: 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S ( IN C H E S ) . 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . 2X 5 .5 0 (.2 1 7 ) 4 .5 0 (.1 7 7 ) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE C OLLE C TO R E M IT T E R C OLLE C TO R * 1 4 .80 ( .58 3) 1 4 .20 ( .55 9) 4.3 0 (.1 70) 3.7 0 (.1 45) 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 (.1 0 2 ) 2 .2 0 (.0 8 7 ) * 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.21 5) L O N G E R L E A D E D (2 0 m m ) V E R S IO N A V A IL A B L E ( T O -2 4 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M C AS 2X 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC ( TO-3P ) D im e n s io n s in M illim ete rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com