IRG4PC30UDPBF

PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free UltraFast CoPack IGBT C VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 23 12 92 92 12 92 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.24 ----6 (0.21) Max. 1.2 2.5 -----40 ------ Units °C/W g (oz) www.irf.com 1 6/1/04 IRG4PC30UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltageƒ 600 ∆V (BR)CES/∆ TJ Temperature Coeff. of Breakdown Voltage ---V CE(on) Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance „ 3.1 Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.63 ---- V/°C 1.95 2.1 2.52 ---V 2.09 ------- 6.0 -11 ---- mV/°C 8.6 ---S ---- 250 µA ---- 2500 1.4 1.7 V 1.3 1.6 ---- ±100 n A Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 12A VGE = 15V IC = 23A See Fig. 2, 5 IC = 12A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 12A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 12A See Fig. 13 IC = 12A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Qrr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 50 8.1 18 40 21 91 80 0.38 0.16 0.54 40 22 120 180 0.89 13 1100 73 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig. 8 27 VGE = 15V ---TJ = 25°C ---ns IC = 12A, VCC = 480V 140 VGE = 15V, RG = 23 Ω 130 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 0.9 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 12A, VCC = 480V ---VGE = 15V, RG = 23 Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt 200A/µs ---- A/µs TJ = 25°C See Fig. ---TJ = 125°C 17 2 www.irf.com IRG4PC30UDPbF 20 16 Load Current ( A ) Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 24W 60% of rated voltage 12 8 4 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 IC , Collector-to-Emitter Current (A) TJ = 25°C TJ = 150°C 10 IC , Collector-to-Emitter Current (A) TJ = 150°C 10 TJ = 25°C 1 1 0.1 0.1 1 VGE = 15V 20µs PULSE WIDTH A 10 0.1 5 6 7 8 V CC = 10V 5µs PULSE WIDTH A 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC30UDPbF Maximum DC Collector Current (A 25 VCE , Collector-to-Emitter Voltage (V) V GE = 15V 3.0 V GE = 15V 80µs PULSE WIDTH IC = 24A 20 2.5 15 IC = 12A 2.0 10 5 I C = 6.0A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 A 150 1.5 TC , Case Temperature (°C) TJ , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t2 Notes: 1. Duty factor D = t / t 12 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30UDPbF 2000 C, Capacitance (pF) 1600 VGE , Gate-to-Emitter Voltage (V) A V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 12A 16 Cies 1200 12 800 Coes Cres 8 400 4 0 1 10 0 0 10 20 30 40 A 50 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.60 Total Switchig Losses (mJ) 0.58 Total Switchig Losses (mJ) V CC = 480V V GE = 15V T J = 25°C I C = 12A 10 R G = 23Ω V GE = 15V V CC = 480V I C = 24A 0.56 1 I C = 12A I C = 6.0A 0.54 0.52 0.50 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G, Gate Resistance ( Ω) TJ , Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC30UDPbF 2.0 1.6 I C , Collector-to-Emitter Current (A) Total Switchig Losses (mJ) R G = 23 Ω T J = 150°C V CC = 480V V GE = 15V 1000 VGE = 20V GE TJ = 125°C 100 1.2 SAFE OPERATING AREA 10 0.8 1 0.4 0.0 0 10 20 A 30 0.1 1 10 100 1000 IC , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC30UDPbF 160 100 VR = 200V TJ = 125°C TJ = 25°C 120 VR = 200V TJ = 125°C TJ = 25°C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/µs) 1000 1 100 di f /dt - (A/µs) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 600 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 400 di(rec)M/dt - (A/µs) 1000 Q RR - (nC) IF = 6.0A I F = 24A 200 I F = 12A I F = 12A 100 IF = 6.0A IF = 24A 0 100 di f /dt - (A/µs) 1000 10 100 di f /dt - (A/µs) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC30UDPbF 90% Vge +Vge Same type device as D.U.T. Vce Ic 10% Vce 90% Ic Ic 5% Ic 80% of Vce 430µF D.U.T. td(off) tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = ∫ trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 ∫ t4 Erec = Vd id dt t3 t1 ∫ t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC30UDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. 18 ' L 1000V 50V 6000µF 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Figure 20. www.irf.com 9 IRG4PC30UDPbF Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VG E=20V, L=10µH, RG = 23Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/04 10 www.irf.com