IRG4PC40KD

PD -91584A IRG4PC40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-ch an nel Benefits • Generation 4 IGBTs offer highest efficiencies available • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 42 25 84 84 15 84 10 ± 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 0.77 1.7 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 4/15/2000 IRG4PC40KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 600 — — V Temperature Coeff. of Breakdown Voltage — 0.46 — V/°C Collector-to-Emitter Saturation Voltage — 2.10 2.6 — 2.70 — V — 2.14 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -13 — mV/°C Forward Transconductance T 7.0 14 — S Zero Gate Voltage Collector Current — — 250 µA — — 3500 Diode Forward Voltage Drop — 1.3 1.7 V — 1.2 1.6 Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 25A VGE = 15V See Fig. 2, 5 IC = 42A IC = 25A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 25A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 15A See Fig. 13 IC = 15A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 120 180 IC = 25A 16 24 nC VCC = 400V See Fig.8 51 77 VGE = 15V 53 — 33 — TJ = 25°C ns 110 160 IC = 25A, VCC = 480V 100 150 VGE = 15V, RG = 10Ω 0.95 — Energy losses include "tail" 0.76 — mJ See Fig. 9,10,14 1.71 2.3 — — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V 52 — TJ = 150°C, 37 — IC = 25A, VCC = 480V ns 220 — VGE = 15V, RG = 10Ω 140 — Energy losses include "tail" 2.67 — mJ See Fig. 11,14 13 — nH Measured 5mm from package 1600 — VGE = 0V 130 — pF VCC = 30V See Fig. 7 55 — ƒ = 1.0MHz 42 60 ns TJ = 25°C See Fig. 74 120 TJ = 125°C 14 IF = 15A 4.0 6.0 A TJ = 25°C See Fig. 6.5 10 TJ = 125°C 15 VR = 200V 80 180 nC TJ = 25°C See Fig. 220 600 TJ = 125°C 16 di/dt = 200Aµs 188 — A/µs TJ = 25°C See Fig. 160 — TJ = 125°C 17 2 www.irf.com IRG4PC40KD 30 For both: 25 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125 ° C T s ink = 90 ° C G ate drive as specified P ow e r Dis sip ation = 35 W S q u a re w a v e : 20 15 6 0% of rate d volta ge I 10 5 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) T J = 150 ° C TJ = 25 ° C 10 TJ = 150 o C 10 TJ = 25 oC 1 0.1 V GE = 15V 20µs PULSE WIDTH 1 10 1 5 7 V C C = 50V 5µs PULSE WIDTH 9 11 A VCE , Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Volta g e (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC40KD 50 5.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 50 A Maximum DC Collector Current(A) 40 4.0 30 3.0 20 IC = 25 A 2.0 10 IC =12.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 P DM t1 t2 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40KD 3000 2500 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 25A 16 C, Capacitance (pF) 2000 Cies 1500 12 8 1000 500 4 Coes Cres 0 1 10 0 0 20 40 60 80 100 120 140 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.00 Total Switching Losses (mJ) 2.50 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C I C = 25A 100 RG = 10Ω Ohm VGE = 15V VCC = 480V 10 IC = 50 A IC = 25 A IC = 12.5 A 2.00 1 1.50 0 R Gate Resistance Ω ) RGG, Gate Resistance ((Ohm) 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PC40KD 8.0 6.0 4.0 I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE = Ohm 10Ω = 150 °C = 480V = 15V 1000 VGE = 20V T J = 125 °o 125 C 100 10 2.0 SAFE OPERATING AREA 0.0 0 10 20 30 40 50 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10 TJ = 1 5 0 ° C TJ = 1 2 5 ° C TJ = 2 5 ° C 1 0.8 1.2 1.6 2.0 2.4 F o rw a rd V o lta g e D ro p - V FM ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC40KD 100 100 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C 80 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C I F = 30 A I F = 3 0A 60 I IR R M - (A ) t rr - (ns) 10 I F = 1 5A I F = 1 5A 40 I F = 5 .0 A I F = 5 .0 A 20 100 d i f /d t - ( A / µ s ) 1000 1 100 1000 di f /dt - ( A / µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 800 1000 VR = 2 0 0 V TJ = 1 2 5 ° C TJ = 2 5 °C 600 VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 ° C I F = 3 0A d i(re c)M /d t - (A /µs) Q R R - (nC ) 400 I F = 5 .0A I F = 1 5A I F = 30 A I F = 15 A I F = 5 .0A 200 0 100 d i f /d t - ( A / µ s ) 1000 100 100 1000 di f /dt - ( A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PC40KD Same ty pe device as D .U.T. 90% Vge +Vge V ce 80% of Vce 430µF D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E o ff = ∫ t1 + 5 µ S V c e Ic Vceic d tdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC40KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PC40KD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 ) -A5 .5 0 (.2 17 ) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- M DBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.5 0 ( .0 5 9) 4 NOTE S: 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5.5 0 (.2 1 7) 4.5 0 (.1 7 7) -C- LEAD 1234- A S S IG N M E N T S GAT E COLLECTO R E M IT T E R COLLECTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 3X C AS 2 .4 0 (.0 9 4 ) 2 .0 0 (.0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D ) T O O R D E R A D D "-E " S U F F IX TO PAR T NUM BER 3X 1 .4 0 ( .0 56 ) 1 .0 0 ( .0 39 ) 0.2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC ( T O -3P ) D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com